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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW26NM60N

Name: STW26NM60N
Brand: STMicroelectronics
SKU: STW26NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW26NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW26NM60N.pdf

Description:: N-channel 600 V, 0.135 Ohm typ.,

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW26NM60N from STMicroelectronics is an N-channel 600 V, 135 mΩ (typ), 20 A Power MOSFET using MDmesh™ II technology in TO-247 package. It delivers ultra-low gate charge (60 nC) and input capacitance (1800 pF), enabling high-efficiency hard-switched and resonant converters in industrial SMPS and PFC stages.

For engineers reviewing the STW26NM60N datasheet, STW26NM60N pinout, STW26NM60N application, or STW26NM60N equivalent, key selection criteria include avalanche ruggedness (610 mJ EAS), dv/dt immunity (15 V/ns), and thermal resistance (0.89 °C/W R_thJC) for high-power density designs.

Technical Context

This MOSFET employs ST's second-generation MDmesh vertical strip layout to minimize R_DS(on) and Q_g simultaneously-achieving 135 mΩ typ at V_GS = 10 V and 60 nC total gate charge. Its optimized Crss (6 pF) and Coss eq. (310 pF) support fast, low-loss switching in 100–500 kHz converters.

The integrated body diode features 370 ns trr and 5.8 µC Q_rr at 25 °C, with controlled recovery behavior validated under 100 A/µs di/dt and 60 V V_DD. Junction temperature range spans –55 to 150 °C, supporting operation in thermally constrained industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50% voltage margin for transient spikes
R_DS(on) max	165 mΩ - ensures ≤3.3 W conduction loss at 20 A continuous drain current
Q_g	60 nC - enables efficient gate drive with <1 W driver power at 200 kHz switching
E_AS	610 mJ - provides robust unclamped inductive switching capability without external snubbers
R_thJC	0.89 °C/W - allows 140 W dissipation with ≤125 °C case-to-junction rise at 25 °C heatsink
C_iss	1800 pF - reduces Miller-induced turn-on risk in high-side configurations
dv/dt rating	15 V/ns - suppresses false triggering during fast voltage transients in bridge legs

Pinout & Package

TO-247 package: isolated tab (Drain), 3-pin through-hole mounting with 5.3 mm creepage, RoHS-compliant ECOPACK®2.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal requiring <60 nC charge for full enhancement; 2.8 Ω intrinsic gate resistance limits ringing
2 (D, Tab)	Drain	Main high-voltage power terminal; electrically connected to metal tab for direct heatsink mounting and low-inductance thermal path
3 (S)	Source	Power return and reference node for gate drive; ties to PCB ground plane to minimize common-source inductance

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 610 mJ without derating, eliminating need for overvoltage clamping in flyback/PFC
Low C_iss/C_oss ratio	1800 pF / 115 pF = 15.7 - improves voltage-dependent switching efficiency and reduces capacitive losses above 200 V
Optimized Crss	6 pF - minimizes Miller feedback during dV/dt transitions, enabling stable operation with minimal gate resistor
MDmesh™ II structure	Vertical trench + strip layout - achieves 25% lower R_DS(on) × Q_g figure-of-merit vs. first-gen MDmesh devices

Applications

Industrial SMPS

Server PSU PFC

Use Scenario: 3.5 kW active clamp forward converter operating at 250 kHz with 400 V DC input.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 20 A peak current and 600 V blocking.

Use Value: 135 mΩ R_DS(on) and 60 nC Q_g reduce combined conduction/switching loss by 18% versus prior gen MOSFETs.

Use Scenario: Interleaved boost PFC stage in 2 kW telecom rectifier with 96% target efficiency.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 18 A RMS current and 600 V reverse recovery stress.

Use Value: 370 ns trr and 5.8 µC Q_rr limit diode recovery loss to <0.4 W per device at 100 kHz.

Solar Inverter DC-DC

EV Onboard Charger

Use Scenario: Isolated DC-DC stage in string inverter transferring 1.2 kW from 1000 V PV array to 400 V battery bus.

IC Role / Device Role / Timing Role: High-voltage bridge switch in phase-shifted full-bridge topology.

Use Value: 15 V/ns dv/dt rating prevents spurious turn-on during ZVS transitions across 600 V bus.

Use Scenario: 6.6 kW bidirectional OBC AC/DC stage with SiC-compatible gate drive timing.

IC Role / Device Role / Timing Role: Unidirectional boost switch in AC rectification path with 20 A continuous rating.

Use Value: 0.89 °C/W R_thJC enables 140 W dissipation on compact 40 mm × 40 mm heatsink without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	R_DS(on) = 190 mΩ, Q_g = 43 nC, 650 V rating, CoolMOS™ C7	Higher conduction loss but lower gate charge; better suited for >300 kHz ZVS topologies	Select when gate drive power budget is tighter than conduction loss budget
IXFH50N60P	R_DS(on) = 125 mΩ, Q_g = 120 nC, 600 V rating, HiPerFET™	Lower R_DS(on) but double Q_g; higher switching loss above 100 kHz	Prefer for 50–100 kHz hard-switched applications where thermal headroom exists

Compared with IPP60R190C7 and IXFH50N60P, STW26NM60N offers the best balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness-making it optimal for 100–250 kHz industrial SMPS where reliability under overload is critical.

Availability

STW26NM60N is available at Aetrix Electronics and suitable for industrial SMPS, server PSU PFC, solar inverter DC-DC, and EV onboard charger designs requiring stable component supply and long-term manufacturability.

Supply support for STW26NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in industrial power supplies and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW26NM60N supports 12.6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9926 Rev 3. This derating reflects junction-to-case thermal resistance (0.89 °C/W) and maximum allowable T_J of 150 °C, ensuring safe operation in convection-cooled enclosures.

Does this MOSFET include an integrated anti-parallel diode suitable for synchronous rectification?

No-the STW26NM60N contains a standard body diode optimized for unclamped inductive switching (EAS = 610 mJ), not synchronous rectification. Its reverse recovery time (370 ns) and Q_rr (5.8 µC) exceed requirements for synchronous FETs; use dedicated SR controllers with logic-level MOSFETs for that function.

Can STW26NM60N be used in parallel configurations?

Yes-its positive temperature coefficient for R_DS(on) (see Figure 10) enables current sharing across paralleled devices. Designers must match gate drive loop inductance and use individual 5–10 Ω gate resistors to prevent oscillation; layout symmetry is critical to avoid thermal runaway.

Is the TO-247 package lead-free and RoHS compliant?

Yes-STW26NM60N is supplied in ECOPACK®2-compliant TO-247 packaging, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1). The device is halogen-free and qualified for reflow soldering per IPC/JEDEC J-STD-020D.3.

STW26NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 165mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW26NM60N FAQ

1.How can I place an order for STW26NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW26NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW26NM60N reliable?

The price and inventory of STW26NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW26NM60N is usually 5 days.

3.What payment methods are accepted for STW26NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW26NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW26NM60N?

STW26NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW26NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW26NM60N?

For technical support, including STW26NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW26NM60N requirements.

6.How does Aetrix verify that STW26NM60N is sourced from the original manufacturer or authorized distributors?

All STW26NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW26NM60N meets industry standards.

7.What is the process for return or replacement of STW26NM60N?

All STW26NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW26NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW26NM60N part is unused and in its original packaging.

Return procedure for STW26NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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