Infineon Technologies IPI47N10S33AKSA1

Overview

IPI47N10S33AKSA1 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 33 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 33 A, and 47 A continuous drain current at T_C = 25 °C. It features avalanche rating, 6 kV/µs dv/dt capability, and operates up to 175 °C - deployed in high-reliability DC-DC converters and motor drive half-bridges.

For engineers reviewing the IPI47N10S33AKSA1 datasheet, IPI47N10S33AKSA1 pinout, IPI47N10S33AKSA1 application, or IPI47N10S33AKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, single-pulse avalanche energy (400 mJ), gate charge profile (Q_g = 70–105 nC), and TO-262-3 package thermal resistance (R_thJC = 0.85 K/W).

Technical Context

This device implements a planar silicon-gate vertical DMOS structure optimized for low conduction loss and robust switching transients. Its 100 V V_(BR)DSS supports industrial 48 V bus systems, while the 33 mΩ R_DS(on) ensures <1.6 W conduction loss at 47 A (T_j = 25 °C). The 175 °C max junction temperature enables operation in sealed enclosures without forced airflow.

Dynamic performance is defined by C_iss = 2000–2500 pF, Q_gd = 29–43.5 nC, and t_d(off) = 63–99 ns under standard 50 V/47 A switching conditions. The integrated body diode exhibits t_rr = 100–150 ns and Q_rr = 400–600 nC, supporting synchronous rectification in buck topologies.

Key Specifications

Pinout & Package

Package: PG-TO262-3-1 (surface-mount variant of TO-220 outline, isolated drain tab, no through-hole pins). Mounting requires soldering the exposed drain pad to a large copper area (≥6 cm²) on FR4 PCB for thermal management.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IPP47N10S33AKSA1 and IPB47N10S33AKSA1, the IPI47N10S33AKSA1 offers identical electrical specs and junction-to-case thermal resistance but uses the TO-262-3 outline - enabling surface-mount assembly with lower profile than D2PAK while retaining TO-220-compatible footprint spacing.

Availability

IPI47N10S33AKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply and long-term lifecycle support.

Supply support for IPI47N10S33AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, headquartered in Munich.

This part belongs to the SIPMOS™ family of discrete power MOSFETs engineered for high-efficiency, high-reliability industrial and automotive power conversion - emphasizing ruggedness, thermal stability, and low-loss switching.

FAQ

What is the maximum safe operating temperature for IPI47N10S33AKSA1?

The absolute maximum junction temperature is +175 °C, and the device is fully specified for operation across –55 °C to +175 °C. Derating begins at T_C > 25 °C per the ID vs. T_C curve on page 4 of the datasheet; at T_C = 100 °C, continuous drain current drops to 33 A. Thermal design must ensure T_j remains below 175 °C under worst-case load and ambient conditions.

Does IPI47N10S33AKSA1 have an integrated body diode, and what are its key parameters?

Yes - it includes a monolithic fast-recovery body diode rated for 47 A continuous forward current (T_C = 25 °C) and 188 A pulsed. Key parameters include V_SD = 1.1–1.5 V at I_F = 94 A, t_rr = 100–150 ns, and Q_rr = 400–600 nC at dI_F/dt = 100 A/µs. These values enable use in synchronous rectification and freewheeling paths without external diodes in many topologies.

Can IPI47N10S33AKSA1 replace older 100 V MOSFETs like IRF540N in existing designs?

Direct replacement is possible only if layout, gate drive, and thermal constraints align. While both are 100 V N-channel MOSFETs, IPI47N10S33AKSA1 has significantly lower R_DS(on) (33 mΩ vs. 44 mΩ), higher I_D (47 A vs. 33 A), and superior avalanche rating (400 mJ vs. ~100 mJ). Gate threshold is similar (2.1–4 V), but Q_g is higher (70–105 nC vs. ~69 nC), requiring verification of gate driver strength and switching loss trade-offs.

What is the recommended PCB layout practice for thermal management of IPI47N10S33AKSA1?

Mount the device on a 40 mm × 40 mm × 1.5 mm FR4 PCB with ≥6 cm² of 70 µm-thick copper connected to the drain tab - ideally using multiple thermal vias to inner ground/power planes. Avoid narrow traces on source/gate connections to minimize inductance. Keep gate loop area small and place gate resistor and decoupling capacitor within 5 mm of the gate pin to suppress oscillation and EMI.