Infineon Technologies IPI47N10SL26AKSA1

Overview

IPI47N10SL26AKSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level SIPMOS™ power MOSFET in PG-TO262-3-1 package, rated for 100 V V_DS, 47 A continuous drain current at T_C = 25 °C, and 26 mΩ R_DS(on) at V_GS = 10 V. It supports high-reliability industrial motor drives and DC-DC converters requiring avalanche-rated operation up to 175 °C junction temperature.

For engineers reviewing the IPI47N10SL26AKSA1 datasheet, IPI47N10SL26AKSA1 pinout, IPI47N10SL26AKSA1 application, or IPI47N10SL26AKSA1 equivalent, key selection criteria include its 400 mJ single-pulse avalanche energy, 6 kV/µs dv/dt rating, 1.2–2.0 V gate threshold voltage, and compatibility with 4.5 V logic-level gate drive in high-current switching topologies.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched SMPS, motor control inverters, and battery protection circuits. Its logic-level gate enables direct interfacing with microcontrollers and gate drivers without level-shifting, while its optimized charge characteristics (Q_g = 90–135 nC, Q_gd = 16–24 nC) support efficient 50–75 ns turn-on/off delays at 50 V V_DD.

Thermal design is enabled by a low R_thJC of 0.85 K/W and robust safe operating area (SOA) up to 100 V and 47 A in DC mode. The integrated body diode features 1.1–1.5 V forward voltage at 94 A and 80–120 ns reverse recovery time - critical for synchronous rectification and freewheeling in buck and half-bridge configurations.

Key Specifications

Pinout & Package

Package: PG-TO262-3-1 (leadless variant of TO-262), surface-mount with exposed drain pad for thermal performance. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IPB47N10SL26AKSA1 and IPP47N10SL26AKSA1, IPI47N10SL26AKSA1 offers superior thermal resistance (R_thJC = 0.85 K/W) and PCB-integrated cooling via its leadless TO262 package - making it optimal for space-constrained, high-power-density industrial applications demanding long-term reliability without heatsinks.

Availability

IPI47N10SL26AKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and battery protection systems requiring stable component supply across multi-year production cycles.

Supply support for IPI47N10SL26AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This part belongs to Infineon's SIPMOS™ logic-level power MOSFET product line, engineered for high-current, high-ruggedness switching in space- and thermally constrained applications where gate drive simplicity and avalanche reliability are critical.

FAQ

What is the maximum gate-source voltage rating for IPI47N10SL26AKSA1?

The absolute maximum V_GS is ±20 V per the datasheet. Operation beyond ±16 V risks permanent gate oxide damage. For reliable logic-level drive, maintain V_GS between 4.5 V (guaranteed enhancement) and 10 V (optimal R_DS(on)). Transient overshoot must be clamped below ±20 V using Zener diodes or gate resistors sized for expected ringing amplitude.

Does IPI47N10SL26AKSA1 have an integrated body diode, and what are its key parameters?

Yes - it features a monolithic anti-parallel body diode rated for 47 A continuous forward current (T_C = 25 °C) and 188 A pulsed. Key parameters include V_SD = 1.1–1.5 V at I_F = 94 A, t_rr = 80–120 ns, and Q_rr = 340–510 nC at V_R = 50 V and di/dt = 100 A/µs. These values enable use in synchronous rectification and freewheeling paths without external diodes.

Can IPI47N10SL26AKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (increasing with junction temperature) enables stable current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to ensure uniform T_j. Derate total current by 15% per additional device due to layout-induced imbalances, and verify SOA compliance under worst-case transient conditions.

What is the recommended PCB footprint and thermal relief for the PG-TO262-3-1 package?

Infineon specifies a minimum 6 cm² copper area (single-layer, 70 µm thick) connected directly to the drain pad for R_thJA = 40 K/W. Use thermal vias (≥8 × 0.3 mm diameter) under the pad to inner ground/power planes. Avoid solder mask over the pad; apply ENIG finish. Footprint must match PG-TO262-3-1 mechanical drawing SP0002-25704, with 0.5 mm clearance to adjacent traces for creepage at 100 V.