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Toshiba Semiconductor and Storage TW045N120C,S1F
- Part No.:
- TW045N120C,S1F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
TW045N120C,S1F.pdf
- Description:
- G3 1200V SIC-MOSFET TO-247 45MO
- Quantity:
- Payment:
- Shipping:
Inventory:71
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Product details
Overview
TW045N120C,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon carbide (SiC) N-channel power MOSFET designed for high-voltage switching in industrial and renewable energy systems. It delivers 1200 V drain-source breakdown voltage, 45 mΩ typical RDS(ON), integrated SiC Schottky body diode with −1.35 V forward voltage, and operates up to 175 °C channel temperature - enabling efficient operation in 3-phase inverters and HV DC-DC converters.
For engineers reviewing the TW045N120C,S1F datasheet, TW045N120C,S1F pinout, TW045N120C,S1F application, or TW045N120C,S1F equivalent, key selection criteria include its 1200 V rating, low 45 mΩ on-resistance at 18 V gate drive, built-in SiC diode performance, thermal robustness to 175 °C, and TO-247 package compatibility with high-power heatsink mounting.
Technical Context
This third-generation SiC MOSFET integrates a monolithic SiC Schottky barrier diode to eliminate reverse recovery losses and enable hard-switched topologies. Its enhancement-mode operation, 3.0–5.0 V threshold voltage range, and recommended ±0 V / +18 V gate drive ensure stable turn-on/turn-off control under high dv/dt conditions.
The device features low output charge (Qoss = 147 nC), fast switching (ton = 71 ns, toff = 82 ns), and low effective output capacitance (Co(er) = 122 pF), supporting high-frequency operation up to 100 kHz in resonant and phase-shifted full-bridge designs without excessive gate drive loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 1200 V - supports 1000 V DC bus systems with 20% safety margin for overvoltage transients |
| RDS(ON) | 45 mΩ (typ.) at VGS = 18 V, Tch = 25 °C - enables <1.8 W conduction loss at 20 A continuous current |
| VDSF | −1.35 V (typ.) - reduces body-diode conduction loss and eliminates reverse recovery in synchronous rectification |
| ID (DC) | 40 A at Tc = 25 °C - supports high-current motor drives and solar string inverters with forced-air cooling |
| Rth(ch-c) | 0.824 °C/W - allows direct heatsink mounting to sustain 182 W power dissipation at 25 °C case temperature |
| Vth | 3.0–5.0 V - provides noise immunity against gate-induced false turn-on in high-noise EMI environments |
| Qg | 57 nC (typ.) - determines gate driver peak current requirement (~12 A for 4.7 Ω gate resistor, 18 V drive) |
Pinout & Package
Package: TO-247 (TOSHIBA 2-16L1A), thermally optimized with drain-connected tab for direct heatsink mounting. Weight: 6.15 g (typ.).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1: Gate | Control terminal for MOSFET channel | Receives +18 V / 0 V drive signal; requires low-inductance layout due to fast switching edge rates |
| 2: Drain (heatsink) | Main high-voltage power terminal | Electrically and thermally connected to metal tab; must be isolated from heatsink unless system ground referenced |
| 3: Source | Reference node for gate drive and current return path | Serves as local ground reference for gate driver; critical for minimizing common-source inductance in high-di/dt operation |
Key Features
| Feature | Design Value |
|---|---|
| Integrated SiC Schottky body diode | Eliminates reverse recovery charge (Qrr = 297 nC) and associated switching losses in freewheeling paths |
| Third-generation SiC chip design | Optimized cell layout and trench gate structure reduce RDS(ON) × Qg figure-of-merit by >25% vs. prior gen |
| High channel temperature rating | 175 °C maximum Tch enables compact thermal design in space-constrained industrial enclosures |
| Low Ciss/Crss ratio | 1969 pF / 3.2 pF = ~615 - improves Miller immunity and enables stable operation with moderate gate resistance |
| Enhancement-mode operation | Ensures fail-safe off-state during gate driver fault or power-up sequencing without external pull-down resistors |
Applications
| Industrial Motor Drives | Solar String Inverters |
|---|---|
Use Scenario: Three-phase 650–1000 V DC bus inverters driving 15–75 kW AC induction or PMSM motors in HVAC, pumps, and compressors. IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT-replacement half-bridge modules operating at 8–16 kHz PWM frequency. Use Value: 45 mΩ RDS(ON) and 1200 V rating reduce conduction loss by 35% and eliminate snubber circuits versus 650 V Si IGBTs. |
Use Scenario: MPPT-enabled DC-DC boost stages in commercial rooftop solar arrays with 800–1000 V input strings. IC Role / Device Role / Timing Role: Primary switch in non-isolated interleaved boost converters running at 50–100 kHz switching frequency. Use Value: Integrated SiC diode enables zero-voltage switching (ZVS) capability and cuts diode conduction loss by 60% vs. discrete Si FRD solutions. |
| EV On-Board Chargers | Energy Storage Systems |
Use Scenario: Bidirectional AC-DC PFC and DC-DC stages in 11–22 kW OBCs interfacing 400 V or 800 V battery architectures. IC Role / Device Role / Timing Role: Active clamp flyback or dual-active-bridge switch handling 20 A RMS current with 100 kHz+ switching. Use Value: −1.35 V VDSF and 54 ns trr minimize body-diode losses during soft-switching transitions, improving efficiency by 1.2% at full load. |
Use Scenario: High-efficiency bidirectional DC-DC converters in 1500 V battery energy storage systems (BESS) for grid-tied applications. IC Role / Device Role / Timing Role: Main power switch in modular multilevel converter (MMC) submodules requiring 1200 V blocking and 40 A current capability. Use Value: 0.824 °C/W Rth(ch-c) and 175 °C Tch rating allow derated operation at 95% load without active liquid cooling in outdoor cabinets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW45N120K5 | 1200 V, 45 mΩ, TO-247-4L package with Kelvin source; lower Qg (45 nC) but no integrated diode | Requires external SiC diode; better suited for layouts where gate drive stability is prioritized over component count | Select when precise gate control and reduced Miller feedback are critical, and board space permits discrete diode placement |
| IXTH45N120S | 1200 V, 45 mΩ, TO-247 package; higher Vth (4.5–6.5 V), no integrated diode, higher Rth(ch-c) (1.0 °C/W) | Limited to lower switching frequencies (<50 kHz); less suitable for ZVS or high-di/dt freewheeling | Prefer for cost-sensitive industrial SMPS where thermal margin exists and diode recovery is managed externally |
Compared with STW45N120K5 and IXTH45N120S, TW045N120C,S1F offers integrated body diode functionality and superior thermal resistance, making it optimal for compact, high-frequency, diode-dependent topologies like boost PFC and LLC resonant converters - whereas alternatives require additional components or accept higher thermal overhead.
