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Toshiba Semiconductor and Storage TK15A50D(STA4,Q,M)

Name: TK15A50D(STA4,Q,M)
Brand: Toshiba Semiconductor and Storage
SKU: TK15A50D(STA4,Q,M)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK15A50D(STA4,Q,M)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK15A50D(STA4,Q,M).pdf

Description:: MOSFET N-CH 500V 15A TO220SIS

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TK15A50D(STA4,Q,M) from Toshiba is a silicon N-channel power MOSFET in the π-MOSⅦ family, designed for high-efficiency switching regulator applications. It features a 500 V drain-source breakdown voltage (V_(BR)DSS), 15 A continuous drain current (I_D), and low R_DS(ON) of 0.24 Ω (typ.) at V_GS = 10 V - enabling reduced conduction loss in offline AC-DC and DC-DC converters.

For engineers reviewing the TK15A50D(STA4,Q,M) datasheet, TK15A50D(STA4,Q,M) pinout, TK15A50D(STA4,Q,M) application, or TK15A50D(STA4,Q,M) equivalent, key selection criteria include avalanche ruggedness (E_AS = 542 mJ), thermal resistance (R_th(ch-c) = 2.5 °C/W), gate charge profile (Q_g = 40 nC), and RoHS-compliant SC-67 package compatibility with through-hole mounting.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage range of 2.0–4.0 V (V_DS = 10 V, I_D = 1 mA), supporting standard 5 V and 10 V gate drive logic. Its high forward transfer admittance (|Y_fs| = 7.0 S typ.) ensures strong transconductance for fast switching transitions.

The device integrates an intrinsic body diode with reverse recovery time (t_rr) of 1600 ns and Q_rr = 20 μC, and is rated for single-pulse avalanche energy up to 542 mJ under defined test conditions (V_DD = 90 V, L = 4.1 mH, I_AR = 15 A), making it suitable for hard-switched flyback and forward converter topologies requiring robust overvoltage protection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - supports 400 VAC input rectified systems with margin for surge and ringing
R_DS(ON)	0.24 Ω (typ.) at V_GS = 10 V - enables <1.8 W conduction loss at 7.5 A continuous operation
I_D (continuous)	15 A at T_c = 25°C - requires heatsinking for >10 A sustained current due to R_th(ch-c) = 2.5 °C/W
Q_g	40 nC - determines gate driver power requirement and influences switching speed in 50–200 kHz SMPS designs
E_AS	542 mJ - provides single-event overvoltage immunity without external snubbers in clamp-based topologies
t_rr / Q_rr	1600 ns / 20 μC - impacts turn-on loss and EMI in synchronous rectification or freewheeling paths
R_th(ch-a)	62.5 °C/W - limits usable power in still-air PCB-mount applications without forced cooling

Pinout & Package

TK15A50D(STA4,Q,M) is housed in the JEITA SC-67 (Toshiba 2-10U1B) through-hole package - a 3-pin, insulated case design optimized for high-voltage isolation and thermal dissipation via copper tab mounting. The package weighs 1.7 g (typ.) and complies with RoHS Directive 2011/65/EU.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Receives voltage-controlled signal to modulate channel conductivity; requires ≤±30 V gate-source rating
2 (Drain)	High-side power terminal	Connects to primary-side high-voltage rail (e.g., rectified AC line); electrically isolated from case
3 (Source)	Reference and return path	Serves as common reference for gate drive and current sensing; bonded to internal substrate and case tab

Key Features

Feature	Design Value
π-MOSⅦ process technology	Optimized cell layout delivering lower R_DS(ON) × Q_g figure-of-merit for improved efficiency in 50–150 kHz switching regulators
Avalanche-rated structure	Guaranteed single-pulse E_AS = 542 mJ enables reliable operation in non-clamped inductive switching without external protection
Low gate leakage (I_GSS ≤ ±1 μA)	Minimizes standby power loss and improves gate drive stability in high-impedance drive circuits
Enhancement-mode threshold	V_th = 2.0–4.0 V ensures clean turn-on with standard logic-level drivers and avoids spurious conduction during noise transients
Integrated body diode	Enables self-contained freewheeling in flyback/forward converters; t_rr = 1600 ns supports moderate-frequency operation with predictable loss

