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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSC100N03MSGATMA1

Name: BSC100N03MSGATMA1
Brand: Infineon Technologies
SKU: BSC100N03MSGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSC100N03MSGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSC100N03MSGATMA1.pdf

Description:: MOSFET N-CH 30V 12A/44A TDSON

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Product details

Overview

BSC100N03MSGATMA1 from Infineon Technologies is an N-channel OptiMOS™3 M-Series Power-MOSFET optimized for 5 V gate drive in notebook CPU VRMs, VGA power stages, and point-of-load (POL) converters; features 12 mΩ R_DS(on) at V_GS = 4.5 V, 100% avalanche tested, JEDEC-qualified, and housed in PG-TDSON-8 package with bottom-side thermal pad.

For engineers reviewing the BSC100N03MSGATMA1 datasheet, BSC100N03MSGATMA1 pinout, BSC100N03MSGATMA1 application, or BSC100N03MSGATMA1 equivalent, key selection criteria include low gate charge × R_DS(on) figure-of-merit (FOM), 44 A continuous drain current at T_C = 25 °C, 30 V V_(BR)DSS, thermal resistance R_thJC = 4.1 K/W, and synchronous FET gate charge Q_g(sync) = 7.2–9.6 nC.

Technical Context

This MOSFET employs a trench-based silicon process to achieve high cell density and low specific on-resistance. Its gate threshold voltage (1–2 V) enables robust turn-on with 4.5 V logic-level drivers, while its low C_iss (1300–1700 pF) and C_rss (27 pF typ.) support high-frequency switching up to 1 MHz in DC/DC converters.

The device integrates a fast-recovery body diode with Q_rr ≤ 10 nC and V_SD = 0.91–1.1 V at I_F = 30 A, enabling efficient synchronous rectification. Thermal design leverages the exposed drain pad in PG-TDSON-8 for direct PCB heat sinking, achieving R_thJC = 4.1 K/W to the bottom surface.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	30 V - maximum blocking voltage before avalanche onset at I_D = 1 mA
R_DS(on) @ V_GS = 4.5 V	9.6–12 mΩ - ensures <150 mW conduction loss at 30 A in POL applications
I_D continuous @ T_C = 25 °C	44 A - supports high-current CPU core rails without forced air cooling
Q_g(sync) @ V_GS = 0–4.5 V	7.2–9.6 nC - minimizes gate drive power and switching loss in synchronous buck topologies
R_thJC (bottom)	4.1 K/W - enables >25 W power dissipation with moderate heatsinking on PCB copper
E_AS (single pulse)	10 mJ - withstands inductive energy during hard-switching or fault events
Q_rr	≤10 nC - reduces reverse recovery loss and EMI in high-frequency synchronous rectification

Pinout & Package

PG-TDSON-8 package with exposed drain pad on bottom side for thermal and electrical connection; 8-pin leadless surface-mount outline compliant with JEDEC MO-252.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain pads)	Power Drain / Heat Sink	All pins are internally connected to the drain terminal and exposed copper pad - must be soldered to large PCB copper area for thermal management
Source (pins 1–7 via internal tie, but electrically distinct from drain)	Source Terminal	Source connection is accessible only through dedicated source leads (not shared with drain); requires separate PCB routing for Kelvin sensing or low-inductance return
Gate (pin 8, isolated)	Control Input	Single gate input with 0.4–1.6 Ω intrinsic gate resistance - compatible with standard 5 V PWM controllers without external gate resistor

Key Features

Feature	Design Value
Optimized 5 V gate drive	Guarantees full enhancement at 4.5 V with V_GS(th) = 1–2 V, eliminating need for level-shifting in notebook VRMs
Low Q_g × R_DS(on) FOM	~85 mΩ·nC - improves efficiency in high-frequency SMPS by reducing combined conduction and switching losses
100% UIS avalanche tested	Rated for single-pulse I_AS = 40 A and E_AS = 10 mJ - ensures ruggedness against inductive switching transients
JEDEC qualification	Complies with J-STD-20 reflow and JESD22 reliability standards for industrial and computing applications
Halogen-free & RoHS	Meets IEC61249-2-21 and EU RoHS Directive - suitable for environmentally regulated OEM production

Applications

Notebook CPU Voltage Regulator

VGA Core Power Stage

Use Scenario: High-current, multi-phase buck converter supplying dynamic CPU core voltage (0.6–1.5 V) with >30 A per phase.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–1000 kHz with 4.5 V gate drive from integrated controller.

Use Value: 12 mΩ R_DS(on) and 7.2–9.6 nC Q_g(sync) reduce total power loss below 2.5 W per phase at 30 A.

Use Scenario: Dual-phase GPU core supply delivering up to 60 A peak with tight transient response requirements.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck stage, driven by dedicated gate driver.

