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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE057N10NM6ATMA1

Name: IQE057N10NM6ATMA1
Brand: Infineon Technologies
SKU: IQE057N10NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE057N10NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IQE057N10NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:3,838

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Product details

Overview

IQE057N10NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in 100 V power conversion systems. It delivers 5.7 mΩ max R_DS(on) at V_GS = 10 V, 98 A continuous drain current (T_C = 25 °C), and 37.6 nC reverse recovery charge (Q_rr) under 100 A/µs di/dt - enabling high-efficiency DC-DC converters and motor drives.

For engineers reviewing the IQE057N10NM6ATMA1 datasheet, IQE057N10NM6ATMA1 pinout, IQE057N10NM6ATMA1 application, or IQE057N10NM6ATMA1 equivalent, key selection criteria include its 175 °C rated junction temperature, ultra-low gate charge × R_DS(on) figure-of-merit, MSL 1 moisture sensitivity, and PG-TSON-8 package with integrated body diode for synchronous FET operation.

Technical Context

This OptiMOSTM 6 device uses trench-gate superjunction technology to achieve low conduction loss and fast switching dynamics. Its gate plateau voltage of 4.5 V supports robust drive margin in 5 V and 3.3 V gate driver systems, while the 0.57 °C/W junction-to-case thermal resistance enables high-power density layouts on thermally enhanced PCBs.

The MOSFET integrates a low-Q_rr, soft-recovery body diode (V_SD = 0.81 V typ. at 25 A, T_j = 25 °C) and exhibits 461 mJ single-pulse avalanche energy rating - supporting reliable operation in hard-switched topologies and transient overload conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for 48 V–60 V bus applications with 20 % safety margin
R_DS(on), max	5.7 mΩ at V_GS = 10 V, I_D = 25 A - Enables <1.5 W conduction loss at 50 A in continuous operation
Q_G	27–34 nC - Low total gate charge reduces driver power and enables >1 MHz switching in LLC resonant converters
Q_rr	37.6 nC at dI/dt = 100 A/µs - Minimizes switching loss and EMI during body diode commutation in synchronous rectifiers
T_j max	175 °C - Supports operation in sealed industrial enclosures without forced air cooling
R_thJC	0.57 °C/W - Allows direct heatsink mounting via exposed drain pad for thermal management in compact power modules
I_D, cont	98 A at T_C = 25 °C - Sustains high-current output in server VRMs and telecom rectifiers with minimal derating

Pinout & Package

PG-TSON-8 package with exposed drain pad (pins 5–8) for thermal and electrical connection; gate on pin 4; source on pins 1–3. RoHS-compliant, halogen-free, MSL 1.

Pin/Terminal	Circuit Role	Design Meaning
Pins 1–3	Source	Low-inductance parallel connection for return path integrity and minimized common-source inductance
Pin 4	Gate	Single-point control input requiring <1.8 Ω gate resistance to suppress ringing during 12.5 A switching transitions
Pins 5–8	Drain	Exposed copper pad providing primary thermal path to heatsink and low-impedance high-current output node

Key Features

Feature	Design Value
Optimized gate charge × R_DS(on) FOM	Sub-160 Ω·nC - Reduces combined conduction + switching loss in high-frequency SMPS designs
Low Q_rr with soft recovery	37.6 nC @ 100 A/µs - Limits voltage overshoot and EMI during zero-voltage switching transitions
175 °C operation with full current rating	98 A maintained up to T_C = 100 °C - Eliminates need for oversized heatsinks in space-constrained industrial inverters
Integrated body diode	V_SD = 0.81 V @ 25 A, T_j = 25 °C - Enables self-synchronous operation without external Schottky diodes in buck converters
MSL 1 moisture sensitivity	No floor life limitation - Supports standard SMT reflow without baking or dry pack handling

Applications

Server VRM Phase Legs

Industrial Motor Drive Half-Bridge

Use Scenario: High-current, high-frequency buck converter supplying CPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous high-side FET in multiphase VRM delivering up to 300 A per rail.

Use Value: 5.7 mΩ R_DS(on) and 34 nC Q_G enable >95 % efficiency at 1 MHz switching with minimal thermal footprint.

