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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR3911TRLPBF

Name: IRFR3911TRLPBF
Brand: Infineon Technologies
SKU: IRFR3911TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR3911TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR3911TRLPBF.pdf

Description:: MOSFET N-CH 100V 14A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR3911TRLPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 14A N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, featuring 0.115Ω R_DS(on) at V_GS = 10V and optimized for high-frequency DC-DC converters, SMPS primary-side switching, and industrial motor control where low conduction loss and fast switching are critical.

For engineers reviewing the IRFR3911TRLPBF datasheet, IRFR3911TRLPBF pinout, IRFR3911TRLPBF application, or IRFR3911TRLPBF equivalent, key selection criteria include its 7.1 V/ns diode recovery dv/dt rating, 21–32 nC total gate charge, 130 pF effective output capacitance (C_oss,eff), avalanche energy rating of 68 mJ, and thermal resistance of 2.7°C/W junction-to-case - all verified under TJ = 25°C per IRF PD-95373A.

Technical Context

This HEXFET device employs planar vertical DMOS structure with fully characterized dynamic parameters including C_iss = 740 pF, C_oss = 110 pF (V_DS = 25V), and C_rss = 18 pF, enabling accurate snubberless flyback and resonant LLC design. Its gate threshold voltage (2.0–4.0 V) and forward transconductance (9.6 S) support robust drive margin in 5V/10V gate logic systems.

The integrated body diode exhibits V_SD = 1.3 V at I_S = 8.4A and T_J = 25°C, with t_rr = 86 ns and Q_rr = 290 nC under di/dt = 100 A/µs - critical for synchronous rectification and freewheeling in buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - maximum blocking voltage before avalanche; suitable for 48V input bus designs with 2× safety margin
R_DS(on) max	0.115 Ω @ V_GS = 10V, I_D = 8.4A - determines conduction loss (P_cond ≈ I²R) in continuous conduction mode
I_D cont @ T_C = 25°C	14 A - steady-state current capability with heatsink; derates to 9.5 A at 100°C case temperature
Q_g typ/max	21/32 nC - defines gate driver power requirement and switching speed trade-off in hard-switched topologies
E_AS	68 mJ - unclamped inductive avalanche energy rating; enables robust operation during transient overloads
R_θJC	2.7 °C/W - junction-to-case thermal resistance; allows direct thermal interface to PCB copper or heatsink without isolation pad penalty
t_rr	86 ns - body diode reverse recovery time; impacts shoot-through risk and EMI in half-bridge configurations

Pinout & Package

IRFR3911TRLPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in standard D-Pak layout: Gate (left), Drain (center pad), Source (right).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10V logic-level signal; requires <21 nC charge to fully enhance; Miller plateau occurs near 4.5–5.5V
Drain (D)	High-side power terminal	Connected to PCB copper pour for heat dissipation; electrically tied to exposed metal tab; carries full load current
Source (S)	Reference node / return path	Common reference for gate drive and current sensing; forms low-inductance loop with gate driver ground

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	6.6–9.9 nC - reduces Miller-induced turn-off delay and improves hard-switching efficiency above 100 kHz
Fully characterized C_oss,eff	130 pF - enables precise calculation of resonant timing and zero-voltage switching (ZVS) conditions
Lead-free (PbF) construction	RoHS-compliant D-Pak with matte tin plating - eliminates solder joint reliability concerns in reflow profiles up to 300°C (10 s)
Enhanced diode recovery dv/dt	7.1 V/ns - suppresses parasitic turn-on during high di/dt commutation, reducing need for external gate clamping
Avalanche-rated	68 mJ single-pulse E_AS - supports reliable operation in inductive load switching without external snubbers

Applications

Server PSU Primary Switch

Industrial DC-DC Converter

Use Scenario: High-efficiency 48V-to-12V isolated DC-DC converter in 1U server power supply operating at 300 kHz.

IC Role / Device Role / Timing Role: Primary-side switch in active-clamp forward topology; handles 14A peak drain current with 100V blocking.

