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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IXKH47N60C MOSFET N-CH 600V 47A TO247AD IXYS	30	RFQ	Datasheet	CoolMOS™	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	600 V	47A (Tc)	10V	70mOhm @ 30A, 10V	4V @ 2mA	650 nC @ 10 V	±20V	-	-	-	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247AD
IMLT65R020M2HXTMA1 SILICON CARBIDE MOSFET Infineon Technologies	39	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXTT110N10L2 MOSFET N-CH 100V 110A TO268 IXYS	46	RFQ	Datasheet	Linear L2™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	110A (Tc)	10V	18mOhm @ 55A, 10V	4.5V @ 250µA	260 nC @ 10 V	±20V	10500 pF @ 25 V	-	600W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	TO-268AA
APT37M100L MOSFET N-CH 1000V 37A TO264 Microchip Technology	25	RFQ	Datasheet	-	TO-264-3, TO-264AA	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1000 V	37A (Tc)	10V	330mOhm @ 18A, 10V	5V @ 2.5mA	305 nC @ 10 V	±30V	9835 pF @ 25 V	-	1135W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-264
TW045Z120C,S1F G3 1200V SIC-MOSFET TO-247-4L 4 Toshiba Semiconductor and Storage	50	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	18V	62mOhm @ 20A, 18V	5V @ 6.7mA	57 nC @ 18 V	+25V, -10V	1969 pF @ 800 V	-	182W (Tc)	175°C	-	-	Through Hole	TO-247-4L(X)
AIMW120R045M1XKSA1 SICFET N-CH 1200V 52A TO247-3 Infineon Technologies	35	RFQ	Datasheet	CoolSiC™	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	52A (Tc)	-	59mOhm @ 20A, 15V	5.7V @ 10mA	57 nC @ 15 V	+20V, -7V	2130 pF @ 800 V	-	228W (Tc)	-40°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	PG-TO247-3
TW045N120C,S1F G3 1200V SIC-MOSFET TO-247 45MO Toshiba Semiconductor and Storage	71	RFQ	Datasheet	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	40A (Tc)	18V	59mOhm @ 20A, 18V	5V @ 6.7mA	57 nC @ 18 V	+25V, -10V	1969 pF @ 800 V	-	182W (Tc)	175°C	-	-	Through Hole	TO-247
IPDQ60R007CM8XTMA1 IPDQ60R007CM8XTMA1 Infineon Technologies	15	RFQ	-	CoolMOS™	22-PowerBSOP Module	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	600 V	288A (Tc)	10V	7mOhm @ 100A, 10V	4.7V @ 3.24mA	370 nC @ 10 V	±20V	16385 pF @ 400 V	-	1.249kW (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-HDSOP-22
E3M0040120K SIC, MOSFET, 40M, 1200V, TO-247- Wolfspeed, Inc.	78	RFQ	Datasheet	E	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	57A (Tc)	15V	53mOhm @ 31.9A, 15V	3.6V @ 8.77mA	94 nC @ 15 V	+19V, -8V	2726 pF @ 1000 V	-	242W	-55°C ~ 175°C (TJ)	Automotive	AEC-Q101	Through Hole	TO-247-4L
IXFN200N10P MOSFET N-CH 100V 200A SOT-227B Littelfuse Inc.	94	RFQ	Datasheet	HiPerFET™, Polar	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	100 V	200A (Tc)	10V	7.5mOhm @ 500mA, 10V	5V @ 8mA	235 nC @ 10 V	±20V	7600 pF @ 25 V	-	680W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227B
IXTX20N150 MOSFET N-CH 1500V 20A PLUS247-3 IXYS	30	RFQ	Datasheet	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	1500 V	20A (Tc)	10V	1Ohm @ 10A, 10V	4.5V @ 1mA	215 nC @ 10 V	±30V	7800 pF @ 25 V	-	1250W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PLUS247™-3
MSC080SMA120J SICFET N-CH 1.2KV 35A SOT227 Microchip Technology	56	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	37A (Tc)	-	-	-	-	-	-	-	-	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227 (ISOTOP®)
GCMX040B120S1-E1 SIC 1200V 40M MOSFET SOT-227 SemiQ	100	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	57A (Tc)	20V	52mOhm @ 40A, 20V	4V @ 10mA	121 nC @ 20 V	+25V, -10V	3185 pF @ 1000 V	-	242W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227
APT5010JVRU2 MOSFET N-CH 500V 44A SOT227 Microchip Technology	20	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	500 V	44A (Tc)	10V	100mOhm @ 22A, 10V	4V @ 2.5mA	312 nC @ 10 V	±30V	7410 pF @ 25 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227
MSC015SMA070B4 TRANS SJT N-CH 700V 140A TO247-4 Microchip Technology	45	RFQ	Datasheet	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	700 V	140A (Tc)	20V	19mOhm @ 40A, 20V	2.4V @ 4mA	215 nC @ 20 V	+23V, -10V	4500 pF @ 700 V	-	455W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-247-4
IXFN90N85X MOSFET N-CH 850V 90A SOT227B Littelfuse Inc.	19	RFQ	Datasheet	HiPerFET™, Ultra X	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	850 V	90A (Tc)	10V	41mOhm @ 500mA, 10V	5.5V @ 8mA	340 nC @ 10 V	±30V	13300 pF @ 25 V	-	1200W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227B
IXTH1N450HV MOSFET N-CH 4500V 1A TO247HV Littelfuse Inc.	66	RFQ	Datasheet	-	TO-247-3 Variant	Tube	Active	N-Channel	MOSFET (Metal Oxide)	4500 V	1A (Tc)	10V	80Ohm @ 50mA, 10V	6V @ 250µA	46 nC @ 10 V	±20V	1700 pF @ 25 V	-	520W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-247HV
APT8030JVFR MOSFET N-CH 800V 25A ISOTOP Microchip Technology	21	RFQ	Datasheet	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	800 V	25A (Tc)	-	300mOhm @ 500mA, 10V	4V @ 2.5mA	510 nC @ 10 V	-	7900 pF @ 25 V	-	-	-	-	-	Chassis Mount	ISOTOP®
APT40M70JVR MOSFET N-CH 400V 53A SOT227 Microchip Technology	40	RFQ	-	POWER MOS V®	SOT-227-4, miniBLOC	Tube	Active	N-Channel	MOSFET (Metal Oxide)	400 V	53A (Tc)	10V	70mOhm @ 26.5A, 10V	4V @ 2.5mA	495 nC @ 10 V	±30V	8890 pF @ 25 V	-	450W (Tc)	-55°C ~ 150°C (TJ)	-	-	Chassis Mount	SOT-227 (ISOTOP®)
GCMX020B120S1-E1 SIC 1200V 20M MOSFET SOT-227 SemiQ	30	RFQ	Datasheet	-	SOT-227-4, miniBLOC	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	1200 V	113A (Tc)	20V	28mOhm @ 50A, 20V	4V @ 20mA	216 nC @ 20 V	+25V, -10V	5349 pF @ 1000 V	-	395W (Tc)	-55°C ~ 175°C (TJ)	-	-	Chassis Mount	SOT-227

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