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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSS123L6433HTMA1

Name: BSS123L6433HTMA1
Brand: Infineon Technologies
SKU: BSS123L6433HTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSS123L6433HTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: BSS123L6433HTMA1.pdf

Description:: MOSFET N-CH 100V 170MA SOT23-3

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Product details

Overview

BSS123L6433HTMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS small-signal MOSFET with V_DS = 100 V, R_DS(on) ≤ 6 Ω at V_GS = 10 V, and I_D = 0.17 A continuous - used in low-power load switching, LED drivers, and level-shifted gate control circuits where 3.3 V/5 V microcontroller drive capability is required.

For engineers reviewing the BSS123L6433HTMA1 datasheet, BSS123L6433HTMA1 pinout, BSS123L6433HTMA1 application, or BSS123L6433HTMA1 equivalent, key selection criteria include verified logic-level gate threshold (V_GS(th) = 0.8–2.0 V), guaranteed R_DS(on) at 4.5 V drive, thermal resistance (R_thJA ≤ 350 K/W), and SOT-23 package compatibility with automated PCB assembly.

Technical Context

This discrete power MOSFET operates in enhancement mode with a silicon-based SIPMOS structure optimized for fast switching and low gate charge. Its logic-level gate enables direct drive from 3.3 V or 5 V digital outputs without external level shifting.

It integrates a built-in body diode with V_SD = 0.85–1.3 V at I_F = 0.34 A and supports pulsed drain current up to 0.68 A. Thermal operation spans –55 °C to +150 °C, with R_thJSR ≤ 285 K/W when mounted on specified aluminum substrate.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports DC bus switching up to 80 V with 20 % safety margin
R_DS(on) @ V_GS = 10 V	≤ 6 Ω - ensures < 17 mW conduction loss at 0.17 A nominal load
V_GS(th)	0.8–2.0 V - guarantees turn-on with standard logic-level MCU GPIOs
I_D (continuous)	0.17 A @ T_A = 28 °C - suitable for signal-level and low-current power switching
C_iss	65–85 pF - enables nanosecond-scale switching with minimal gate drive power
P_tot	0.36 W @ T_A = 25 °C - defines maximum dissipation without heatsink in SOT-23
V_SD	0.85–1.3 V @ I_F = 0.34 A - specifies forward drop of integrated body diode for flyback paths

Pinout & Package

SOT-23 (TO-236) surface-mount plastic package with gull-wing leads; compact 2.9 mm × 1.3 mm footprint, 1.0 mm height, and JEDEC-compliant pin assignment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; logic-level compatible input requiring ≤ 50 nA leakage at ±20 V
Pin 2 (S)	Source	Reference node for gate drive and current return path; tied to ground or low-side common
Pin 3 (D)	Drain	High-side switched output; connects to load or supply rail; handles 100 V blocking

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 2.0 V - eliminates need for gate driver ICs in 3.3 V systems
Low R_DS(on) at 4.5 V	≤ 10 Ω - maintains efficiency in battery-powered applications with limited supply headroom
ESD robustness	HBM Class 1 (≥ 2 kV) - withstands handling without additional protection circuitry
Thermal stability	R_thJA ≤ 350 K/W - enables reliable operation in sealed enclosures up to +85 °C ambient

Applications

LED Driver Switching

Microcontroller I/O Expansion

Use Scenario: Driving 20 mA indicator LEDs from STM32 GPIO pins with 3.3 V logic levels.

IC Role / Device Role / Timing Role: Low-side switch controlling LED current path to ground.

Use Value: Eliminates external level shifter; R_DS(on) < 6 Ω limits voltage drop to < 0.12 V at 20 mA.

Use Scenario: Expanding digital output count using shift registers or port expanders.

IC Role / Device Role / Timing Role: Signal-level load switch isolating downstream peripherals from MCU I/O lines.

Use Value: Gate threshold ≤ 2.0 V ensures full turn-on with 3.3 V CMOS logic; C_iss < 85 pF minimizes propagation delay.

Reverse Polarity Protection

Low-Power Relay Driver

Use Scenario: Protecting 5 V USB-powered modules against incorrect connector insertion.

