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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK040N65Z,S1F

Name: TK040N65Z,S1F
Brand: Toshiba Semiconductor and Storage
SKU: TK040N65Z,S1F
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK040N65Z,S1F

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: TK040N65Z,S1F.pdf

Description:: MOSFET N-CH 650V 57A TO247

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Product details

Overview

TK040N65Z,S1F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel DTMOS™ IV superjunction MOSFET designed for high-efficiency 650 V switching power supplies. It delivers R_DS(ON) = 0.033 Ω (typ.), 57 A continuous drain current, and 360 W power dissipation at T_c = 25 °C in TO-247 package - enabling compact, high-power-density AC/DC and DC/DC converters.

For engineers reviewing the TK040N65Z,S1F datasheet, TK040N65Z,S1F pinout, TK040N65Z,S1F application, or TK040N65Z,S1F equivalent, key selection criteria include avalanche ruggedness (E_AS = 702 mJ), fast switching (t_r = 65 ns, t_f = 5 ns), low gate charge (Q_g = 105 nC), and diode reverse recovery performance (t_rr = 410 ns, Q_rr = 8 µC) in hard-switched PFC and LLC resonant topologies.

Technical Context

This device implements Toshiba's DTMOS™ IV process with optimized cell pitch and deep-trench gate structure to simultaneously reduce R_DS(ON) and output charge (Q_oss = 230 pF typ. at V_DS = 300 V). Its enhancement-mode operation (V_th = 3–4 V) supports standard 10 V gate drive while maintaining robust dv/dt immunity (≥120 V/ns).

The integrated body diode exhibits low forward voltage (V_DSF ≤ −1.7 V at I_DR = 57 A) and controlled reverse recovery (I_rr = 39 A, t_rr = 410 ns), reducing switching losses and EMI in bridge-leg configurations. Thermal design is enabled by R_th(ch-c) = 0.347 °C/W and T_ch rating up to 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports universal-input offline SMPS with margin against line surges and ringing.
R_DS(ON)	0.033 Ω (typ.) - enables <1.5 W conduction loss at 57 A, critical for >96% efficiency PFC stages.
I_D (DC)	57 A - sustains full-load current in 1–3 kW server PSUs and industrial motor drives without derating.
E_AS	702 mJ - withstands single-pulse inductive energy in hard-switched flyback or forward converters.
Q_g	105 nC - minimizes gate driver power demand and enables <100 kHz operation with low-loss Si drivers.
t_r/t_f	65 ns / 5 ns - reduces switching transition time, lowering overlap loss in ZVS/ZCS circuits.
dv/dt immunity	≥120 V/ns - prevents false turn-on during high-slew-rate commutation in half-bridge inverters.

Pinout & Package

TK040N65Z,S1F is housed in a TO-247 (JEITA SC-65, Toshiba 2-16L1A) package with isolated heatsink-connected drain terminal for optimal thermal management in high-power applications.

Pin/Terminal	Circuit Role	Design Meaning
1: Gate	Control electrode	Receives 10 V logic-level drive; requires <2 Ω gate resistance to damp oscillation and control dV/dt.
2: Drain (heatsink)	Main current path anode	Electrically connected to metal tab - must be mounted to heatsink with electrically insulating thermal interface.
3: Source	Main current path cathode & reference node	Serves as return path for load current and gate drive reference; layout must minimize inductance to suppress ringing.

Key Features

Feature	Design Value
Low R_DS(ON) × Q_g figure-of-merit	3.46 Ω·nC - balances conduction and switching loss for high-frequency PFC operation.
Fast body diode recovery	t_rr = 410 ns, Q_rr = 8 µC - reduces cross-conduction loss and EMI in synchronous rectification and bridge legs.
High avalanche energy rating	E_AS = 702 mJ - eliminates need for external snubbers in clamp-based topologies.
Enhancement-mode threshold	V_th = 3–4 V - ensures reliable turn-off with 0 V gate bias and compatibility with standard PWM controllers.
Low C_iss/C_oss ratio	C_iss = 6250 pF, C_oss = 140 pF - improves voltage-dependent capacitance linearity for soft-switching predictability.

