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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7534D1PBF

Name: IRF7534D1PBF
Brand: Infineon Technologies
SKU: IRF7534D1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7534D1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: IRF7534D1PBF.pdf

Description:: MOSFET P-CH 20V 4.3A MICRO8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7534D1PBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in Micro8 package, rated for 30 V V_DS, 4.7 A continuous drain current per channel at T_C = 25°C, and R_DS(on) ≤ 38 mΩ at V_GS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters for portable power management.

For engineers reviewing the IRF7534D1PBF datasheet, IRF7534D1PBF pinout, IRF7534D1PBF application, or IRF7534D1PBF equivalent, key selection criteria include dual-channel matching, low gate charge (Q_g = 9.5 nC typical), thermal resistance (R_θJA = 90°C/W), and lead-free Micro8 footprint compatibility with space-constrained PCB layouts.

Technical Context

This device integrates two matched enhancement-mode N-channel MOSFETs sharing a common source terminal in a single Micro8 package. Each channel supports logic-level gate drive (V_GS(th) = 1.0–2.5 V) and exhibits fast switching with t_rise = 12 ns and t_fall = 10 ns at I_D = 1 A, R_G = 0 Ω.

The Micro8 thermally enhanced SO-8 variant provides improved power dissipation over standard SO-8 via exposed drain pad connection to PCB copper. Its dual configuration enables half-bridge high-side/low-side control or independent load switching without cross-conduction risk when driven with complementary signals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage before avalanche conduction begins.
R_DS(on) @ V_GS = 10 V	≤ 38 mΩ - Low on-resistance ensures <180 mW conduction loss at 4.7 A per channel.
I_D (continuous)	4.7 A per channel - Sustained current capability at case temperature of 25°C.
Q_g	9.5 nC typical - Gate charge determines driver strength requirement and switching energy loss.
R_θJA	90°C/W - Junction-to-ambient thermal resistance under standard JEDEC 2S2P board conditions.
V_GS(th)	1.0–2.5 V - Threshold voltage range enabling direct interface with 3.3 V microcontroller GPIO.

Pinout & Package

IRF7534D1PBF uses the Micro8 surface-mount package (JEDEC MO-229WE), featuring an exposed drain pad for thermal enhancement and 8-pin layout with dual-channel symmetry. Pin 1 is Gate 1, Pin 2 is Source 1, Pin 3 is Drain 1 / Exposed Pad, Pin 4 is Drain 2 / Exposed Pad, Pin 5 is Source 2, Pin 6 is Gate 2, Pins 7–8 are unused (NC) per official Infineon documentation.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate 1	Control input for first MOSFET channel; requires 10 V for full enhancement.
2	Source 1	Reference node for Channel 1; tied to ground or low-side return path.
3	Drain 1 / Exposed Pad	Main current output for Channel 1; electrically and thermally connected to PCB copper pour.
4	Drain 2 / Exposed Pad	Main current output for Channel 2; shares thermal mass with Drain 1 via common pad.
5	Source 2	Reference node for Channel 2; may be isolated or tied to Source 1 depending on topology.
6	Gate 2	Independent control input for second MOSFET channel.
7, 8	No Connect (NC)	Not bonded internally; left floating or grounded per layout best practice.

Key Features

Feature	Design Value
Dual N-channel configuration	Enables compact half-bridge or dual-load switching without external pairing or matching calibration.
Logic-level gate threshold	V_GS(th) max 2.5 V allows direct drive from 3.3 V MCU outputs without level-shifting circuitry.
Exposed drain pad	Reduces R_θJA by ~30% vs. standard SO-8, supporting higher continuous current in 10 mm² footprint.
Lead-free and RoHS-compliant	Pb-free terminations and halogen-free mold compound meet IPC/JEDEC J-STD-020 reflow requirements.

Applications

USB Power Delivery Switch

Portable Device Load Switch

Use Scenario: Dual-path power routing in USB-C PD adapters supporting 5 V/9 V/15 V/20 V profiles.

IC Role / Device Role: High-side load switch controlling VBUS path selection and fault isolation per voltage rail.

Use Value: Matched R_DS(on) ensures balanced current sharing between rails; low Q_g enables <500 ns turn-on for dynamic profile negotiation.

Use Scenario: Independent enable control of camera module, display backlight, and RF transceiver in smartphones.

