Infineon Technologies IPD06P005NATMA1

Overview

IPD06P005NATMA1 from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for -60 V drain-source voltage, 250 mΩ maximum R_DS(on) at -10 V gate drive, and -6.5 A continuous drain current at T_C = 25 °C. It features 100% avalanche testing, Pb-free RoHS-compliant plating, and halogen-free construction per IEC61249-2-21, deployed in industrial DC-DC converter high-side switches.

For engineers reviewing the IPD06P005NATMA1 datasheet, IPD06P005NATMA1 pinout, IPD06P005NATMA1 application, or IPD06P005NATMA1 equivalent, key selection criteria include verified -60 V V_DS, 250 mΩ R_DS(on) at -10 V, -6.5 A I_D, 75 mJ single-pulse EAS, and D-PAK (PG-TO252-3) thermal performance with 5.3 °C/W R_thJC.

Technical Context

This OptiMOS™ power transistor operates as a normally-off P-channel switch with a gate threshold voltage of -2.1 V to -4.0 V and exhibits low gate charge (Q_g = 10.6 nC) and fast switching (t_d(on) = 5 ns, t_f = 5 ns) under -30 V V_DD and -10 V V_GS. Its reverse diode supports -6.5 A continuous forward current with V_SD = -0.9 to -1.2 V at T_j = 25 °C.

The device is qualified for industrial applications per JEDEC47/20/22, with thermal resistance R_thJC = 5.3 °C/W on a 6 cm² PCB copper area and R_thJA = 75 °C/W in still air. Safe operating area (SOA) is defined up to 100 µs pulse width at -60 V and -6.5 A.

Key Specifications

Pinout & Package

IPD06P005NATMA1 uses the PG-TO252-3 (D-PAK) package with exposed drain tab for thermal conduction. The drain tab is electrically connected to Pin 2 (Drain), while Pin 1 is Gate and Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Compared with IRF9540NPBF and DMG2305UVT-7, IPD06P005NATMA1 delivers optimal balance of -60 V rating, 250 mΩ R_DS(on), and 10.6 nC Q_g for industrial 24–48 V high-side switching-offering superior thermal efficiency and avalanche ruggedness without sacrificing layout flexibility.

Availability

IPD06P005NATMA1 is available at Aetrix Electronics and suitable for industrial DC-DC converters, automotive body control modules, and smart power distribution units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IPD06P005NATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOS™ P-channel power transistor product line, engineered for high-efficiency, high-reliability high-side switching in industrial and automotive power systems where avalanche robustness and thermal performance are critical.

FAQ

What is the maximum junction temperature for continuous operation?

The IPD06P005NATMA1 has a maximum junction temperature (T_j) of 175 °C, validated per IEC climatic category 55/175/56. Continuous operation at this limit requires thermal design ensuring R_thJC ≤ 5.3 °C/W and adequate PCB copper area (6 cm²) for drain tab conduction.

Is the drain tab electrically isolated from the package body?

No-the drain tab is electrically connected to Pin 2 (Drain) and forms the primary current-carrying and thermal path. It must be mounted to an insulated heatsink or grounded plane with appropriate dielectric isolation if system grounding requires separation from the drain potential.

Does this MOSFET require a gate resistor for safe operation?

Yes-a gate resistor (typically 10–100 Ω) is recommended to dampen ringing and control dV/dt during switching. The datasheet specifies test conditions using R_G,ext = 1.6 Ω for timing measurements; actual value depends on driver strength and EMI requirements.

Can IPD06P005NATMA1 replace N-channel MOSFETs in high-side configurations?

No-it is a P-channel device designed specifically for high-side use without level-shifting circuitry. Replacing an N-channel high-side switch would require redesigning gate drive topology, as N-ch devices need gate voltage above source, whereas this P-ch part turns on with gate below source.