Applications

Server Power Supply	Industrial Motor Drive
Use Scenario: Primary-side switch in 2 kW active-clamp forward converter for datacenter PSU. IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 400 V bus with 50–100 kHz switching. Use Value: Low R_DS(ON) and high E_AS enable reliable operation under transient overloads without derating.	Use Scenario: Inverter leg switch in 7.5 kW variable-frequency drive for HVAC compressors. IC Role / Device Role / Timing Role: 650 V, 57 A power stage transistor in three-phase IGBT replacement topology. Use Value: Fast t_r/t_f and low Q_g reduce gate drive loss and improve PWM resolution at 16 kHz carrier frequency.
Telecom Rectifier	Renewable Energy Inverter
Use Scenario: Boost PFC switch in 3 kW telecom rectifier operating at 100 kHz with CRM/CCM hybrid control. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) and continuous conduction mode (CCM) PFC switch. Use Value: Low C_oss and high dv/dt immunity ensure stable zero-current switching across wide input voltage range.	Use Scenario: DC-link switch in 5 kW string inverter MPPT stage interfacing photovoltaic arrays. IC Role / Device Role / Timing Role: High-reliability 650 V switching device in unidirectional DC–DC boost converter. Use Value: 150 °C channel temperature rating and R_th(ch-c) = 0.347 °C/W support operation in sealed outdoor enclosures.

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 2 kW active-clamp forward converter for datacenter PSU.

IC Role / Device Role / Timing Role: High-voltage, high-current main switching element handling 400 V bus with 50–100 kHz switching.

Use Value: Low R_DS(ON) and high E_AS enable reliable operation under transient overloads without derating.

Use Scenario: Inverter leg switch in 7.5 kW variable-frequency drive for HVAC compressors.

IC Role / Device Role / Timing Role: 650 V, 57 A power stage transistor in three-phase IGBT replacement topology.

Use Value: Fast t_r/t_f and low Q_g reduce gate drive loss and improve PWM resolution at 16 kHz carrier frequency.

Telecom Rectifier

Renewable Energy Inverter

Use Scenario: Boost PFC switch in 3 kW telecom rectifier operating at 100 kHz with CRM/CCM hybrid control.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) and continuous conduction mode (CCM) PFC switch.

Use Value: Low C_oss and high dv/dt immunity ensure stable zero-current switching across wide input voltage range.

Use Scenario: DC-link switch in 5 kW string inverter MPPT stage interfacing photovoltaic arrays.

IC Role / Device Role / Timing Role: High-reliability 650 V switching device in unidirectional DC–DC boost converter.

Use Value: 150 °C channel temperature rating and R_th(ch-c) = 0.347 °C/W support operation in sealed outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW62N65M5	R_DS(ON) = 0.035 Ω (typ.), Q_g = 115 nC, TO-247 package, same V_DSS.	Higher Q_g increases gate drive loss; slightly lower E_AS (620 mJ) limits surge tolerance.	Acceptable where gate drive capability exceeds 2 A peak and avalanche margin is less critical.
IPP65R041CFD7	R_DS(ON) = 0.041 Ω (typ.), Q_g = 92 nC, CoolMOS™ CFD7, TO-220FP variant available.	Lower Q_g benefits high-frequency designs but higher R_DS(ON) raises conduction loss above 30 A.	Preferred for space-constrained designs requiring TO-220FP or where switching loss dominates over conduction loss.

Compared with STW62N65M5 and IPP65R041CFD7, TK040N65Z,S1F offers the lowest R_DS(ON) × Q_g product among 650 V TO-247 MOSFETs, making it optimal for thermally constrained, high-current PFC and primary-side SMPS where both conduction and switching efficiency matter.

