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Taiwan Semiconductor Corporation HERAF803GH
- Part No.:
- HERAF803GH
- Manufacturer:
- Taiwan Semiconductor Corporation
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
HERAF803GH.pdf
- Description:
- 50NS, 8A, 200V, HIGH EFFICIENT R
- Quantity:
- Payment:
- Shipping:
Inventory:3,830
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Product details
Overview
HERAF803GH from Taiwan Semiconductor is an AEC-Q101-qualified, glass-passivated, single-die high-efficiency rectifier in ITO-220AC package, rated for 200 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF), and 150 A non-repetitive surge current (IFSM), used in automotive DC-DC converters and freewheeling paths.
For engineers reviewing the HERAF803GH datasheet, HERAF803GH pinout, HERAF803GH application, or HERAF803GH equivalent, key selection criteria include its 200 V VRRM rating, 1.0 V max forward voltage at 8 A/25°C, 50 ns reverse recovery time, junction-to-case thermal resistance of 2°C/W, and AEC-Q101 qualification for under-hood automotive use.
Technical Context
This device is a unidirectional silicon planar epitaxial power rectifier with glass-passivated junction, optimized for high-efficiency switching-mode power supplies. Its 200 V VRRM and 50 ns trr support fast-switching topologies including flyback and forward converters where low conduction loss and minimal reverse recovery charge are critical.
The ITO-220AC package provides direct metal mounting to heatsinks with 0.56 N·m maximum torque, and its matte tin-plated leads meet J-STD-002 solderability requirements. Thermal performance is defined by RθJC = 2°C/W, enabling reliable operation up to TJ = 150°C in automotive ambient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 200 V - Maximum repetitive reverse blocking voltage; defines usable input voltage range in boost/flyback stages |
| IF | 8 A - Continuous average forward current at TC = 100°C; sets output power capability in 12–48 V DC-DC designs |
| IFSM | 150 A - Peak non-repetitive surge current (8.3 ms sine); supports cold-crank and load-dump transient immunity |
| VF (max) | 1.0 V @ 8 A, 25°C - Low conduction loss reduces heat generation and improves efficiency in high-current paths |
| trr | 50 ns - Fast reverse recovery minimizes switching losses and EMI in >100 kHz SMPS applications |
| RθJC | 2°C/W - Enables direct heatsink mounting with predictable thermal rise; simplifies thermal design for automotive modules |
| AEC-Q101 | Qualified - Meets stress-test requirements for automotive discrete semiconductors, including temperature cycling and HTRB |
Pinout & Package
Package: ITO-220AC - 3-terminal, isolated tab, through-hole power package with matte tin-plated leads; case serves as cathode terminal; polarity marked on device body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Input current entry | Connected to source/switch node in freewheeling or output rectification path |
| Cathode (Tab / Lead 2) | Output current exit | Electrically connected to heatsink; must be insulated if heatsink is grounded |
| NC / Mechanical Tab | Thermal interface | Isolated metal tab enables direct thermal coupling without electrical connection to circuit ground |
Key Features
| Feature | Design Value |
|---|---|
| Glass-passivated junction | Enhances moisture resistance and long-term reliability in humid, high-vibration automotive environments |
| AEC-Q101 qualification | Validates robustness for automotive under-hood applications including engine control units and ADAS power supplies |
| UL Recognized (E-326243) | Confirms flammability compliance (UL 94V-0) and safety certification for end-equipment approvals |
| Halogen-free construction | Meets IEC 61249-2-21, supporting RoHS-compliant and environmentally regulated manufacturing |
| Low VF + fast trr combination | Reduces total power loss (conduction + switching) versus standard FRDs in 100–500 kHz converters |
Applications
| Automotive DC-DC Converters | Industrial Switching Inverters |
|---|---|
Use Scenario: Step-down conversion from 48 V battery to 12 V subsystem rail in mild-hybrid vehicles. IC Role / Device Role / Timing Role: Output rectifier in synchronous or quasi-resonant buck converter; handles continuous 8 A load with transient surges. Use Value: 1.0 V VF and 50 ns trr minimize conduction and switching losses, improving system efficiency by ≥1.2% over legacy FRDs. | Use Scenario: Freewheeling diode in three-phase IGBT-based motor drives operating at 10–20 kHz PWM frequency. IC Role / Device Role / Timing Role: Clamps inductive kickback during IGBT turn-off; absorbs energy from motor windings. Use Value: 150 A IFSM withstands repeated motor stall currents; 2°C/W RθJC ensures stable junction temperature under sustained overload. |
| Telecom Power Supplies | Renewable Energy Gate Drivers |
Use Scenario: Secondary-side rectification in 48 V input telecom rectifiers delivering 50–100 W per board. IC Role / Device Role / Timing Role: High-frequency output rectifier in active-clamp forward topology running at 250 kHz. Use Value: 50 ns trr prevents cross-conduction loss and reduces EMI filter size; UL recognition supports EN 62368-1 compliance. | Use Scenario: Bootstrap diode in half-bridge gate driver circuits for solar microinverters. IC Role / Device Role / Timing Role: Charges high-side gate drive capacitor during low-side conduction phase. Use Value: 200 V VRRM safely blocks bootstrap node voltage swing; glass passivation ensures lifetime stability in outdoor temperature cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH8R02DJF | Same ITO-220AC package, 200 V VRRM, but VF = 1.15 V (max) at 8 A; trr = 45 ns; no AEC-Q101 qualification | Targeted at industrial/commercial SMPS; lacks automotive stress-test validation | Select when AEC-Q101 is not required and slightly higher VF is acceptable for cost optimization |
| VS-8EWH02FN-M3 | 200 V VRRM, VF = 0.95 V (typ) at 8 A, trr = 55 ns, AEC-Q101 qualified, same ITO-220AC package | Designed specifically for automotive infotainment and body electronics; tighter VF distribution | Prefer for new automotive designs requiring lower typical VF and full AEC-Q101 traceability |
Compared with STTH8R02DJF, HERAF803GH offers lower max VF and automotive qualification; versus VS-8EWH02FN-M3, it trades 0.05 V higher typical VF for broader surge margin and established field history in engine control modules.
