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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMLT65R020M2HXTMA1

Name: IMLT65R020M2HXTMA1
Brand: Infineon Technologies
SKU: IMLT65R020M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMLT65R020M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IMLT65R020M2HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:39

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Product details

Overview

IMLT65R020M2HXTMA1 from Infineon is a 650 V, 20 mΩ SiC MOSFET in PG-HDSOP-16 package with integrated body diode, designed for high-frequency hard-switching power stages in industrial and EV charging systems. It delivers 293 A peak drain current, 4.5 V gate threshold voltage, and ultra-low 123 µJ total switching losses at 400 V/46.9 A.

For engineers reviewing the IMLT65R020M2HXTMA1 datasheet, IMLT65R020M2HXTMA1 pinout, IMLT65R020M2HXTMA1 application, or IMLT65R020M2HXTMA1 equivalent, key selection criteria include its 0.33 °C/W junction-to-case thermal resistance, robust 200 V/ns dv/dt immunity, dual-source pin separation (Power Source Pins 1–6, Driver Source Pin 7), and validated JEDEC qualification for industrial use.

Technical Context

This CoolSiC™ G2 MOSFET employs Infineon's second-generation silicon carbide trench technology with .XT interconnection, enabling stable operation up to 175 °C junction temperature and reliable zero-volt turn-off without parasitic turn-on. Its 4.5 V V_GS(th) and low Q_G (57 nC) support bipolar gate driving and simplify gate driver design.

The device features separate power and driver source terminals to minimize source inductance impact on switching dynamics, and its body diode exhibits 18 ns forward recovery time and 110–184 nC recovery charge-critical for bidirectional topologies like totem-pole PFC and three-phase inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with 1.6× safety margin for transient overvoltage
R_DS(on), typ	20 mΩ at V_GS = 18 V, T_j = 25 °C - enables <1.5 W conduction loss at 100 A
I_D,pulse	293 A - sustains short-circuit conditions in motor drives and UPS during fault clearing
E_on + E_off	123 µJ at V_DD = 400 V, I_D = 46.9 A - reduces switching loss by >50% vs. comparable Si MOSFETs
R_th(j–c)	0.33 °C/W - allows 454 W power dissipation at 25 °C case temperature, enabling compact heatsink design
dv/dt immunity	200 V/ns - prevents false triggering in high-di/dt environments like fast-switching inverters
Q_G	57 nC - compatible with standard 1.8 Ω gate drivers without requiring active Miller clamping

Pinout & Package

Package: PG-HDSOP-16 (Power-Grip HDSOP-16), surface-mount with exposed metal tab for thermal and electrical connection. Tab is electrically connected to Drain (Pins 9–16).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 9–16, Tab)	Main current return path	Low-inductance parallel drain connection; tab serves as primary thermal interface and high-current sink
Gate (Pin 8)	Control input	Isolated gate terminal with 2.5 Ω internal resistance; requires dedicated gate loop routing
Power Source (Pins 1–6)	High-current source reference	Connects to main power ground plane; carries load current but not gate loop current
Driver Source (Pin 7)	Gate driver reference	Separate low-inductance return for gate driver to suppress common-source inductance effects
Internal Body Diode	Integrated reverse conduction path	Enables unidirectional freewheeling in half-bridge configurations without external diode

Key Features

Feature	Design Value
Separate Power/Driver Source pins	Eliminates gate loop inductance coupling, enabling clean 18 V turn-on and 0 V turn-off without Miller-induced shoot-through
Robust body diode with hard commutation capability	Validated for repetitive avalanche energy of 1.36 mJ and 18 ns forward recovery time-supports totem-pole PFC and bidirectional converters
.XT interconnection technology	Reduces thermal resistance by 25% vs. prior generation, improving power density and long-term reliability under thermal cycling
Benchmark V_GS(th) = 4.5 V	Provides clear noise margin against spurious turn-on while remaining compatible with 15 V gate drivers and bipolar schemes
JEDEC-qualified for industrial applications	Guarantees lifetime performance at 175 °C junction temperature per JESD47, eliminating need for derating in harsh environments

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-level NPC or T-type inverter stage converting 1000 V DC input to grid-synchronized AC output.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 100 kHz hard-switched leg, handling 50–100 kW per module.

Use Value: 20 mΩ R_DS(on) and 123 µJ switching loss enable >99% conversion efficiency at full load while maintaining <100 °C junction rise.

Use Scenario: Secondary-side LLC resonant converter in 150–350 kW liquid-cooled EV charger, operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch in asymmetrical half-bridge configuration.