Use Scenario: 3-phase inverter stage driving 5–10 kW PMSM motors in CNC machine tools.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid half-bridge with active freewheeling.

Use Value: 37.6 nC Q_rr and soft recovery reduce shoot-through risk and EMI during PWM dead-time commutation.

Telecom Rectifier Modules

Onboard Charger (OBC) DC-DC Stage

Use Scenario: 48 V input, 12 V output isolated DC-DC converter in 48 V telecom power shelves.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in forward or active-clamp flyback topology.

Use Value: 175 °C rating and 461 mJ avalanche energy ensure reliability under line surge and load dump transients.

Use Scenario: Bidirectional 800 V–400 V DC-DC converter in EV onboard chargers with GaN half-bridge.

IC Role / Device Role / Timing Role: Low-side synchronous FET in dual-active-bridge (DAB) secondary side.

Use Value: PG-TSON-8 package allows direct thermal coupling to aluminum baseplate, maintaining <110 °C T_j at 60 A continuous.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	R_DS(on) = 4.5 mΩ (lower), Q_G = 42 nC (higher), T_j max = 175 °C, same PG-TSON-8	Higher gate drive loss limits usable frequency to ≤500 kHz in high-current VRMs	Prefer when lowest conduction loss dominates over switching speed; verify gate driver capability for 42 nC load
IXTP50N10P	R_DS(on) = 10 mΩ (higher), Q_G = 22 nC (lower), TO-220 package, T_j max = 175 °C	Larger thermal resistance (R_thJC = 1.2 °C/W) requires heatsink even at 30 A continuous	Choose only for legacy through-hole designs or where board-level thermal constraints preclude surface-mount packages

Compared with STL220N10F7 and IXTP50N10P, IQE057N10NM6ATMA1 offers the best balance of low R_DS(on), moderate Q_G, and superior thermal performance in a compact surface-mount package - making it optimal for new high-density, high-frequency power designs.

Availability

IQE057N10NM6ATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IQE057N10NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 6 family - engineered specifically for high-efficiency, high-frequency power conversion in datacenter, industrial, and renewable energy systems where thermal density and switching loss are critical design constraints.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IQE057N10NM6ATMA1 supports 69 A continuous drain current at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the datasheet. This value reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and must be applied in thermal design calculations for enclosed environments.

Does this MOSFET require a negative gate turn-off voltage to prevent spurious turn-on?

No. The gate threshold voltage V_GS(th) ranges from 2.3 V to 3.3 V at T_j = 25 °C, and remains above 1.5 V even at 175 °C (per Diagram 10). With typical gate drive of 0 V to 10 V and proper PCB layout minimizing dv/dt coupling, no negative turn-off bias is required for reliable operation.

Can the internal body diode be used for continuous freewheeling in a synchronous buck converter?

Yes. The device's body diode supports 98 A continuous forward current (I_S) at T_C = 25 °C and exhibits soft reverse recovery (Q_rr = 37.6 nC, t_rr = 35.4 ns) - enabling reliable use in synchronous rectification without external diodes, provided thermal design accommodates diode conduction losses.

Is the PG-TSON-8 package compatible with standard reflow profiles for lead-free soldering?

Yes. As an MSL 1 device, IQE057N10NM6ATMA1 is qualified for standard JEDEC J-STD-020 lead-free reflow profiles (peak temperature ≤260 °C, time above 217 °C ≤60 seconds). No pre-baking is required, and the package withstands multiple reflow cycles without degradation to solder joint integrity or die attach.

IQE057N10NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IQE057N10NM6ATMA1 FAQ

1.How can I place an order for IQE057N10NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE057N10NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE057N10NM6ATMA1 reliable?

The price and inventory of IQE057N10NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE057N10NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IQE057N10NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE057N10NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE057N10NM6ATMA1?

IQE057N10NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE057N10NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE057N10NM6ATMA1?

For technical support, including IQE057N10NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE057N10NM6ATMA1 requirements.

6.How does Aetrix verify that IQE057N10NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE057N10NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE057N10NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IQE057N10NM6ATMA1?

All IQE057N10NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE057N10NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE057N10NM6ATMA1 part is unused and in its original packaging.

Return procedure for IQE057N10NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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