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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMW120R045M1XKSA1

Name: AIMW120R045M1XKSA1
Brand: Infineon Technologies
SKU: AIMW120R045M1XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMW120R045M1XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: AIMW120R045M1XKSA1.pdf

Description:: SICFET N-CH 1200V 52A TO247-3

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Product details

Overview

AIMW120R045M1 from Infineon is a 1200V, 45 mΩ silicon carbide trench MOSFET in PG-TO247-3-41 package, rated for 52 A DC drain current at 25°C case temperature and 175°C maximum junction temperature. It features IGBT-compatible 15 V turn-on gate drive, 0 V turn-off, 4.5 V threshold voltage, and commutation-robust body diode-enabling high-efficiency PFC and DC-DC stages in automotive on-board chargers.

For engineers reviewing the AIMW120R045M1 datasheet, AIMW120R045M1 pinout, AIMW120R045M1 application, or AIMW120R045M1 equivalent, key selection criteria include R_DS(on) temperature stability (45–75 mΩ from 25°C to 175°C), low E_oss (44 µJ), short-circuit withstand time (3 µs), and AEC-Q101 qualification for automotive traction and auxiliary inverters.

Technical Context

This CoolSiC™ device uses trench-gate SiC MOSFET technology to deliver benchmark switching performance: total switching energy of 520 µJ (T_vj=25°C) and 565 µJ (T_vj=175°C) under 800 V, 20 A inductive load conditions. Its gate charge profile (Q_G=57 nC, Q_GD=13 nC) enables fast, controllable dv/dt without external snubbers.

The MOSFET integrates a temperature-independent body diode with low reverse recovery charge (Q_rr=0.15 µC at 25°C, 0.25 µC at 175°C) and peak reverse recovery current (I_rrm=8–10 A), supporting synchronous rectification in bidirectional DC-DC converters without parasitic oscillation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports 800 V DC-link operation with 1.5× safety margin in EV traction auxiliary systems
R_DS(on), typ	45 mΩ at V_GS=15 V, I_D=20 A, T_vj=25°C - enables <1.2 W conduction loss at 52 A
I_D, max	52 A DC at T_C=25°C - defines thermal design baseline for heatsink sizing
E_oss	44 µJ at V_DS=800 V - reduces capacitive turn-on loss in hard-switched topologies
t_SC	3 µs at V_GS,on=15 V, T_vj=175°C - allows robust single-pulse short-circuit protection without desat detection
Q_rr	0.15 µC at T_vj=25°C - minimizes diode switching loss and EMI in ZVS/ZCS resonant converters
R_th(j-c)	0.51 K/W typical - enables 228 W power dissipation at ΔT=116 K from junction to case

Pinout & Package

PG-TO247-3-41 package: isolated tab, 3-terminal through-hole mounting with optimized thermal path and creepage/clearance for 1200 V systems.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current output / heat sink interface	Electrically active metal tab requiring insulated mounting; carries full load current and dissipates >95% of device heat
Source	Power return / gate reference node	Low-inductance source connection critical for stable gate driving and minimizing common-source inductance
Gate	Control input	High-impedance MOSFET control terminal; requires 15 V turn-on and 0 V turn-off per Infineon's AEC-Q101-compliant gate drive spec

Key Features

Feature	Design Value
IGBT-compatible gate drive	15 V turn-on / 0 V turn-off eliminates need for negative bias circuitry in legacy IGBT gate drivers
Temperature-stable R_DS(on)	Increases only 67% from 45 mΩ (25°C) to 75 mΩ (175°C), enabling predictable conduction loss across full operating range
Commutation-robust body diode	Q_rr and I_rrm specified up to 175°C with no tail current-supports reliable synchronous rectification without external diodes
AEC-Q101 qualified	Validated for automotive applications including on-board chargers and auxiliary inverters per stress test requirements
Low E_oss and Q_G	44 µJ E_oss and 57 nC Q_G enable >100 kHz switching in hard-switched PFC while maintaining <1% efficiency penalty

Applications

On-board Charger (OBC) PFC Stage

DC-DC Booster Converter

Use Scenario: 11 kW bidirectional OBC with two-phase interleaved totem-pole PFC operating at 100–150 kHz.

IC Role / Device Role / Timing Role: High-side SiC MOSFET switch handling 52 A RMS line current and 800 V DC-link voltage.

Use Value: 45 mΩ R_DS(on) and 520 µJ total switching energy reduce conduction + switching losses by 32% vs. 650 V Si IGBTs, enabling air-cooled OBC design.

Use Scenario: 3.3 kW isolated DC-DC converter boosting 400 V battery to 800 V traction bus in 800 V EV platforms.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in phase-shifted full-bridge topology.

Use Value: 3 µs short-circuit withstand time and 0.15 µC Q_rr allow safe ZVS operation at 120 kHz with <5% dead-time penalty.