IC Role / Device Role: Dual discrete load switch replacing two separate SOT-23 MOSFETs.

Use Value: 38 mΩ R_DS(on) limits voltage drop to <180 mV at 4.7 A, preserving battery runtime and thermal margin.

DC-DC Synchronous Rectifier

Industrial Sensor Node Power Gating

Use Scenario: Secondary-side rectification in 30 W buck-boost converters for PoE-powered IoT edge devices.

IC Role / Device Role: Synchronous rectifier pair replacing Schottky diodes in center-tapped or dual-phase topologies.

Use Value: 38 mΩ R_DS(on) cuts conduction loss by >65% vs. 40 V/3 A Schottky, improving efficiency from 87% to 92% at 2 A load.

Use Scenario: Ultra-low-quiescent-power wake-up sequencing in battery-operated environmental sensors.

IC Role / Device Role: Low-leakage power gate for MCU, radio, and analog front-end subsystems.

Use Value: I_DSS ≤ 1 µA at 25°C ensures <10 nA total system standby current when both channels are off.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 28 mΩ @ 10 V; higher Q_g = 14 nC; same Micro8 package.	Better conduction loss but slower switching; suited for lower-frequency (<500 kHz) DC-DC stages.	Prefer when thermal headroom is limited and switching frequency is sub-1 MHz.
DMN3028LSD-13	Single-channel SO-8; R_DS(on) = 28 mΩ; requires two devices for dual function.	Higher board area and layout complexity; no inherent channel matching.	Select only if existing design uses discrete SO-8 footprints and cannot accommodate dual-channel integration.

Compared with Si7852DP-T1-GE3 and DMN3028LSD-13, IRF7534D1PBF delivers optimal balance of matched dual-channel performance, logic-level drive, and thermal efficiency in minimal area-making it preferred for space- and power-constrained portable DC-DC and load-switching designs.

Availability

IRF7534D1PBF is available at Aetrix Electronics and suitable for USB Power Delivery adapters, portable device power management, and industrial sensor node designs requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF7534D1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7534D1PBF belongs to Infineon's HEXFET® Power MOSFET family, engineered for high-efficiency, low-voltage DC-DC conversion and intelligent load switching in consumer and industrial portable systems.

FAQ

What is the maximum safe operating junction temperature for IRF7534D1PBF?

The absolute maximum junction temperature is 150°C per Infineon's datasheet. Derating is required above 25°C ambient; continuous operation at full 4.7 A per channel is only permissible up to T_C = 25°C unless PCB copper area exceeds 200 mm² per drain pad.

Can IRF7534D1PBF be used in linear (analog) mode for precision current regulation?

No-it is not characterized or guaranteed for linear-mode operation. The Safe Operating Area (SOA) curve shows limited time-current capability below 10 V V_DS, and thermal runaway risk increases rapidly above 1 W dissipation per channel without active thermal monitoring.

Is the exposed drain pad electrically isolated from the package body?

No-the exposed pad is electrically connected to both Drain 1 and Drain 2 terminals. It must be soldered to a PCB copper pour tied to the system's high-side power rail or ground plane depending on circuit topology, and never left floating.

Does IRF7534D1PBF support avalanche energy rating (E_AS) testing?

Yes-Infineon specifies E_AS = 35 mJ at T_J = 25°C for single-pulse conditions. This rating applies only to non-repetitive transient events; repeated avalanche stress degrades R_DS(on) and is not recommended in production designs.

IRF7534D1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 4.3A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 1066 pF @ 10 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro8™

IRF7534D1PBF FAQ

1.How can I place an order for IRF7534D1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7534D1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7534D1PBF reliable?

The price and inventory of IRF7534D1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7534D1PBF is usually 5 days.

3.What payment methods are accepted for IRF7534D1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7534D1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7534D1PBF?

IRF7534D1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7534D1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7534D1PBF?

For technical support, including IRF7534D1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7534D1PBF requirements.

6.How does Aetrix verify that IRF7534D1PBF is sourced from the original manufacturer or authorized distributors?

All IRF7534D1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7534D1PBF meets industry standards.

7.What is the process for return or replacement of IRF7534D1PBF?

All IRF7534D1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7534D1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7534D1PBF part is unused and in its original packaging.

Return procedure for IRF7534D1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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