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Home > Products  > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Speed Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Capacitance @ Vr, F Grade Qualification Mounting Type Supplier Device Package Operating Temperature - Junction
AR4PGHM3_A/H

AR4PGHM3_A/H

DIODE AVALANCHE 400V 2A TO277A

Vishay General Semiconductor - Diodes Division

 7,915 0.00
RFQ
AR4PGHM3_A/H

Datasheet

 		eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 400 V 2A 1.6 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 400 V 77pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR4PGHM3_A/I

AR4PGHM3_A/I

DIODE AVALANCHE 400V 2A TO277A

Vishay General Semiconductor - Diodes Division

 4,392 0.00
RFQ
AR4PGHM3_A/I

Datasheet

 		eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 400 V 2A 1.6 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 400 V 77pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR4PJHM3_A/H

AR4PJHM3_A/H

DIODE AVALANCHE 600V 2A TO277A

Vishay General Semiconductor - Diodes Division

 4,215 0.00
RFQ
AR4PJHM3_A/H

Datasheet

 		eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 600 V 2A 1.6 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 600 V 77pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR4PJHM3_A/I

AR4PJHM3_A/I

DIODE AVALANCHE 600V 2A TO277A

Vishay General Semiconductor - Diodes Division

 5,901 0.00
RFQ
AR4PJHM3_A/I

Datasheet

 		eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 600 V 2A 1.6 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 140 ns 10 µA @ 600 V 77pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR4PKHM3_A/H

AR4PKHM3_A/H

DIODE AVALANCHE 800V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

 6,862 0.00
RFQ
AR4PKHM3_A/H

Datasheet

 		eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 800 V 1.8A 1.9 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 10 µA @ 800 V 55pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR4PKHM3_A/I

AR4PKHM3_A/I

DIODE AVALANCHE 800V 1.8A TO277A

Vishay General Semiconductor - Diodes Division

 6,605 0.00
RFQ
AR4PKHM3_A/I

Datasheet

 		eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 800 V 1.8A 1.9 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 10 µA @ 800 V 55pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
AR4PMHM3_A/H

AR4PMHM3_A/H

DIODE AVALANCHE 1KV 1.8A TO277A

Vishay General Semiconductor - Diodes Division

 2,439 0.00
RFQ
AR4PMHM3_A/H

Datasheet

 		eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 1000 V 1.8A 1.9 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 10 µA @ 1000 V 55pF @ 4V, 1MHz Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -55°C ~ 175°C
TST20U100C

TST20U100C

DIODE SCHOTTKY 100V 10A TO220AB

Taiwan Semiconductor Corporation

 6,383 0.00
RFQ
TST20U100C

Datasheet

 		- TO-220-3 Tube Obsolete Schottky 100 V 10A 790 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V - - - Through Hole TO-220AB -55°C ~ 150°C
VS-12TQ035S-M3

VS-12TQ035S-M3

DIODE SCHOTTKY 35V 15A TO263AB

Vishay General Semiconductor - Diodes Division

 6,595 0.00
RFQ
VS-12TQ035S-M3

Datasheet

 		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 35 V 15A 560 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 1.75 mA @ 35 V 900pF @ 5V, 1MHz - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
HERAF803GH

HERAF803GH

50NS, 8A, 200V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

 3,830 0.00
RFQ
HERAF803GH

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 200 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF803G

HERAF803G

50NS, 8A, 200V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

 5,364 0.00
RFQ
HERAF803G

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 200 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF801GH

HERAF801GH

50NS, 8A, 50V, HIGH EFFICIENT RE

Taiwan Semiconductor Corporation

 5,329 0.00
RFQ
HERAF801GH

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 50 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF801G

HERAF801G

50NS, 8A, 50V, HIGH EFFICIENT RE

Taiwan Semiconductor Corporation

 8,554 0.00
RFQ
HERAF801G

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 50 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1003GH

HERAF1003GH

50NS, 10A, 200V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

 8,784 0.00
RFQ
HERAF1003GH

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 200 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF802G

HERAF802G

50NS, 8A, 100V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

 8,259 0.00
RFQ
HERAF802G

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 100 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF802GH

HERAF802GH

50NS, 8A, 100V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

 4,945 0.00
RFQ
HERAF802GH

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 100 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF1003G

HERAF1003G

50NS, 10A, 200V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

 5,946 0.00
RFQ
HERAF1003G

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 200 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1001GH

HERAF1001GH

50NS, 10A, 50V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

 4,897 0.00
RFQ
HERAF1001GH

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 50 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
HERAF1001G

HERAF1001G

50NS, 10A, 50V, HIGH EFFICIENT R

Taiwan Semiconductor Corporation

 4,646 0.00
RFQ
HERAF1001G

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 50 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 80pF @ 4V, 1MHz - - Through Hole ITO-220AC -55°C ~ 150°C
HERAF1002GH

HERAF1002GH

50NS, 10A, 100V, HIGH EFFICIENT

Taiwan Semiconductor Corporation

 6,542 0.00
RFQ
HERAF1002GH

Datasheet

 		- TO-220-2 Full Pack Tube Active Standard 100 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 80pF @ 4V, 1MHz Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
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