Applications

Offline AC-DC Adapters	Industrial DC-DC Converters
Use Scenario: 30–65 W universal-input (90–264 VAC) flyback converters for industrial instrumentation power supplies. IC Role / Device Role / Timing Role: Primary-side switching transistor handling high-voltage DC bus switching at 65 kHz. Use Value: Low R_DS(ON) reduces conduction loss; avalanche rating eliminates need for external RCD clamp in cost-sensitive designs.	Use Scenario: 12 V output, 5 A isolated forward converter in programmable logic controller (PLC) power modules. IC Role / Device Role / Timing Role: Main switch controlling transformer primary winding with duty cycle modulation. Use Value: High \|Y_fs\| ensures stable gain across temperature; 150°C channel rating supports operation in sealed enclosures.
LED Driver Power Stages	UPS Inverter Half-Bridge
Use Scenario: Constant-current LED drivers for street lighting using quasi-resonant flyback topology. IC Role / Device Role / Timing Role: High-side switch regulating energy transfer into LED string via primary-side sensing. Use Value: Tight V_(BR)DSS distribution (min 500 V) prevents premature breakdown under lightning surge conditions.	Use Scenario: 1 kVA online UPS inverter stage operating from 360 VDC bus with 50 Hz fundamental output. IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration driving LC filter into grid-connected load. Use Value: Robust t_rr/Q_rr characteristics reduce shoot-through risk during commutation; TO-247-compatible footprint simplifies thermal management.

Offline AC-DC Adapters

Industrial DC-DC Converters

Use Scenario: 30–65 W universal-input (90–264 VAC) flyback converters for industrial instrumentation power supplies.

IC Role / Device Role / Timing Role: Primary-side switching transistor handling high-voltage DC bus switching at 65 kHz.

Use Value: Low R_DS(ON) reduces conduction loss; avalanche rating eliminates need for external RCD clamp in cost-sensitive designs.

Use Scenario: 12 V output, 5 A isolated forward converter in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: Main switch controlling transformer primary winding with duty cycle modulation.

Use Value: High |Y_fs| ensures stable gain across temperature; 150°C channel rating supports operation in sealed enclosures.

LED Driver Power Stages

UPS Inverter Half-Bridge

Use Scenario: Constant-current LED drivers for street lighting using quasi-resonant flyback topology.

IC Role / Device Role / Timing Role: High-side switch regulating energy transfer into LED string via primary-side sensing.

Use Value: Tight V_(BR)DSS distribution (min 500 V) prevents premature breakdown under lightning surge conditions.

Use Scenario: 1 kVA online UPS inverter stage operating from 360 VDC bus with 50 Hz fundamental output.

IC Role / Device Role / Timing Role: Upper-leg switch in half-bridge configuration driving LC filter into grid-connected load.

Use Value: Robust t_rr/Q_rr characteristics reduce shoot-through risk during commutation; TO-247-compatible footprint simplifies thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF50	R_DS(ON) = 0.30 Ω (typ.), E_AS = 320 mJ, TO-220FP package (no insulated tab)	Lacks insulated case; requires additional isolation hardware in grounded-drain configurations	Prefer TK15A50D(STA4,Q,M) where creepage/clearance or direct heatsink mounting is required.
IRFBC40A	V_DSS = 600 V, R_DS(ON) = 0.55 Ω (typ.), no specified E_AS, legacy planar process	Higher conduction loss and uncharacterized avalanche capability limit use in energy-recycling topologies	Choose TK15A50D(STA4,Q,M) when designing for higher efficiency and documented ruggedness in repetitive stress environments.

Compared with STP16NF50 and IRFBC40A, TK15A50D(STA4,Q,M) delivers superior R_DS(ON) × Q_g trade-off, guaranteed avalanche performance, and SC-67 insulation - making it optimal for space-constrained, thermally demanding, and safety-critical offline power stages.

Availability

TK15A50D(STA4,Q,M) is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial DC-DC converters, and LED driver power stages requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for TK15A50D(STA4,Q,M) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and memory solutions, with decades of expertise in high-reliability discrete components.