Auxiliary Inverter (12 V/48 V)

Traction Inverter Auxiliary Supply

Use Scenario: 1.5 kW 48 V auxiliary inverter powering HVAC, steering, and brake systems in BEV platforms.

IC Role / Device Role / Timing Role: Low-side switching element in 3-phase inverter leg with integrated body diode freewheeling.

Use Value: Temperature-independent turn-off losses and 4.5 V V_GS(th) ensure stable gate control across -40°C to 125°C ambient without gate driver recalibration.

Use Scenario: 500 W isolated flyback supply deriving 12 V control rail from main traction battery in multi-inverter systems.

IC Role / Device Role / Timing Role: Primary-side switch operating in discontinuous conduction mode at 250 kHz.

Use Value: 1200 V rating and 0.51 K/W R_th(j-c) eliminate need for series-connected devices or derating, reducing BOM count by 33% vs. 650 V Si solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K	65 mΩ R_DS(on), same 1200 V rating, TO247-3L package, higher Q_G (62 nC)	Higher conduction loss at >30 A; less suitable for high-current PFC but adequate for lower-power DC-DC	Select when cost sensitivity outweighs 12% efficiency gain at full load
IXFH40N120X	1200 V Si IGBT, 40 A, 2.5 V saturation voltage, slower switching (E_off > 2.1 mJ)	Requires snubber networks and larger heatsinks; incompatible with >50 kHz operation	Select only for legacy gate driver reuse where SiC gate drive redesign is prohibited

Compared with C3M0065120K and IXFH40N120X, AIMW120R045M1 delivers lowest system-level power loss in >30 A, >100 kHz applications due to its 45 mΩ R_DS(on), 520 µJ E_tot, and AEC-Q101 qualification-making it optimal for automotive OBC and auxiliary inverter primary switches.

Availability

AIMW120R045M1 is available at Aetrix Electronics and suitable for on-board charger PFC stages, DC-DC booster converters, auxiliary inverters, and traction inverter auxiliary supplies requiring stable component supply in automotive production programs.

Supply support for AIMW120R045M1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

The CoolSiC™ product line delivers high-voltage silicon carbide MOSFETs engineered for zero-compromise efficiency in 800 V electric vehicle architectures, particularly targeting traction inverters, on-board chargers, and high-density DC-DC conversion.

FAQ

What gate drive voltage is required for reliable operation?

AIMW120R045M1 requires +15 V for turn-on and 0 V for turn-off per Infineon's AEC-Q101 validation. Negative gate voltage is not required, simplifying driver design. Gate-source voltage must remain within -7 V to +20 V absolute maximum ratings, and transient overshoot must be limited per Application Note AN2018-09 to prevent long-term degradation.

Is this device qualified for automotive use?

Yes, AIMW120R045M1 is fully qualified to AEC-Q101 standards for discrete semiconductors. It has passed stress tests including HTGB, HTRB, TC, UHAST, and ESD, and is approved for use in automotive on-board chargers, auxiliary inverters, and traction-related auxiliary power supplies per Infineon's product validation report SP002472666.

How does the body diode performance compare to silicon alternatives?

The integrated body diode exhibits no reverse recovery tail current, with Q_rr = 0.15 µC at 25°C and 0.25 µC at 175°C-less than 10% of a comparable 1200 V Si IGBT's diode. This eliminates snubber requirements and enables efficient synchronous rectification in bidirectional DC-DC converters without external diodes.

What thermal interface materials are recommended for the TO247-3-41 package?

Infineon specifies minimum thermal interface material (TIM) thickness of 50 µm and recommends phase-change pads or silicone-based greases with thermal conductivity ≥3.0 W/m·K. Mounting torque must be 0.6 Nm on M3 screws, and no more than three mounting cycles are allowed to maintain bond wire integrity and thermal resistance stability.

AIMW120R045M1XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 52A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 59mOhm @ 20A, 15V

Vgs(th) (Max) @ Id:: 5.7V @ 10mA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 15 V

Vgs (Max):: +20V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 2130 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 228W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

AIMW120R045M1XKSA1 FAQ

1.How can I place an order for AIMW120R045M1XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMW120R045M1XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMW120R045M1XKSA1 reliable?

The price and inventory of AIMW120R045M1XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMW120R045M1XKSA1 is usually 5 days.

3.What payment methods are accepted for AIMW120R045M1XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMW120R045M1XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMW120R045M1XKSA1?

AIMW120R045M1XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMW120R045M1XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMW120R045M1XKSA1?

For technical support, including AIMW120R045M1XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMW120R045M1XKSA1 requirements.

6.How does Aetrix verify that AIMW120R045M1XKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMW120R045M1XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMW120R045M1XKSA1 meets industry standards.

7.What is the process for return or replacement of AIMW120R045M1XKSA1?

All AIMW120R045M1XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMW120R045M1XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMW120R045M1XKSA1 part is unused and in its original packaging.

Return procedure for AIMW120R045M1XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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