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STMicroelectronics STW26NM50
- Part No.:
- STW26NM50
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW26NM50.pdf
- Description:
- MOSFET N-CH 500V 30A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:57
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Product details
Overview
STW26NM50 from STMicroelectronics is an N-channel 500 V, 30 A, 0.10 Ω RDS(on) Power MOSFET in TO-247 package, leveraging MDmesh™ technology for high-voltage switching in offline SMPS, PFC stages, and industrial motor drives. It delivers 15 V/ns dv/dt immunity, 740 mJ single-pulse avalanche energy, and integrated gate-source Zener diodes rated at 30 V.
For engineers reviewing the STW26NM50 datasheet, STW26NM50 pinout, STW26NM50 application, or STW26NM50 equivalent, key selection criteria include its 500 V VDSS, 0.10 Ω RDS(on) at VGS = 10 V, 120 A pulsed drain current, 313 W power dissipation, and built-in 30 V gate-source Zener protection - all critical for ruggedized high-voltage DC-DC and AC-DC converter design.
Technical Context
This MOSFET employs ST's MDmesh™ process-combining multi-drain architecture with PowerMESH™ horizontal layout-to achieve low conduction loss while maintaining high dv/dt robustness (15 V/ns) and unclamped inductive switching capability. Its internal back-to-back Zener diodes provide 6 kV HBM ESD protection and transient gate-source clamping without external components.
The device operates up to 150 °C junction temperature with 0.4 °C/W Rthj-case, enabling high-power density designs. Avalanche performance is characterized at 13 A repetitive IAR and 740 mJ EAS, supporting reliable operation under overvoltage stress in flyback and resonant topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 500 V - supports primary-side switching in universal-input offline converters up to 380 V DC bus |
| RDS(on) max | 0.12 Ω @ VGS = 10 V - enables <1.5 W conduction loss at 30 A continuous drain current |
| ID (TC = 25 °C) | 30 A - rated for high-current PFC boost stages and half-bridge output switches |
| EAS | 740 mJ - ensures survivability during unclamped inductive switching events in hard-switched topologies |
| dv/dt rating | 15 V/ns - suppresses false turn-on in high-noise bridge configurations with fast voltage transients |
| Qg | 76 nC - determines gate drive power requirement and switching speed trade-off in 50–100 kHz SMPS |
| BVGSO | 30 V - integrated gate-source Zener clamps transients, eliminating need for external TVS diode |
Pinout & Package
STW26NM50 uses a standard TO-247 package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain, requiring insulated mounting in most applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | Main high-voltage current path | Electrically tied to drain region; serves as thermal interface and high-side switching node |
| Pin 1 (Source) | Reference node for gate control and current return | Provides low-inductance source connection; used for gate drive reference and current sensing |
| Pin 2 (Gate) | Control terminal for channel modulation | Receives 10 V logic-level drive; protected by integrated 30 V Zener against overvoltage |
Key Features
| Feature | Design Value |
|---|---|
| MDmesh™ technology | Enables 0.10 Ω RDS(on) at 500 V rating - 30% lower on-resistance than conventional planar MOSFETs in same voltage class |
| High dv/dt immunity | 15 V/ns - prevents spurious turn-on in phase-shifted full-bridge or LLC resonant converters with fast voltage slew |
| Integrated gate-source Zener | 30 V breakdown - eliminates discrete clamping diode, reducing BOM count and PCB area in gate driver circuits |
| Avalanche-rated operation | 740 mJ EAS - allows safe operation under inductive fault conditions without external snubbers in UPS and solar inverters |
| Enhanced ESD robustness | 6 kV HBM - improves manufacturing yield and field reliability in automated assembly environments |
Applications
| Industrial Switched-Mode Power Supplies | Power Factor Correction (PFC) Boost Stages |
|---|---|
Use Scenario: Primary-side switch in 500–1000 W open-frame AC-DC supplies for factory automation controllers. IC Role / Device Role / Timing Role: High-voltage switching element in discontinuous conduction mode (DCM) flyback topology operating at 65 kHz. Use Value: 500 V VDSS and 0.12 Ω RDS(on) enable >90% efficiency at full load while surviving 380 V DC link surges. | Use Scenario: Active boost switch in 3-phase rectified input PFC front-end for HVAC variable-frequency drives. IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) PFC switch handling 30 A peak current at 100 kHz switching frequency. Use Value: 30 A ID rating and 313 W power dissipation support high-current, high-efficiency PFC without forced air cooling. |
| Uninterruptible Power Supplies (UPS) | Solar Microinverters |
