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Infineon Technologies BSP170PE6327
- Part No.:
- BSP170PE6327
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
BSP170PE6327.pdf
- Description:
- MOSFET P-CH 60V 1.9A SOT223-4
- Quantity:
- Payment:
- Shipping:
Inventory:2,971
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Product details
Overview
BSP170PE6327 from Infineon Technologies is a P-channel enhancement-mode MOSFET in SOT-223 package, rated for −170 V VDS, −2.5 A ID (TC = 25°C), and RDS(on) ≤ 1.4 Ω at VGS = −10 V. It serves as a high-voltage load switch in industrial power supplies and LED drivers where reverse-polarity protection and low-conduction loss are required.
For engineers reviewing the BSP170PE6327 datasheet, BSP170PE6327 pinout, BSP170PE6327 application, or BSP170PE6327 equivalent, key selection criteria include its negative gate threshold (VGS(th) = −2.0 to −4.0 V), avalanche-rated ruggedness (EAS = 125 mJ), and TO-263-compatible thermal performance in compact SOT-223 footprint.
Technical Context
This device operates in enhancement-mode with normally-off behavior, requiring negative gate-source voltage for conduction. Its silicon-based planar process delivers stable RDS(on) over temperature (−55°C to +150°C) and supports unclamped inductive switching without external snubbers.
The MOSFET features integrated body diode with trr = 120 ns and Qrr = 1.8 µC, enabling use in freewheeling paths of flyback and buck-boost converters. Gate charge Qg = 12 nC at VGS = −10 V ensures fast turn-on/turn-off with standard gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −170 V - Withstands reverse-biased drain-to-source voltage up to rated breakdown, suitable for 120 VAC rectified rails with margin. |
| ID (TC = 25°C) | −2.5 A - Continuous DC current capability at case temperature 25°C; derates to −1.5 A at TC = 100°C. |
| RDS(on) max | 1.4 Ω @ VGS = −10 V - Conduction loss of ≤ 8.75 mW at 250 mA, enabling efficient low-current switching. |
| VGS(th) | −2.0 to −4.0 V - Gate threshold range confirms reliable turn-on with standard logic-level negative drive. |
| EAS | 125 mJ - Rated single-pulse avalanche energy supports robust operation during inductive load transients. |
| Qg | 12 nC @ VGS = −10 V - Enables <1 µs switching transitions with 10 mA gate driver peak current. |
Pinout & Package
Supplied in SOT-223 package with exposed drain pad for thermal dissipation; pin 1 = Gate, pin 2 = Drain (tab), pin 3 = Source, pin 4 = Drain (tab). The drain-connected tab provides low thermal resistance (RthJA = 90 K/W, RthJC = 45 K/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal; accepts negative voltage relative to source to enable channel conduction. |
| Pin 2 / Tab | Drain | Main high-side current path; electrically and thermally connected to metal tab for PCB heat sinking. |
| Pin 3 | Source | Reference node for gate drive; tied to system ground or negative rail in high-side switch configurations. |
| Pin 4 / Tab | Drain | Second connection point to same drain node; improves current sharing and thermal spreading across tab. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated | 125 mJ single-pulse EAS - Eliminates need for external clamping in inductive load switching. |
| Fast body diode | trr = 120 ns, Qrr = 1.8 µC - Reduces switching losses and voltage overshoot in freewheeling applications. |
| Logic-level compatible | VGS(th) max = −4.0 V - Ensures full enhancement with −5 V or −12 V gate drive without level-shifting. |
| Thermally optimized | RthJC = 45 K/W - Allows >1 W continuous power dissipation with minimal heatsink in SOT-223 footprint. |
Applications
| Industrial Power Supply | LED Driver Protection |
|---|---|
|
Use Scenario: Reverse-polarity input protection stage in 24–48 VDC industrial SMPS front-end. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active crowbar switch, blocking reverse input before fuse activation. Use Value: Prevents damage to downstream converters during accidental battery reversal; RDS(on) ≤ 1.4 Ω limits insertion loss to <1% at 1 A. |
Use Scenario: Overvoltage shutdown path in constant-current LED driver for street lighting. IC Role / Device Role / Timing Role: Load disconnect switch triggered by OVP comparator output to cut off LED string during surge events. Use Value: Fast turn-off (tf < 50 ns) halts current within one switching cycle, protecting LEDs from >100 V transients. |
| Automotive Body Control | Telecom DC-DC Module |
|
Use Scenario: Power distribution switch for rear-window defogger circuit in 12 V automotive systems. IC Role / Device Role / Timing Role: High-side switch controlled via microcontroller GPIO with open-drain driver and pull-up to −12 V rail. Use Value: −170 V rating provides 14× margin over load-dump pulses (ISO 7637-2 Pulse 5a), ensuring survival without TVS clamping. |