Availability
TW045N120C,S1F is available at Aetrix Electronics and suitable for industrial motor drives, solar string inverters, EV on-board chargers, and energy storage systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for TW045N120C,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with over 50 years of power electronics innovation.
The TW045N120C,S1F belongs to Toshiba's third-generation SiC MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 1200 V industrial and renewable energy infrastructure.
FAQ
What is the maximum continuous drain current rating for TW045N120C,S1F at 100 °C case temperature?
The TW045N120C,S1F supports 30 A DC drain current at Tc = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits under sustained conduction; actual usable current depends on heatsink performance, ambient temperature, and switching frequency. For TW045N120C,S1F, maintaining Tch ≤ 175 °C requires careful thermal design - especially above 20 A at high duty cycles.
Does TW045N120C,S1F have a built-in body diode, and what is its forward voltage?
Yes, TW045N120C,S1F integrates a monolithic SiC Schottky barrier diode as part of its third-generation chip design. Its typical diode forward voltage (VDSF) is −1.35 V at Tc = 25 °C and −1.70 V at Tc = 100 °C, measured with VGS = 18 V. This low-voltage, zero-recovery diode enables efficient synchronous rectification and eliminates reverse recovery losses in hard-switched topologies using TW045N120C,S1F.
What gate drive voltage is recommended for reliable operation of TW045N120C,S1F?
Toshiba specifies +18 V for turn-on and 0 V for turn-off as the recommended gate-source drive voltage for TW045N120C,S1F. This ensures full enhancement while maintaining safe margin below the ±25 V absolute maximum VGS. Operating below +15 V risks incomplete turn-on and elevated RDS(ON); exceeding +20 V increases gate oxide stress. The 3.0–5.0 V threshold voltage range of TW045N120C,S1F also provides noise immunity in noisy industrial environments.
Is TW045N120C,S1F RoHS compliant, and how is compliance indicated on the device marking?
Yes, TW045N120C,S1F is RoHS compliant. Per Toshiba documentation, RoHS-compliant units are marked with an underlined lot number and carry the [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] designation. Non-RoHS versions display an unmarked (non-underlined) lot number and [[Pb]]/INCLUDES > MCV. Customers should verify marking per unit and consult Toshiba sales for environmental certification documentation specific to TW045N120C,S1F shipment batches.
What is the safe operating area (SOA) limitation for TW045N120C,S1F in linear mode operation?
TW045N120C,S1F is rated for switching applications only and is not characterized for linear (ohmic) mode operation. Its Safe Operating Area curve (Fig. 8.16) shows only single-pulse, limited-duty-cycle boundaries - confirming that sustained linear operation risks thermal runaway due to positive temperature coefficient of RDS(ON). For analog control or active regulation, TW045N120C,S1F must remain fully saturated or fully off; linear use is prohibited per Toshiba's application guidance.
TW045N120C,S1F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 59mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id:
- 5V @ 6.7mA
- Gate Charge (Qg) (Max) @ Vgs:
- 57 nC @ 18 V
- Vgs (Max):
- +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1969 pF @ 800 V
- FET Feature:
- -
- Power Dissipation (Max):
- 182W (Tc)
- Operating Temperature:
- 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
TW045N120C,S1F FAQ
1.How can I place an order for TW045N120C,S1F through Aetrix?
Please submit a Request for Quotation (RFQ) for TW045N120C,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TW045N120C,S1F reliable?
The price and inventory of TW045N120C,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TW045N120C,S1F is usually 5 days.
3.What payment methods are accepted for TW045N120C,S1F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TW045N120C,S1F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TW045N120C,S1F?
TW045N120C,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TW045N120C,S1F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TW045N120C,S1F?
For technical support, including TW045N120C,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TW045N120C,S1F requirements.
6.How does Aetrix verify that TW045N120C,S1F is sourced from the original manufacturer or authorized distributors?
All TW045N120C,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TW045N120C,S1F meets industry standards.
7.What is the process for return or replacement of TW045N120C,S1F?
All TW045N120C,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TW045N120C,S1F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TW045N120C,S1F part is unused and in its original packaging.
Return procedure for TW045N120C,S1F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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