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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS123L6327HTSA1

Name: BSS123L6327HTSA1
Brand: Infineon Technologies
SKU: BSS123L6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS123L6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS123L6327HTSA1.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

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Product details

Overview

BSS123L6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS small-signal MOSFET with 100 V V_DS, 0.17 A continuous drain current, and 6 Ω R_DS(on) at V_GS = 10 V. It operates as a low-side load switch in battery-powered sensor interfaces and LED drivers requiring fast turn-on at 3.3 V/5 V logic levels.

For engineers reviewing the BSS123L6327HTSA1 datasheet, BSS123L6327HTSA1 pinout, BSS123L6327HTSA1 application, or BSS123L6327HTSA1 equivalent, key selection criteria include logic-level gate threshold (0.8–2.0 V), thermal resistance (≤350 K/W), and SOT-23 package compatibility with space-constrained PCB layouts.

Technical Context

This discrete MOSFET uses silicon-based SIPMOS technology optimized for low gate charge and fast switching in DC-DC bias rails and signal-path switching. Its logic-level V_GS(th) enables direct drive from microcontroller GPIOs without level-shifting circuitry.

The device integrates a built-in body diode with 0.85–1.3 V forward voltage at 0.34 A, supporting reverse-current protection in unidirectional power paths. Thermal derating follows a defined P_tot vs. T_A curve, with full 0.36 W dissipation only at T_A ≤ 25 °C on standard FR-4.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 24 V industrial bus and 48 V PoE auxiliary rails without breakdown risk
I_D (continuous)	0.17 A at T_A = 25 °C - suitable for low-power peripheral switching (e.g., I²C pull-up enable, sensor bias control)
R_DS(on)	6 Ω max at V_GS = 10 V - delivers <100 mW conduction loss at 0.1 A, enabling thermally stable operation in SOT-23
V_GS(th)	0.8–2.0 V - ensures reliable turn-on with 3.3 V MCU outputs and margin against noise-induced false triggering
C_iss	65–85 pF - limits gate drive current demand and enables clean 5–8 ns turn-on with 50 Ω source impedance
T_j range	−55 to +150 °C - qualified for automotive under-hood and industrial ambient environments
P_tot	0.36 W at T_A = 25 °C - requires thermal relief pads or airflow for sustained >0.1 A loads above 40 °C ambient

Pinout & Package

SOT-23 (TO-236) 3-pin surface-mount package with gull-wing leads; standardized footprint compatible with automated placement and reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current path output terminal	Connected to load side of switched rail; requires thermal pad connection for >0.1 A continuous use
Pin 2 (Source)	Reference node for gate control and current return	Typically tied to ground or low-side return path; forms common reference for V_GS measurement
Pin 3 (Gate)	Control input for channel conduction	High-impedance node; requires series resistor (10–100 Ω) to suppress ringing during fast edge transitions

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for external level shifters in 3.3 V systems
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~12 % from −55 °C to +150 °C, ensuring predictable conduction loss across operating range
Fast switching speed	Turn-on delay <8 ns and rise time <8 ns at 0.28 A load enable high-frequency PWM dimming and burst-mode control
Integrated body diode	Forward voltage ≤1.3 V at 0.34 A allows safe freewheeling in inductive load circuits without external diode
ESD robustness	HBM Class 1 rating (≥2 kV) provides handling safety during manual assembly and board test

Applications

LED Driver Control

Microcontroller I/O Expansion

Use Scenario: Driving 20 mA indicator LEDs from 3.3 V MCU GPIO pins with PWM brightness control.

IC Role / Device Role / Timing Role: Low-side switch enabling precise current sourcing through LED anode-to-V_CC configuration.

Use Value: Eliminates need for external level shifter; R_DS(on) <6 Ω ensures <10 mW power loss per LED at full brightness.

Use Scenario: Enabling/disabling analog sensor bias rails (e.g., temperature, humidity) to reduce system standby current.

IC Role / Device Role / Timing Role: Power-gating transistor controlled by MCU wake-up interrupt to isolate sensor supply.

Use Value: V_GS(th) ≤2.0 V guarantees full turn-on with 3.3 V GPIO; leakage <10 nA preserves battery life in sleep mode.

USB Port Power Switching

Industrial Sensor Interface

Use Scenario: Isolating downstream USB peripherals during hot-plug detection or fault conditions in embedded hosts.