The TK15A50D(STA4,Q,M) belongs to Toshiba's π-MOSⅦ series of high-voltage N-channel MOSFETs, engineered specifically for high-efficiency, high-reliability switching power supplies in industrial and infrastructure applications.

FAQ

What is the maximum continuous drain current rating for TK15A50D(STA4,Q,M) at case temperature 100°C?

The TK15A50D(STA4,Q,M) has a maximum continuous drain current (I_D) of 15 A at T_c = 25°C. At T_c = 100°C, derating applies per the safe operating area curve: I_D ≈ 9.5 A (linearly interpolated from ID max vs. Tc plot in datasheet Figure 5). This reflects thermal limitation due to R_th(ch-c) = 2.5 °C/W and 150°C absolute max channel temperature.

Does TK15A50D(STA4,Q,M) support gate drive from a 5 V microcontroller output?

Yes - TK15A50D(STA4,Q,M) has a gate threshold voltage (V_th) range of 2.0–4.0 V, so a 5 V logic signal fully enhances the channel. However, full R_DS(ON) specification (0.24 Ω) requires V_GS = 10 V; at 5 V, R_DS(ON) increases significantly (~0.8 Ω typ.), raising conduction loss. For optimal efficiency, use a dedicated gate driver or level-shifter to deliver 10 V.

Is TK15A50D(STA4,Q,M) suitable for use in a synchronous rectifier configuration?

No - TK15A50D(STA4,Q,M) is not optimized for synchronous rectification. Its body diode has relatively high reverse recovery charge (Q_rr = 20 μC) and long t_rr (1600 ns), causing significant switching loss and EMI when used as a freewheeling diode in high-frequency (>100 kHz) SR topologies. Dedicated low-Q_rr MOSFETs like the SiR626DP are preferred for that role.

What is the meaning of "STA4,Q,M" suffix in TK15A50D(STA4,Q,M)?

The "STA4,Q,M" suffix denotes Toshiba's internal packaging and marking variant: STA4 indicates tape-and-reel packaging per JEDEC standards, Q signifies RoHS-compliant lead-free plating, and M identifies the specific wafer lot traceability and revision code. This exact ordering part number corresponds to the SC-67 (2-10U1B) through-hole package with insulated tab and 1.7 g mass.

How does the avalanche rating of TK15A50D(STA4,Q,M) compare to typical un-rated MOSFETs in flyback designs?

TK15A50D(STA4,Q,M) is fully characterized for single-pulse avalanche energy (E_AS = 542 mJ), unlike most general-purpose MOSFETs which lack this specification. This allows designers to eliminate external RCD clamps in flyback converters, reducing BOM count and improving reliability - provided operating conditions match the test setup (V_DD = 90 V, L = 4.1 mH, I_AR = 15 A).

TK15A50D(STA4,Q,M) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: π-MOSVII

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK15A50D(STA4,Q,M) FAQ

1.How can I place an order for TK15A50D(STA4,Q,M) through Aetrix?

Please submit a Request for Quotation (RFQ) for TK15A50D(STA4,Q,M) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK15A50D(STA4,Q,M) reliable?

The price and inventory of TK15A50D(STA4,Q,M) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK15A50D(STA4,Q,M) is usually 5 days.

3.What payment methods are accepted for TK15A50D(STA4,Q,M)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK15A50D(STA4,Q,M) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK15A50D(STA4,Q,M)?

TK15A50D(STA4,Q,M) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK15A50D(STA4,Q,M) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK15A50D(STA4,Q,M)?

For technical support, including TK15A50D(STA4,Q,M) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK15A50D(STA4,Q,M) requirements.

6.How does Aetrix verify that TK15A50D(STA4,Q,M) is sourced from the original manufacturer or authorized distributors?

All TK15A50D(STA4,Q,M) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK15A50D(STA4,Q,M) meets industry standards.

7.What is the process for return or replacement of TK15A50D(STA4,Q,M)?

All TK15A50D(STA4,Q,M) units undergo pre-shipment inspection (PSI). If there is an issue with TK15A50D(STA4,Q,M), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK15A50D(STA4,Q,M) part is unused and in its original packaging.

Return procedure for TK15A50D(STA4,Q,M):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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