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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK100E08N1,S1X

Name: TK100E08N1,S1X
Brand: Toshiba Semiconductor and Storage
SKU: TK100E08N1,S1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK100E08N1,S1X

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: TK100E08N1,S1X.pdf

Description:: MOSFET N-CH 80V 100A TO220

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Product details

Overview

TK100E08N1,S1X from Toshiba is a silicon N-channel power MOSFET in the U-MOSⅧ-H series, designed for high-current switching in DC-DC converters and motor drives. It delivers 80 V V_DSS, 214 A continuous drain current (T_c = 25 °C), and ultra-low R_DS(ON) of 2.6 mΩ (typ.) at V_GS = 10 V - enabling high-efficiency operation in industrial power supplies.

For engineers reviewing the TK100E08N1,S1X datasheet, TK100E08N1,S1X pinout, TK100E08N1,S1X application, or TK100E08N1,S1X equivalent, key selection considerations include its TO-220 package thermal performance (R_th(ch-c) = 0.49 °C/W), avalanche ruggedness (E_AS = 278 mJ), and gate charge profile (Q_g = 130 nC) for optimized hard-switching efficiency.

Technical Context

This MOSFET employs Toshiba's U-MOSⅧ-H trench-gate process to achieve low conduction loss while maintaining robust switching behavior. Its enhancement-mode threshold voltage (V_th = 2.0–4.0 V) ensures reliable turn-on with standard logic-level gate drivers, and its low Crss (52 pF) minimizes Miller-induced shoot-through risk in half-bridge configurations.

The device integrates an intrinsic body diode with t_rr = 93 ns and Q_rr = 190 nC (typ.), supporting synchronous rectification and freewheeling in buck and LLC topologies. Its guaranteed single-pulse avalanche energy (278 mJ) and channel temperature limit (150 °C) support design margin in overvoltage transients.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	80 V - supports input rails up to 64 V in DC-DC converters without derating.
R_DS(ON)	2.6 mΩ (typ.) at V_GS = 10 V - reduces conduction loss to <0.67 W at 100 A, lowering heatsink requirements.
I_D (DC)	214 A (T_c = 25 °C) - enables high-power output stages with minimal parallel devices.
E_AS	278 mJ - withstands inductive switching surges in motor control and SMPS without external snubbers.
Q_g	130 nC - balances switching speed and gate drive loss; compatible with 1–2 A peak gate drivers.
C_iss	9000 pF - defines input capacitance for gate driver sizing and loop stability analysis.
t_r/t_f	26 ns / 46 ns - enables efficient operation at 100–500 kHz switching frequencies.

Pinout & Package

TK100E08N1,S1X is housed in a TO-220 package (Toshiba designation: 2-10X1A), with the drain connected internally to the metal tab for direct heatsink mounting and optimal thermal path.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control terminal	Receives gate drive signal; requires ≤±20 V rating and low-impedance drive to minimize switching losses.
2: Drain (heatsink)	High-side power terminal	Electrically and thermally connected to package tab; must be isolated from heatsink unless system ground reference permits.
3: Source	Reference/return terminal	Serves as local ground reference for gate drive; layout must minimize inductance to suppress ringing during fast transitions.

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	2.6 mΩ typ. at V_GS = 10 V enables >97% efficiency in 48 V input, 12 V output 1 kW DC-DC stages.
Avalanche-rated structure	Guaranteed 278 mJ single-pulse E_AS allows safe operation under inductive load switching without external clamping.
Low Crss / high Ciss ratio	Crss = 52 pF vs. Ciss = 9000 pF yields low Miller gain, reducing risk of false turn-on in high-dV/dt environments.
Body diode with fast recovery	t_rr = 93 ns and Q_rr = 190 nC support ZVS/ZCS soft-switching and reduce reverse recovery loss in synchronous designs.
Enhancement-mode V_th	2.0–4.0 V range ensures compatibility with 3.3 V and 5 V microcontrollers and gate drivers without level-shifting.

Applications

Server VRM Power Stage	Industrial Motor Drive Inverter
Use Scenario: High-density 48 V-to-12 V/1 V point-of-load conversion in AI accelerator servers. IC Role / Device Role / Timing Role: Primary high-side switch in multiphase buck converter operating at 300–500 kHz. Use Value: Low R_DS(ON) and Q_g reduce total power loss per phase, enabling 30% higher current density versus legacy MOSFETs.	Use Scenario: 3-phase inverter stage driving 5–10 kW permanent magnet motors in CNC machinery. IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg with active freewheeling. Use Value: Robust avalanche capability and fast body diode recovery eliminate need for external anti-parallel diodes in regenerative braking.
Telecom Rectifier Module	EV Onboard Charger (OBC) PFC Stage
Use Scenario: 48 V telecom rectifier with 3 kW output and 96% efficiency target. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter. Use Value: Low V_DSF (−1.2 V max) and low Q_rr cut conduction and recovery losses by 40% compared to Schottky solutions.	Use Scenario: Boost PFC switch in 6.6 kW bidirectional OBC for Level 2 EV charging. IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology. Use Value: 80 V rating and 214 A DC rating allow operation at full power across 100–265 VAC input range with margin for line surges.

Server VRM Power Stage

Industrial Motor Drive Inverter

Use Scenario: High-density 48 V-to-12 V/1 V point-of-load conversion in AI accelerator servers.

IC Role / Device Role / Timing Role: Primary high-side switch in multiphase buck converter operating at 300–500 kHz.

Use Value: Low R_DS(ON) and Q_g reduce total power loss per phase, enabling 30% higher current density versus legacy MOSFETs.