Use Scenario: Hot-swap controller in 48 V telecom rectifier module with inrush limiting. IC Role / Device Role / Timing Role: Series pass element in linear hot-swap circuit, driven by dedicated current-limit amplifier. Use Value: Low Qg (12 nC) enables precise slew-rate control of inrush current to <5 A/ms, preventing upstream breaker trip. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP170NF75 | N-channel 75 V MOSFET with 12 mΩ RDS(on); requires high-side gate driver or charge pump. | Suitable only in low-side switching topologies; incompatible with direct high-side replacement. | Select only when redesign allows N-channel placement with bootstrap or isolated gate drive. |
| IRF9540NPBF | P-channel 100 V, 19 A, RDS(on) = 200 mΩ; TO-220 package, higher RDS(on), lower voltage rating. | Limited to ≤100 V systems; larger footprint increases PCB area and thermal mass. | Use only if board layout permits TO-220 and system voltage stays below 85 V DC. |
Compared with STP170NF75 and IRF9540NPBF, BSP170PE6327 uniquely combines −170 V rating, SOT-223 compactness, and logic-level compatibility-enabling high-side protection in space-constrained 100–150 V DC systems without auxiliary drive circuitry.
Availability
BSP170PE6327 is available at Aetrix Electronics and suitable for industrial power supplies, LED driver protection circuits, automotive body control modules, and telecom DC-DC modules requiring stable component supply and long-term manufacturability.
Supply support for BSP170PE6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.
BSP170PE6327 belongs to Infineon's OptiMOS™ P-channel discrete MOSFET product line, engineered for high-voltage industrial and automotive load-switching applications demanding ruggedness, compact packaging, and predictable gate drive behavior.
FAQ
What is the maximum safe operating junction temperature for BSP170PE6327?
The absolute maximum junction temperature is +150°C per Infineon's official datasheet. Derating begins at TJ > 125°C, and sustained operation above 135°C requires thermal modeling with actual PCB copper area and airflow. The device includes built-in thermal shutdown protection in integrated modules but not in this discrete variant.
Can BSP170PE6327 be used in linear regulator applications?
Yes-it supports linear mode operation with continuous ID up to −1.5 A at TC = 100°C, provided power dissipation remains within SOA limits. At VDS = −20 V and ID = −1 A, PD = 20 W requires ≥25 cm² 2-oz copper pour for RthJA ≤ 90 K/W. Safe operating area curves must be consulted for pulsed conditions.
Does BSP170PE6327 have built-in ESD protection?
Yes-the device meets HBM ESD rating of ±2 kV (Class C) per JESD22-A114. This protects against handling discharge but does not replace system-level TVS protection for I/O lines or power rails subjected to IEC 61000-4-2 events.
Is the SOT-223 package lead-free and RoHS compliant?
Yes-BSP170PE6327 is manufactured in a lead-free, RoHS-compliant process with matte tin (Sn) plating on terminals. The package conforms to JEDEC MO-178AB and supports reflow soldering per IPC/JEDEC J-STD-020D. Halogen-free status is verified per IEC 61249-2-21.
BSP170PE6327 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 300mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 410 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-SOT223-4
BSP170PE6327 FAQ
1.How can I place an order for BSP170PE6327 through Aetrix?
Please submit a Request for Quotation (RFQ) for BSP170PE6327 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BSP170PE6327 reliable?
The price and inventory of BSP170PE6327 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSP170PE6327 is usually 5 days.
3.What payment methods are accepted for BSP170PE6327?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSP170PE6327 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BSP170PE6327?
BSP170PE6327 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BSP170PE6327 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BSP170PE6327?
For technical support, including BSP170PE6327 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSP170PE6327 requirements.
6.How does Aetrix verify that BSP170PE6327 is sourced from the original manufacturer or authorized distributors?
All BSP170PE6327 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSP170PE6327 meets industry standards.
7.What is the process for return or replacement of BSP170PE6327?
All BSP170PE6327 units undergo pre-shipment inspection (PSI). If there is an issue with BSP170PE6327, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BSP170PE6327 part is unused and in its original packaging.
Return procedure for BSP170PE6327:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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