IC Role / Device Role / Timing Role: High-side pass element in ideal diode configuration.

Use Value: Body diode forward voltage < 1.3 V reduces dropout vs. Schottky; V_DS = 100 V accommodates transient surges.

Use Scenario: Driving 12 V, 40 mA coil relays from Raspberry Pi GPIOs via optocoupler-isolated interface.

IC Role / Device Role / Timing Role: Final-stage low-side switch enabling relay coil energization.

Use Value: I_D = 0.17 A exceeds relay hold current; R_DS(on) < 6 Ω limits self-heating to < 17 mW during sustained activation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LK-7	R_DS(on) = 3.5 Ω @ V_GS = 4.5 V; higher gate charge (Q_g = 2.1 nC)	Better conduction efficiency but slower switching in high-frequency PWM	Preferred for static switching where lower loss outweighs speed penalty
2N7002K-T1-GE3	V_DS = 60 V; R_DS(on) = 3 Ω @ V_GS = 4.5 V; lower voltage rating	Not suitable for 80–100 V bus applications; better for 5–24 V systems	Select only when operating voltage remains ≤ 48 V and lower R_DS(on) is critical

Compared with DMN2004LK-7 and 2N7002K-T1-GE3, BSS123L6433HTMA1 uniquely balances 100 V rating, logic-level gate, and SOT-23 footprint - making it optimal for space-constrained industrial sensors and automotive body electronics where voltage margin and MCU compatibility are jointly critical.

Availability

BSS123L6433HTMA1 is available at Aetrix Electronics and suitable for LED driver circuits, microcontroller I/O expansion, reverse polarity protection, and low-power relay drivers requiring stable component supply across production lifecycles.

Supply support for BSS123L6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

BSS123L6433HTMA1 belongs to the SIPMOS® small-signal transistor product line, engineered for high-reliability, low-voltage logic-driven switching in space-constrained industrial and automotive subsystems.

FAQ

Is BSS123L6433HTMA1 pin-compatible with standard SOT-23 N-channel MOSFETs?

Yes - it uses standard SOT-23 pinout (G-S-D, left-to-right when marking side faces up), matching industry conventions including 2N7002, DMN2004LK, and FDN304P. No adapter or layout change is needed for drop-in replacement within voltage and current limits.

What is the maximum safe operating temperature for continuous use?

The device supports junction temperatures from –55 °C to +150 °C. For continuous operation at full rated current (0.17 A), ambient temperature must remain ≤ 28 °C unless board-level thermal relief (e.g., copper pour, airflow) reduces effective R_thJA.

Does BSS123L6433HTMA1 include integrated ESD protection?

Yes - it meets HBM Class 1 per MIL-STD-883 (≥ 2 kV), verified by Infineon's qualification testing. No external TVS diode is required for standard handling and board-level ESD immunity in typical industrial environments.

Can this MOSFET be used in linear (analog) regulation mode?

No - it is characterized and qualified only for switching operation. The Safe Operating Area (SOA) graph shows limited linear region capability; sustained operation in the linear zone risks thermal runaway due to positive temperature coefficient of R_DS(on).

BSS123L6433HTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6Ohm @ 170mA, 10V

Vgs(th) (Max) @ Id:: 1.8V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 2.67 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 69 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23

BSS123L6433HTMA1 FAQ

1.How can I place an order for BSS123L6433HTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSS123L6433HTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSS123L6433HTMA1 reliable?

The price and inventory of BSS123L6433HTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS123L6433HTMA1 is usually 5 days.

3.What payment methods are accepted for BSS123L6433HTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS123L6433HTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSS123L6433HTMA1?

BSS123L6433HTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSS123L6433HTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSS123L6433HTMA1?

For technical support, including BSS123L6433HTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS123L6433HTMA1 requirements.

6.How does Aetrix verify that BSS123L6433HTMA1 is sourced from the original manufacturer or authorized distributors?

All BSS123L6433HTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS123L6433HTMA1 meets industry standards.

7.What is the process for return or replacement of BSS123L6433HTMA1?

All BSS123L6433HTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSS123L6433HTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSS123L6433HTMA1 part is unused and in its original packaging.

Return procedure for BSS123L6433HTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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