Use Scenario: Inverter leg switch in line-interactive UPS delivering 1 kVA output with battery backup. IC Role / Device Role / Timing Role: Half-bridge output stage switch subjected to repetitive unclamped inductive stress during transfer switching. Use Value: 740 mJ EAS and 15 V/ns dv/dt rating ensure reliable operation during grid-to-battery transition transients. | Use Scenario: DC-AC H-bridge switch in 300 W microinverter converting PV panel output to 230 V AC grid. IC Role / Device Role / Timing Role: High-side and low-side switching element in transformerless inverter topology with bipolar PWM. Use Value: Integrated 30 V gate-source Zener eliminates external clamping, reducing component count and improving long-term reliability in outdoor deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW20NM50 | Lower RDS(on) (0.19 Ω), reduced ID (20 A), same 500 V rating | Better suited for lower-current, higher-efficiency PFC where thermal margin is constrained | Select when peak current stays below 20 A and lower gate charge (55 nC) reduces driver complexity |
| IPP60R099C6 | 600 V rating, 0.099 Ω RDS(on), Superjunction CoolMOS™, TO-220FP package | Higher voltage margin but lower power dissipation (130 W) and no integrated Zener | Choose for space-constrained designs needing 600 V headroom, accepting need for external gate protection |
Compared with STW20NM50 and IPP60R099C6, STW26NM50 uniquely balances 30 A current capability, 500 V rating, integrated 30 V gate Zener, and 740 mJ avalanche energy - making it optimal for thermally demanding, high-reliability industrial SMPS where gate protection and fault robustness are non-negotiable.
Availability
STW26NM50 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, power factor correction boost stages, and uninterruptible power supply inverters requiring stable component supply and long-term manufacturability.
Supply support for STW26NM50 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
The STW26NM50 belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in industrial and renewable energy systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The STW26NM50 supports 18.9 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by its 0.4 °C/W Rthj-case and 150 °C maximum junction temperature, ensuring safe operation in convection-cooled industrial enclosures.
Does STW26NM50 require an external gate resistor for stability?
Yes - a gate resistor (typically 4.7 Ω, per Figure 15 test circuit) is required to dampen ringing and control switching speed. The device's 76 nC total gate charge and 3000 pF Ciss interact with PCB trace inductance; omitting the resistor risks oscillation and increased EMI in hard-switched topologies above 50 kHz.
Can STW26NM50 be used in synchronous rectification?
No - STW26NM50 is not optimized for synchronous rectification. Its body diode has 400 ns reverse recovery time and 5.5 µC Qrr at 25 °C, resulting in significant switching loss and voltage overshoot when used as a freewheeling diode. Dedicated SR controllers paired with low-Qrr MOSFETs are recommended instead.
Is the TO-247 package lead-free and RoHS compliant?
Yes - STW26NM50 is offered in ECOPACK®-compliant TO-247 packaging, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device carries the "ECOPACK2" designation per ST's environmental compliance documentation, with lead-free terminations and halogen-free molding compound.
STW26NM50 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 120mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 106 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 313W (Tc)
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW26NM50 FAQ
1.How can I place an order for STW26NM50 through Aetrix?
Please submit a Request for Quotation (RFQ) for STW26NM50 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW26NM50 reliable?
The price and inventory of STW26NM50 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW26NM50 is usually 5 days.
3.What payment methods are accepted for STW26NM50?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW26NM50 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW26NM50?
STW26NM50 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW26NM50 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW26NM50?
For technical support, including STW26NM50 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW26NM50 requirements.
6.How does Aetrix verify that STW26NM50 is sourced from the original manufacturer or authorized distributors?
All STW26NM50 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW26NM50 meets industry standards.
7.What is the process for return or replacement of STW26NM50?
All STW26NM50 units undergo pre-shipment inspection (PSI). If there is an issue with STW26NM50, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW26NM50 part is unused and in its original packaging.
Return procedure for STW26NM50:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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