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Infineon Technologies BSS87E6327
- Part No.:
- BSS87E6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-243AA
- Datasheet:
-
BSS87E6327.pdf
- Description:
- MOSFET N-CH 240V 260MA SOT89-4
- Quantity:
- Payment:
- Shipping:
Inventory:5,424
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Product details
Overview
BSS87E6327 from Infineon Technologies is an N-channel enhancement-mode SIPMOS small-signal transistor in SOT-89 package, rated for 240 V drain-source breakdown voltage, 0.26 A continuous drain current at 25°C, and 3.9–6 Ω RDS(on) at VGS = 10 V. It serves as a logic-level switch in low-power DC-DC converters, LED drivers, and load switching circuits where dv/dt immunity and AEC-Q101 qualification are required.
For engineers reviewing the BSS87E6327 datasheet, BSS87E6327 pinout, BSS87E6327 application, or BSS87E6327 equivalent, key selection criteria include its 6 kV/µs dv/dt rating, 0.8–1.8 V gate threshold voltage, 77.5–97 pF input capacitance, 1.04 A pulsed drain capability, and halogen-free, RoHS-compliant construction.
Technical Context
This device employs a planar SIPMOS structure optimized for fast switching and robust dv/dt immunity. Its logic-level gate drive (VGS(th) max 1.8 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.
Thermal performance is defined by RthJA = 70 K/W on 6 cm² PCB copper area and RthJC = 10 K/W to Pin 2 (drain tab), supporting operation up to Tj = 150°C. The integrated body diode exhibits trr = 53.6–80.4 ns and Qrr = 101–152 nC under specified conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 240 V - supports high-side switching in 192 V bus applications with margin |
| RDS(on) @ VGS=10 V | 3.9–6 Ω - determines conduction loss in 0.26 A load paths |
| ID cont @ 25°C | 0.26 A - defines maximum steady-state current in compact SOT-89 footprint |
| dv/dt rating | 6 kV/µs - ensures reliable operation in noisy inductive switching environments |
| VGS(th) | 0.8–1.8 V - enables full enhancement with standard logic-level MCU outputs |
| trr (body diode) | 53.6–80.4 ns - limits reverse recovery energy in flyback and synchronous rectifier topologies |
| Qg total | 3.7–5.5 nC - sets gate driver strength requirement for <5.5 ns turn-on delay |
Pinout & Package
Package: SOT-89 (TO-243AA), surface-mount, thermally enhanced with exposed drain tab (Pin 2). Pb-free, RoHS-compliant, tape-and-reel packaging (H6327: 1000 pcs/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Reference node for gate control; connects to ground or low-side return path |
| Pin 2 (Drain) | Drain terminal / thermal pad | Main current-carrying path and primary heat dissipation interface to PCB copper |
| Pin 3 (Gate) | Control input | High-impedance MOSFET gate requiring <10 nA leakage; driven by logic-level signal |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive electronics per stress test requirements (HTOL, TC, HTRB) |
| Logic-level gate drive | VGS(th) ≤ 1.8 V ensures full enhancement with 3.3 V/5 V controllers |
| dv/dt immune | Rated 6 kV/µs prevents false turn-on during high-slew transients |
| Halogen-free & RoHS | Complies with IEC61249-2-21 and EU Directive 2011/65/EU |
| Low Qgd/Qg ratio | Qgd = 1.7–2.5 nC / Qg = 3.7–5.5 nC improves switching controllability |
Applications
| Automotive LED Headlamp Driver | Industrial Sensor Power Switch |
|---|---|
Use Scenario: High-reliability on/off control of 12–24 V LED strings in automotive front lighting modules. IC Role / Device Role / Timing Role: Low-side load switch managing up to 0.26 A per channel with AEC-Q101 compliance. Use Value: 6 kV/µs dv/dt rating prevents misfiring during alternator load dump transients; 150°C max junction temperature supports under-hood placement. | Use Scenario: Remote power gating for analog sensors in programmable logic controller (PLC) I/O modules. IC Role / Device Role / Timing Role: Precision-controlled power enable/disconnect for 24 V field sensors with minimal standby leakage. Use Value: IDSS ≤ 0.1 µA at 25°C and ≤100 µA at 150°C ensures stable sensor bias during extended sleep modes. |
| USB-C Power Delivery Load Switch | Low-Power DC-DC Converter High-Side Switch |
Use Scenario: Inrush current limiting and fault isolation in USB-C PD sink applications with 20 V input rails. IC Role / Device Role / Timing Role: Logic-level controlled high-side switch enabling soft-start and overcurrent protection coordination. Use Value: RDS(on) ≤ 6 Ω at 4.5 V gate drive allows efficient operation with USB-C PD controller GPIOs. | Use Scenario: High-side switch in isolated flyback or buck-derived auxiliary supplies for microcontroller subsystems. IC Role / Device Role / Timing Role: Fast-switching, low-Qg transistor driving transformer primary with minimal dead-time loss. Use Value: Qg ≤ 5.5 nC and tr/tf ≤ 5.2/41 ns support >500 kHz switching while maintaining ZVS feasibility. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BSS84E6327 | P-channel, −50 V VDS, higher RDS(on) (10 Ω), complementary topology | Requires high-side gate drive inversion; unsuitable for low-side logic-level direct drive | Select only when P-channel configuration is mandated by circuit architecture |
