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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IPA60R280E6XKSA1 MOSFET N-CH 600V 13.8A TO220-FP Infineon Technologies	3,820	RFQ	Datasheet	CoolMOS™	TO-220-3 Full Pack	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600 V	13.8A (Tc)	10V	280mOhm @ 6.5A, 10V	3.5V @ 430µA	43 nC @ 10 V	±20V	950 pF @ 100 V	-	32W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	PG-TO220-FP
IPI47N10S33AKSA1 MOSFET N-CH 100V 47A TO262-3 Infineon Technologies	8,840	RFQ	Datasheet	SIPMOS®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	47A (Tc)	10V	33mOhm @ 33A, 10V	4V @ 2mA	105 nC @ 10 V	±20V	2500 pF @ 25 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO262-3
IPI47N10SL26AKSA1 MOSFET N-CH 100V 47A TO262-3 Infineon Technologies	4,821	RFQ	Datasheet	SIPMOS®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100 V	47A (Tc)	4.5V, 10V	26mOhm @ 33A, 10V	2V @ 2mA	135 nC @ 10 V	±20V	2500 pF @ 25 V	-	175W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO262-3
BSP170PE6327 MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies	2,971	RFQ	Datasheet	SIPMOS®	TO-261-4, TO-261AA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	60 V	1.9A (Ta)	10V	300mOhm @ 1.9A, 10V	4V @ 250µA	14 nC @ 10 V	±20V	410 pF @ 25 V	-	1.8W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-SOT223-4
BSC100N03MSGATMA1 MOSFET N-CH 30V 12A/44A TDSON Infineon Technologies	5,802	RFQ	Datasheet	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	12A (Ta), 44A (Tc)	4.5V, 10V	10mOhm @ 30A, 10V	2V @ 250µA	23 nC @ 10 V	±20V	1700 pF @ 15 V	-	2.5W (Ta), 30W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TDSON-8-5
BSZ0703LSATMA1 MOSFET N-CH 60V 40A TSDSON Infineon Technologies	3,111	RFQ	Datasheet	OptiMOS™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	40A (Tc)	4.5V, 10V	6.5mOhm @ 20A, 10V	2.3V @ 20µA	13 nC @ 4.5 V	±20V	1800 pF @ 30 V	-	46W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	PG-TSDSON-8-26
IRF3707ZCS MOSFET N-CH 30V 59A D2PAK Infineon Technologies	3,208	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	59A (Tc)	4.5V, 10V	9.5mOhm @ 21A, 10V	2.25V @ 250µA	15 nC @ 4.5 V	±20V	1210 pF @ 15 V	-	57W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IQE057N10NM6ATMA1 TRENCH >=100V Infineon Technologies	3,838	RFQ	Datasheet	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI12CN10N G MOSFET N-CH 100V 67A TO262-3 Infineon Technologies	7,569	RFQ	Datasheet	OptiMOS™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	67A (Tc)	10V	12.9mOhm @ 67A, 10V	4V @ 83µA	65 nC @ 10 V	±20V	4320 pF @ 50 V	-	125W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO262-3
BTS247Z E3062A MOSFET N-CH 55V 33A TO263-5 Infineon Technologies	8,333	RFQ	Datasheet	TEMPFET®	TO-263-5, D2PAK (4 Leads + Tab), TO-263BB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	33A (Tc)	4.5V, 10V	18mOhm @ 12A, 10V	2V @ 90µA	90 nC @ 10 V	±20V	1730 pF @ 25 V	Temperature Sensing Diode	120W (Tc)	-40°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-5-2

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