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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
BSS123L6327HTSA1 MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies	5,825	RFQ	Datasheet	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	1.8V @ 50µA	2.67 nC @ 10 V	±20V	69 pF @ 25 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT23
BSS123L6433HTMA1 MOSFET N-CH 100V 170MA SOT23-3 Infineon Technologies	6,353	RFQ	Datasheet	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	170mA (Ta)	4.5V, 10V	6Ohm @ 170mA, 10V	1.8V @ 50µA	2.67 nC @ 10 V	±20V	69 pF @ 25 V	-	360mW (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT23
IPU80R3K3P7AKMA1 MOSFET N-CH 800V 1.9A TO251-3 Infineon Technologies	7,085	RFQ	Datasheet	CoolMOS™ P7	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800 V	1.9A (Tc)	10V	3.3Ohm @ 590mA, 10V	3.5V @ 30µA	5.8 nC @ 10 V	±20V	120 pF @ 500 V	-	18W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO251-3
BSP297 E6327 MOSFET N-CH 200V 660MA SOT223-4 Infineon Technologies	4,989	RFQ	Datasheet	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	660mA (Ta)	4.5V, 10V	1.8Ohm @ 660mA, 10V	1.8V @ 400µA	16.1 nC @ 10 V	±20V	357 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-4
IRF7534D1PBF MOSFET P-CH 20V 4.3A MICRO8 Infineon Technologies	9,849	RFQ	Datasheet	FETKY™	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	20 V	4.3A (Ta)	2.5V, 4.5V	55mOhm @ 4.3A, 4.5V	1.2V @ 250µA	15 nC @ 5 V	±12V	1066 pF @ 10 V	Schottky Diode (Isolated)	1.25W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro8™
BSS87E6327 MOSFET N-CH 240V 260MA SOT89-4 Infineon Technologies	5,424	RFQ	Datasheet	SIPMOS®	TO-243AA	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	240 V	260mA (Ta)	4.5V, 10V	6Ohm @ 260mA, 10V	1.8V @ 108µA	5.5 nC @ 10 V	±20V	97 pF @ 25 V	-	1W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT89-4-2
IRFR3911TRLPBF MOSFET N-CH 100V 14A DPAK Infineon Technologies	7,819	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	14A (Tc)	10V	115mOhm @ 8.4A, 10V	4V @ 250µA	32 nC @ 10 V	±20V	740 pF @ 25 V	-	56W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IPD06P005NATMA1 MOSFET P-CH 60V 6.5A TO252-3 Infineon Technologies	3,659	RFQ	Datasheet	OptiMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	6.5A (Tc)	10V	250mOhm @ 6.5A, 10V	4V @ 270µA	10.6 nC @ 10 V	±20V	420 pF @ 30 V	-	28W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO252-3
ISZ062N06NM6ATMA1 TRENCH 40<-<100V Infineon Technologies	7,248	RFQ	-	-	-	Tape & Reel (TR)	Discontinued at Digi-Key	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRLMS4502TR MOSFET P-CH 12V 5.5A MICRO6 Infineon Technologies	2,852	RFQ	Datasheet	HEXFET®	SOT-23-6	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	12 V	5.5A (Ta)	2.5V, 4.5V	42mOhm @ 5.5A, 4.5V	600mV @ 250µA (Min)	33 nC @ 5 V	±12V	1820 pF @ 10 V	-	1.7W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	Micro6™(TSOP-6)

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