IC Role / Device Role / Timing Role: Load switch managing VBUS path with fast turn-off (<16 ns fall time) to prevent backfeed during disconnect.

Use Value: C_oss ≤15 pF minimizes capacitive coupling into data lines; 100 V rating withstands USB transient surges.

Use Scenario: Switching 24 V field power to 4–20 mA loop-powered sensors in PLC I/O modules.

IC Role / Device Role / Timing Role: High-side or low-side switch controlling excitation voltage to sensor bridge elements.

Use Value: T_j up to +150 °C supports operation near industrial heat sources; R_DS(on) stability ensures consistent sensor bias over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 3.5 Ω @ V_GS = 4.5 V (vs. 6 Ω); higher gate charge (2.1 nC vs. ~1.3 nC)	Better conduction efficiency at 0.1–0.2 A but slower switching in PWM applications	Prefer for static load switching where thermal margin is critical and speed is secondary
2N7002K-T1-GE3	V_DS = 60 V (vs. 100 V); R_DS(on) = 3 Ω @ V_GS = 10 V; lower cost but reduced voltage headroom	Not suitable for 48 V or 24 V bus isolation; limited to 5–12 V domains	Select only when system voltage remains ≤20 V and cost sensitivity outweighs voltage margin needs

Compared with DMN2004LK-7 and 2N7002K-T1-GE3, BSS123L6327HTSA1 uniquely balances 100 V capability, logic-level drive, and SOT-23 thermal performance-making it optimal for mixed-voltage industrial interfaces where both voltage headroom and MCU compatibility are required.

Availability

BSS123L6327HTSA1 is available at Aetrix Electronics and suitable for LED driver control, microcontroller I/O expansion, USB port power switching, and industrial sensor interface applications requiring stable component supply and long-term production continuity.

Supply support for BSS123L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete power devices with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

The SIPMOS® small-signal transistor product line targets space-constrained, logic-driven switching applications in industrial automation, consumer electronics, and automotive body electronics-emphasizing low gate threshold, fast response, and robust thermal behavior in SOT packages.

FAQ

What is the maximum continuous drain current for BSS123L6327HTSA1 at 85 °C ambient?

At T_A = 85 °C, the maximum continuous drain current is approximately 0.10 A, derived from the ID vs. TA derating curve in the datasheet. This reflects thermal limitation of the SOT-23 package, not device intrinsic capability. Operation above this value requires thermal relief design or forced airflow to maintain junction temperature below 150 °C.

Can BSS123L6327HTSA1 be used in high-frequency PWM applications above 1 MHz?

Yes, its typical turn-on delay (5–8 ns) and rise time (5–8 ns) support PWM frequencies up to 2–3 MHz in low-duty-cycle, low-current configurations. However, gate drive strength and layout parasitics become dominant above 500 kHz; for >1 MHz operation, verify gate resistor selection and minimize trace inductance to avoid oscillation.

Is the body diode in BSS123L6327HTSA1 rated for continuous reverse recovery?

No-the integrated body diode is rated for continuous forward current up to 0.17 A and pulsed current up to 0.68 A, but it is not characterized for reverse recovery time or ruggedness in hard-switched inductive flyback. Use only in unidirectional current paths or with external snubbers if subjected to repetitive reverse recovery stress.

Does BSS123L6327HTSA1 meet AEC-Q101 for automotive use?

Yes, BSS123L6327HTSA1 is qualified to AEC-Q101 Rev D for stress testing including HTGB, HTRB, and ESD. Its −55 to +150 °C operating range and robust construction make it suitable for under-dash and engine-compartment-adjacent applications, provided PCB thermal design meets specified derating curves.

BSS123L6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 69 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS123L6327HTSA1 FAQ

1.How can I place an order for BSS123L6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS123L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS123L6327HTSA1 reliable?

The price and inventory of BSS123L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS123L6327HTSA1 is usually 5 days.

3.What payment methods are accepted for BSS123L6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS123L6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS123L6327HTSA1?

BSS123L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS123L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS123L6327HTSA1?

For technical support, including BSS123L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS123L6327HTSA1 requirements.

6.How does Aetrix verify that BSS123L6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All BSS123L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS123L6327HTSA1 meets industry standards.

7.What is the process for return or replacement of BSS123L6327HTSA1?

All BSS123L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS123L6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS123L6327HTSA1 part is unused and in its original packaging.

Return procedure for BSS123L6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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