Use Value: Body diode Q_rr ≤ 10 nC and V_SD ≤ 1.1 V minimize reverse recovery loss and improve light-load efficiency.

Point-of-Load (POL) Converter

Industrial DC/DC Module

Use Scenario: Compact 12 V input to 1.2 V/40 A output module for FPGA or ASIC power delivery.

IC Role / Device Role / Timing Role: Primary high-side MOSFET in 500 kHz fixed-frequency synchronous buck regulator.

Use Value: R_thJC = 4.1 K/W allows >25 W dissipation with 6 cm² PCB copper, enabling fanless operation.

Use Scenario: Isolated 48 V to 12 V intermediate bus converter in programmable logic controller (PLC) power system.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in active-clamp forward or LLC resonant topology.

Use Value: 30 V V_(BR)DSS and 100% avalanche rating ensure reliability under output short-circuit and load dump conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 11.5 mΩ @ 4.5 V; Q_g = 10.5 nC; SO-8 package with no exposed drain pad	Higher R_thJA (62 K/W vs. 50 K/W) limits power handling in compact layouts	Preferred where board space permits larger thermal relief or lower cost is prioritized over thermal performance
DMN3025LSD-13	R_DS(on) = 10.5 mΩ @ 4.5 V; Q_g = 12.5 nC; dual-N SO-8 with shared source	Lacks avalanche rating and JEDEC qualification; not recommended for mission-critical computing rails	Suitable for cost-sensitive consumer DC/DC where full industrial reliability is not required

Compared with IRLHS6342TRPBF and DMN3025LSD-13, BSC100N03MSGATMA1 delivers superior thermal performance via its exposed-drain PG-TDSON-8 package, verified avalanche ruggedness for transient immunity, and tighter gate charge control-making it optimal for high-density, high-reliability computing and industrial POL designs.

Availability

BSC100N03MSGATMA1 is available at Aetrix Electronics and suitable for notebook CPU VRMs, VGA power stages, and point-of-load (POL) converters requiring stable component supply, long-term lifecycle support, and traceable sourcing for volume production.

Supply support for BSC100N03MSGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOS™3 M-Series, designed specifically for high-efficiency, high-frequency DC/DC conversion in space-constrained computing and communications infrastructure where low R_DS(on), low gate charge, and thermal robustness are critical.

FAQ

What is the maximum safe operating temperature for BSC100N03MSGATMA1?

The junction temperature must not exceed 150 °C under continuous operation. The device is rated for T_j = –55 to +150 °C, and thermal design must maintain T_j ≤ 150 °C using the specified R_thJC = 4.1 K/W path to the PCB and appropriate copper area per datasheet layout guidelines.

Can BSC100N03MSGATMA1 be used as a synchronous rectifier in a 30 V output circuit?

Yes - its 30 V V_(BR)DSS rating and low Q_rr (≤10 nC) make it suitable for synchronous rectification in secondary-side 30 V output stages, provided V_DS stress remains within derated limits and gate drive timing avoids shoot-through.

Does this MOSFET require a gate resistor for typical 5 V PWM controller drive?

No external gate resistor is required for basic operation due to its intrinsic R_G = 0.4–1.6 Ω and compatibility with 4.5 V logic-level drivers; however, a small series resistor (1–5 Ω) may be added to damp ringing or fine-tune switching speed in high-dV/dt environments.

Is the PG-TDSON-8 package lead (Pb)-free and halogen-free?

Yes - BSC100N03MSGATMA1 uses Pb-free plating and complies with RoHS Directive 2011/65/EU and halogen-free requirements per IEC61249-2-21, confirmed in the official Infineon product summary Rev. 2.1.

BSC100N03MSGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 23 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 30W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8-5

BSC100N03MSGATMA1 FAQ

1.How can I place an order for BSC100N03MSGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSC100N03MSGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSC100N03MSGATMA1 reliable?

The price and inventory of BSC100N03MSGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSC100N03MSGATMA1 is usually 5 days.

3.What payment methods are accepted for BSC100N03MSGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSC100N03MSGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSC100N03MSGATMA1?

BSC100N03MSGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSC100N03MSGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSC100N03MSGATMA1?

For technical support, including BSC100N03MSGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSC100N03MSGATMA1 requirements.

6.How does Aetrix verify that BSC100N03MSGATMA1 is sourced from the original manufacturer or authorized distributors?

All BSC100N03MSGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSC100N03MSGATMA1 meets industry standards.

7.What is the process for return or replacement of BSC100N03MSGATMA1?

All BSC100N03MSGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSC100N03MSGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSC100N03MSGATMA1 part is unused and in its original packaging.

Return procedure for BSC100N03MSGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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