| DMN2004LK-7 | N-channel, 20 V VDS, lower RDS(on) (2.2 Ω), SOT-23 package, no AEC-Q101 | Limited to ≤20 V systems; lacks dv/dt rating and automotive qualification | Use only in non-automotive, low-voltage (<15 V) consumer applications with space constraints |
Compared with BSS87E6327, BSS84E6327 requires inverted control logic and offers lower voltage rating, while DMN2004LK-7 trades off ruggedness and qualification for lower on-resistance and smaller footprint-neither matches the 240 V, AEC-Q101, and 6 kV/µs dv/dt combination.
Availability
BSS87E6327 is available at Aetrix Electronics and suitable for automotive lighting systems, industrial sensor interfaces, USB-C power delivery modules, and low-power DC-DC converter designs requiring stable component supply across extended product lifecycles.
Supply support for BSS87E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The SIPMOS small-signal transistor product line delivers logic-level, high-voltage MOSFETs engineered for reliability-critical switching in automotive, industrial, and power conversion applications.
FAQ
What is the maximum allowable gate-source voltage for BSS87E6327?
The absolute maximum VGS is ±20 V. Operation beyond this risks irreversible gate oxide damage. For reliable long-term use, gate drive should be limited to 10 V for optimal RDS(on) and 15 V maximum to maintain safety margin against transients, especially in automotive environments with load dump events.
Does BSS87E6327 have an integrated body diode, and what are its key parameters?
Yes, it features a monolithic parasitic body diode with forward current rating of 0.26 A (continuous) and 1.04 A (pulsed). Key parameters include VSD = 0.82–1.2 V at IF = 0.26 A, trr = 53.6–80.4 ns, and Qrr = 101–152 nC under specified test conditions (VR = 120 V, diF/dt = 100 A/µs).
Can BSS87E6327 be used in linear (analog) amplification mode?
No-it is not characterized or optimized for linear operation. The datasheet provides only switching and DC transfer characteristics (e.g., output curves at fixed VGS). Transconductance (gfs) is specified (0.16–0.33 S), but thermal limitations, lack of SOA curves for linear region, and absence of gain flatness or distortion data preclude assured analog amplifier use.
What is the thermal resistance from junction to ambient (RthJA) under standard mounting conditions?
RthJA is 70 K/W when mounted on a 40 mm × 40 mm × 1.5 mm FR4 PCB with 6 cm² copper area connected to Pin 2 (drain tab), vertical orientation, and no forced airflow. This value assumes minimum footprint layout; actual thermal performance depends on PCB copper thickness, layer count, and proximity to other heat sources.
BSS87E6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-243AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 240 V
- Current - Continuous Drain (Id) @ 25°C:
- 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6Ohm @ 260mA, 10V
- Vgs(th) (Max) @ Id:
- 1.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs:
- 5.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 97 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT89-4-2
BSS87E6327 FAQ
1.How can I place an order for BSS87E6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSS87E6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSS87E6327 reliable?
The price and inventory of BSS87E6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSS87E6327 is usually 5 days.
3.What payment methods are accepted for BSS87E6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSS87E6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSS87E6327?
BSS87E6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSS87E6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSS87E6327?
For technical support, including BSS87E6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSS87E6327 requirements.
6.How does Aetrix verify that BSS87E6327 is sourced from the original manufacturer or authorized distributors?
All BSS87E6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSS87E6327 meets industry standards.
7.What is the process for return or replacement of BSS87E6327?
All BSS87E6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSS87E6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSS87E6327 part is unused and in its original packaging.
Return procedure for BSS87E6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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