Use Scenario: 3-phase inverter stage driving 5–10 kW permanent magnet motors in CNC machinery.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg with active freewheeling.

Use Value: Robust avalanche capability and fast body diode recovery eliminate need for external anti-parallel diodes in regenerative braking.

Telecom Rectifier Module

EV Onboard Charger (OBC) PFC Stage

Use Scenario: 48 V telecom rectifier with 3 kW output and 96% efficiency target.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant converter.

Use Value: Low V_DSF (−1.2 V max) and low Q_rr cut conduction and recovery losses by 40% compared to Schottky solutions.

Use Scenario: Boost PFC switch in 6.6 kW bidirectional OBC for Level 2 EV charging.

IC Role / Device Role / Timing Role: Main switching device in continuous conduction mode (CCM) boost topology.

Use Value: 80 V rating and 214 A DC rating allow operation at full power across 100–265 VAC input range with margin for line surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP220N8F6	R_DS(ON) = 2.4 mΩ (typ.), but Q_g = 160 nC - higher gate drive loss and slower switching than TK100E08N1,S1X.	Higher Crss (100 pF) increases risk of Miller-induced turn-on in high-dV/dt half-bridge use.	Prefer TK100E08N1,S1X where gate drive capability is limited or switching frequency exceeds 200 kHz.
IRFP4468PBF	R_DS(ON) = 3.2 mΩ (max), lower avalanche rating (E_AS = 190 mJ), and no specified Q_gd data.	Larger R_th(ch-a) (83.3 °C/W unmounted) limits thermal headroom in compact enclosures.	TK100E08N1,S1X offers superior thermal resistance (R_th(ch-c) = 0.49 °C/W) and documented avalanche performance for mission-critical power stages.

Compared with STP220N8F6 and IRFP4468PBF, TK100E08N1,S1X provides the lowest combined conduction–switching loss metric (R_DS(ON) × Q_g) and highest guaranteed avalanche energy - making it optimal for high-reliability, high-frequency industrial and telecom power designs.

Availability

TK100E08N1,S1X is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply and long-term manufacturability.

Supply support for TK100E08N1,S1X includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors and power ICs, with leadership in trench-gate MOSFET technology and automotive-grade reliability.

The TK100E08N1,S1X belongs to Toshiba's U-MOSⅧ-H high-efficiency power MOSFET family, engineered specifically for high-current, high-frequency switching in industrial and infrastructure power systems.

FAQ

What is the maximum continuous drain current rating for TK100E08N1,S1X?

The TK100E08N1,S1X is rated for 214 A continuous drain current at case temperature T_c = 25 °C. This rating assumes proper heatsinking - the actual usable current drops with increasing case temperature, following the derating curve in Figure 8.11 of the official datasheet. At T_c = 100 °C, the DC current limit falls to approximately 100 A.

Does TK100E08N1,S1X support logic-level gate drive?

TK100E08N1,S1X has an enhancement-mode threshold voltage (V_th) of 2.0–4.0 V, making it compatible with 3.3 V and 5 V logic-level gate drivers. However, full R_DS(ON) specification (2.6 mΩ typ.) requires V_GS = 10 V; operation at 5 V yields higher on-resistance and increased conduction loss.

What is the thermal resistance from channel to case for TK100E08N1,S1X?

The TK100E08N1,S1X has a maximum channel-to-case thermal resistance (R_th(ch-c)) of 0.49 °C/W when mounted on a heatsink per Toshiba's recommended footprint. This low value reflects the TO-220 package's direct-drain-to-tab construction, enabling efficient heat transfer to external cooling surfaces.

Is TK100E08N1,S1X suitable for avalanche operation?

Yes - TK100E08N1,S1X is fully characterized for single-pulse avalanche with a guaranteed E_AS of 278 mJ at T_ch = 25 °C. This rating applies under defined test conditions (V_DD = 64 V, L = 21.4 µH, I_AR = 100 A) and supports design margin in inductive switching applications like motor drives and SMPS.

What are the gate charge characteristics of TK100E08N1,S1X?

The TK100E08N1,S1X has a total gate charge (Q_g) of 130 nC (typ.) at V_GS = 10 V and I_D = 100 A. Its gate-source charge (Q_gs1) is 45 nC and gate-drain charge (Q_gd) is 33 nC - values critical for calculating gate driver peak current and optimizing switching transition times.

TK100E08N1,S1X Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSVIII-H

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.2mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9000 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 255W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

TK100E08N1,S1X FAQ

1.How can I place an order for TK100E08N1,S1X through Aetrix?

Please submit a Request for Quotation (RFQ) for TK100E08N1,S1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK100E08N1,S1X reliable?

The price and inventory of TK100E08N1,S1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK100E08N1,S1X is usually 5 days.

3.What payment methods are accepted for TK100E08N1,S1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK100E08N1,S1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK100E08N1,S1X?

TK100E08N1,S1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK100E08N1,S1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK100E08N1,S1X?

For technical support, including TK100E08N1,S1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK100E08N1,S1X requirements.

6.How does Aetrix verify that TK100E08N1,S1X is sourced from the original manufacturer or authorized distributors?

All TK100E08N1,S1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK100E08N1,S1X meets industry standards.

7.What is the process for return or replacement of TK100E08N1,S1X?

All TK100E08N1,S1X units undergo pre-shipment inspection (PSI). If there is an issue with TK100E08N1,S1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK100E08N1,S1X part is unused and in its original packaging.

Return procedure for TK100E08N1,S1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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