Availability

TK040N65Z,S1F is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and renewable energy inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for TK040N65Z,S1F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a global semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in silicon power MOSFET innovation.

The TK040N65Z,S1F belongs to Toshiba's DTMOS™ IV superjunction MOSFET family, engineered specifically for high-efficiency, high-reliability 600–650 V switching applications in industrial and computing power systems.

FAQ

What is the maximum continuous drain current for TK040N65Z,S1F at case temperature 100 °C?

The TK040N65Z,S1F supports 57 A DC at T_c = 25 °C. At T_c = 100 °C, its rated I_D drops to approximately 38 A based on the guaranteed maximum curve in Figure 8.17 of the datasheet. This derating ensures safe operation within the 150 °C channel temperature limit and accounts for thermal resistance between junction and case (R_th(ch-c) = 0.347 °C/W). Always verify actual thermal design using measured T_c.

Does TK040N65Z,S1F have a built-in body diode, and what are its key recovery parameters?

Yes, TK040N65Z,S1F integrates a monolithic body diode with V_DSF ≤ −1.7 V at I_DR = 57 A, t_rr = 410 ns (typ.), Q_rr = 8 µC (typ.), and I_rr = 39 A (typ.). These values are measured under V_DD = 400 V, I_DR = 28.5 A, and −dI_DR/dt = 100 A/µs conditions. The diode's soft recovery characteristic helps reduce EMI and voltage overshoot in bridge configurations.

Can TK040N65Z,S1F be used in avalanche mode, and what is its single-pulse rating?

Yes, TK040N65Z,S1F is fully rated for single-pulse avalanche operation with E_AS = 702 mJ (typ.) at T_ch = 25 °C, tested per Note 2 (V_DD = 90 V, L = 6.16 mH, I_AS = 14.2 A). This rating allows safe energy absorption during inductive switching transients without external clamping in properly designed circuits - a key advantage over non-avalanche-rated MOSFETs.

What is the gate threshold voltage range for TK040N65Z,S1F, and how does it affect drive requirements?

The TK040N65Z,S1F has a gate threshold voltage V_th of 3–4 V (min–max) at V_DS = 10 V and I_D = 2.85 mA. This enhancement-mode range ensures reliable turn-off at 0 V gate bias and compatibility with standard 10 V gate drivers. Unlike depletion-mode devices, no negative bias is needed, simplifying drive circuitry and improving system safety.

Is TK040N65Z,S1F RoHS compliant, and what marking indicates compliance?

Yes, TK040N65Z,S1F is RoHS compliant. Per Toshiba's marking note, an underlined lot number on the device indicates [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] status. Non-underlined markings indicate lead-containing versions. For full environmental documentation and material declarations, contact Toshiba sales or refer to the official product page for TK040N65Z,S1F.

TK040N65Z,S1F Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 28.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 2.85mA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6250 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 360W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

TK040N65Z,S1F FAQ

1.How can I place an order for TK040N65Z,S1F through Aetrix?

Please submit a Request for Quotation (RFQ) for TK040N65Z,S1F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK040N65Z,S1F reliable?

The price and inventory of TK040N65Z,S1F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK040N65Z,S1F is usually 5 days.

3.What payment methods are accepted for TK040N65Z,S1F?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK040N65Z,S1F transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK040N65Z,S1F?

TK040N65Z,S1F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK040N65Z,S1F order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK040N65Z,S1F?

For technical support, including TK040N65Z,S1F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK040N65Z,S1F requirements.

6.How does Aetrix verify that TK040N65Z,S1F is sourced from the original manufacturer or authorized distributors?

All TK040N65Z,S1F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK040N65Z,S1F meets industry standards.

7.What is the process for return or replacement of TK040N65Z,S1F?

All TK040N65Z,S1F units undergo pre-shipment inspection (PSI). If there is an issue with TK040N65Z,S1F, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK040N65Z,S1F part is unused and in its original packaging.

Return procedure for TK040N65Z,S1F:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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