Availability
HERAF803GH is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor drives, and telecom rectification requiring stable component supply, AEC-Q101 compliance, and high-surge robustness.
Supply support for HERAF803GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and power discrete manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.
The HERAF series targets high-reliability power rectification in automotive and industrial systems, emphasizing AEC-Q101 qualification, thermal robustness, and fast switching performance for next-generation SMPS designs.
FAQ
What is the maximum junction temperature rating for HERAF803GH?
The HERAF803GH has a maximum junction temperature (TJ MAX) of +150°C, validated across its full operating range from –55°C to +150°C. This rating enables deployment in under-hood automotive environments and high-ambient industrial enclosures. Derating curves in the official TSC datasheet define safe IF vs. TC limits, and the 2°C/W RθJC value allows accurate thermal modeling when mounted to a heatsink.
Is HERAF803GH pin-compatible with other devices in the HERAF80xG family?
Yes, all HERAF801G through HERAF808G variants-including HERAF803GH-share identical ITO-220AC mechanical dimensions, pinout, and terminal configuration. The only differences are VRRM rating (200 V for HERAF803GH), forward voltage profile, and reverse recovery time; PCB layout and mounting hardware remain unchanged across the family.
Does HERAF803GH require a heatsink in standard operation?
HERAF803GH requires heatsinking when operating near its 8 A IF rating at elevated ambient temperatures. At TC = 100°C, full 8 A current is supported; without forced cooling, a heatsink is necessary to maintain TC ≤ 100°C. The 2°C/W RθJC value means even modest heatsink thermal resistance (e.g., 5°C/W) keeps TJ within 150°C at 8 A with TA = 85°C.
What does the 'H' suffix in HERAF803GH signify?
The 'H' suffix in HERAF803GH explicitly denotes AEC-Q101 qualification, confirming that the device has passed the full suite of stress tests-including high-temperature reverse bias (HTRB), temperature cycling (TC), and unbiased highly accelerated stress test (UHAST)-required for automotive discrete semiconductors. This distinguishes HERAF803GH from the non-H variant HERAF803G.
How does the reverse recovery time of HERAF803GH impact EMI in switching converters?
HERAF803GH's 50 ns trr reduces high-frequency ringing and dv/dt-induced noise during diode turn-off, directly lowering conducted and radiated EMI in 100–500 kHz SMPS. Faster recovery minimizes reverse recovery charge (Qrr), decreasing switching losses in the main switch and relaxing snubber design requirements-critical for meeting CISPR-25 Class 5 in automotive power modules.
HERAF803GH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Taiwan Semiconductor Corporation
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 8 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 10 µA @ 200 V
- Capacitance @ Vr, F:
- 80pF @ 4V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- ITO-220AC
- Operating Temperature - Junction:
- -55°C ~ 150°C
HERAF803GH FAQ
1.How can I place an order for HERAF803GH through Aetrix?
Please submit a Request for Quotation (RFQ) for HERAF803GH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for HERAF803GH reliable?
The price and inventory of HERAF803GH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for HERAF803GH is usually 5 days.
3.What payment methods are accepted for HERAF803GH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for HERAF803GH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for HERAF803GH?
HERAF803GH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your HERAF803GH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for HERAF803GH?
For technical support, including HERAF803GH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your HERAF803GH requirements.
6.How does Aetrix verify that HERAF803GH is sourced from the original manufacturer or authorized distributors?
All HERAF803GH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that HERAF803GH meets industry standards.
7.What is the process for return or replacement of HERAF803GH?
All HERAF803GH units undergo pre-shipment inspection (PSI). If there is an issue with HERAF803GH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The HERAF803GH part is unused and in its original packaging.
Return procedure for HERAF803GH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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