Use Value: Low R_DS(on) minimizes conduction loss; 21 nC Q_g enables efficient 300 kHz operation with standard 1A gate drivers.

Use Scenario: 24V input, 5V/20A output non-isolated buck converter for PLC I/O module power rail.

IC Role / Device Role / Timing Role: Synchronous high-side FET; switched by integrated controller with 100 ns dead-time control.

Use Value: 86 ns t_rr and 290 nC Q_rr reduce cross-conduction loss; 1.3 V V_SD lowers body diode conduction penalty during light load.

Motor Drive Half-Bridge

Telecom Rectifier Module

Use Scenario: 24V BLDC motor driver stage delivering 10A RMS phase current with PWM frequency of 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase half-bridge; conducts continuous 9.5A at 100°C case temperature.

Use Value: 2.7°C/W R_θJC allows direct mounting to aluminum heatsink; 68 mJ E_AS withstands inductive kickback during emergency stop.

Use Scenario: -48V telecom rectifier output stage with OR-ing function and hot-swap protection.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to downstream 48V distribution bus.

Use Value: 0.115Ω R_DS(on) limits voltage drop to <1.2V at 10A; 100V V_DSS accommodates surge transients per GR-1089.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK100ZFP	100V, 14A, R_DS(on) = 0.12Ω, Q_g = 42 nC, TO-220FP package	Higher gate charge increases driver loss; through-hole mounting limits high-frequency layout density	Preferred for cost-sensitive, lower-frequency (<100 kHz) designs where thermal mass outweighs switching speed needs
IXTP14N10P	100V, 14A, R_DS(on) = 0.11Ω, Q_g = 25 nC, TO-220 package	Similar R_DS(on) but higher Q_g; no specified avalanche rating; lacks C_oss,eff characterization	Acceptable for non-avalanche-critical applications; requires additional snubber if used in inductive switching

Compared with STP14NK100ZFP and IXTP14N10P, IRFR3911TRLPBF offers superior high-frequency performance due to lower Q_g, validated C_oss,eff, and guaranteed 68 mJ avalanche capability - making it optimal for compact, high-efficiency SMPS where thermal and switching losses must both be minimized.

Availability

IRFR3911TRLPBF is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, motor drive half-bridges, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for IRFR3911TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and wide-bandgap technologies.

The IRFR3911TRLPBF belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3911TRLPBF supports 9.5 A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 14 A at 25°C using the 0.37 W/°C thermal factor and 56 W power dissipation limit.

Does this MOSFET require a gate resistor for safe operation?

Yes - a gate resistor (typically 5–22 Ω) is required to control dV/dt and prevent oscillation during switching. The datasheet specifies switching times (e.g., t_d(off) = 52 ns) with R_G = 22 Ω, confirming that gate resistance directly affects turn-off speed and EMI generation.

Is the body diode suitable for synchronous rectification?

No - while the body diode has characterized t_rr = 86 ns and Q_rr = 290 nC, its V_SD = 1.3 V at 8.4A is significantly higher than dedicated Schottky or GaN sync-FETs. It is intended for freewheeling or clamping, not high-efficiency synchronous rectification.

Can IRFR3911TRLPBF be used in avalanche mode intentionally?

Yes - its 68 mJ single-pulse avalanche energy rating (E_AS) is tested and guaranteed per JEDEC JESD24-11. However, repetitive avalanche (EAR = 5.6 µJ) is extremely limited; intentional repeated avalanche operation is not recommended without detailed thermal modeling and derating.

IRFR3911TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 115mOhm @ 8.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR3911TRLPBF FAQ

1.How can I place an order for IRFR3911TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR3911TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR3911TRLPBF reliable?

The price and inventory of IRFR3911TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR3911TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR3911TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR3911TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR3911TRLPBF?

IRFR3911TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR3911TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR3911TRLPBF?

For technical support, including IRFR3911TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR3911TRLPBF requirements.

6.How does Aetrix verify that IRFR3911TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR3911TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR3911TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR3911TRLPBF?

All IRFR3911TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR3911TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR3911TRLPBF part is unused and in its original packaging.

Return procedure for IRFR3911TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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