Use Value: Dual-source pin architecture minimizes gate oscillation during zero-voltage switching transitions, reducing EMI and gate driver stress.

Industrial UPS Systems

Energy Storage Bidirectional Converters

Use Scenario: Online double-conversion UPS with 400 V DC link, delivering uninterrupted 3-phase 400 V AC output during grid failure.

IC Role / Device Role / Timing Role: Inverter-stage switch in 16 kHz PWM-controlled IGBT replacement topology.

Use Value: 293 A peak current rating and 272 mJ single-pulse avalanche energy ensure safe operation during 10 ms overload transients without desaturation protection.

Use Scenario: 1 MW battery energy storage system using dual-active-bridge (DAB) topology for grid-to-battery and battery-to-grid transfer.

IC Role / Device Role / Timing Role: Primary-side switch in DAB phase-shifted full-bridge, operating at 100–200 kHz with soft switching.

Use Value: Low C_oss (197 pF) and 108 nC Q_oss reduce circulating current losses and improve ZVS range across 20–100% load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0021120K	650 V, 21 mΩ, TO-247-4L package; higher R_DS(on) and no separate driver source pin	Lacks dedicated driver source terminal - requires careful PCB layout to mitigate common-source inductance	Select when legacy TO-247 footprint compatibility is required and gate drive loop inductance can be tightly controlled
ROHM SCT3022KL	650 V, 22 mΩ, TO-263-7L package; 4.2 V V_GS(th), higher Q_G (62 nC)	Higher gate charge increases driver power demand and slows switching edge control precision	Prefer for cost-sensitive designs where 5% R_DS(on) penalty and 9% Q_G increase are acceptable trade-offs

Compared with C3M0021120K and SCT3022KL, IMLT65R020M2HXTMA1 offers superior thermal performance (0.33 °C/W vs. ≥0.45 °C/W), lower switching loss (123 µJ vs. ≥140 µJ), and built-in layout resilience via separated source terminals-making it optimal for high-density, high-reliability industrial power modules.

Availability

IMLT65R020M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply, long-lifecycle assurance, and JEDEC-qualified reliability.

Supply support for IMLT65R020M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to the CoolSiC™ MOSFET 650 V G2 product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies and grid-connected inverters operating above 100 kHz.

FAQ

What is the maximum continuous drain current rating for IMLT65R020M2HXTMA1?

The maximum continuous DC drain current is 107 A at T_c = 25 °C and 75 A at T_c = 100 °C, as specified in the absolute maximum ratings table. These values assume ideal heatsinking and are limited by package thermal resistance (0.33 °C/W) and silicon thermal limits (175 °C junction temperature). Derating is required above 25 °C case temperature per the linear derating curve in the datasheet.

Can the Power Source and Driver Source pins be shorted together on the PCB?

No - Infineon explicitly states that Power Source (Pins 1–6) and Driver Source (Pin 7) are not exchangeable and must remain isolated in layout. Shorting them eliminates the benefit of separate source paths, reintroducing common-source inductance into the gate loop and risking oscillation or false turn-on during high-di/dt switching events.

Does IMLT65R020M2HXTMA1 include an integrated body diode, and is it suitable for reverse conduction?

Yes - it integrates a robust silicon carbide body diode validated for hard commutation. Key metrics include 18 ns forward recovery time, 110–184 nC recovery charge, and 1.36 mJ repetitive avalanche energy. This makes it suitable for reverse conduction in totem-pole PFC, synchronous rectification, and bidirectional DC–DC converters without external diodes.

What gate driving voltage is recommended for reliable operation?

Infineon specifies a recommended turn-on voltage of 18 V and turn-off voltage of 0 V. The device's 4.5 V gate threshold ensures noise immunity, and its gate oxide is rated for ±23 V static and ±25 V transient voltage. Driving outside this range risks gate oxide degradation or unreliable switching behavior, especially under high-temperature or high-humidity conditions.

IMLT65R020M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IMLT65R020M2HXTMA1 FAQ

1.How can I place an order for IMLT65R020M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMLT65R020M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMLT65R020M2HXTMA1 reliable?

The price and inventory of IMLT65R020M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMLT65R020M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMLT65R020M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMLT65R020M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMLT65R020M2HXTMA1?

IMLT65R020M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMLT65R020M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMLT65R020M2HXTMA1?

For technical support, including IMLT65R020M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMLT65R020M2HXTMA1 requirements.

6.How does Aetrix verify that IMLT65R020M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMLT65R020M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMLT65R020M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMLT65R020M2HXTMA1?

All IMLT65R020M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMLT65R020M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMLT65R020M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMLT65R020M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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