FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSP129H6906XTSA1MOSFET N-CH 240V 350MA SOT223-4 Infineon Technologies |
3,261 | 0.00 |
|
Datasheet |
SIPMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 240 V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7 nC @ 5 V | ±20V | 108 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
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BSZ0702LSATMA1MOSFET N-CH 60V 17A/40A TSDSON Infineon Technologies |
4,198 | 0.00 |
|
Datasheet |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Ta), 40A (Tc) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.3V @ 36µA | 22 nC @ 4.5 V | ±20V | 3100 pF @ 30 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 FL |
|
IQE057N10NM6CGATMA1TRENCH >=100V Infineon Technologies |
5,949 | 0.00 |
|
Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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AUIRFR4104TRLMOSFET N-CH 40V 42A DPAK Infineon Technologies |
3,905 | 0.00 |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | - | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89 nC @ 10 V | - | 2950 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
AUIRLR2905ZTRLMOSFET N-CH 55V 42A DPAK Infineon Technologies |
3,273 | 0.00 |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | - | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35 nC @ 5 V | - | 1570 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPP100P03P3L-04MOSFET P-CH 30V 100A TO220-3 Infineon Technologies |
2,649 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 4.3mOhm @ 80A, 10V | 2.1V @ 475µA | 200 nC @ 10 V | +5V, -16V | 9300 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IRF6608TR1MOSFET N-CH 30V 13A DIRECTFET Infineon Technologies |
3,712 | 0.00 |
|
Datasheet |
HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 55A (Tc) | 4.5V, 10V | 9mOhm @ 13A, 10V | 3V @ 250µA | 24 nC @ 4.5 V | ±12V | 2120 pF @ 15 V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |
|
IRF6604TR1MOSFET N-CH 30V 12A DIRECTFET Infineon Technologies |
8,960 | 0.00 |
|
Datasheet |
HEXFET® | DirectFET™ Isometric MQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 49A (Tc) | 4.5V, 7V | 11.5mOhm @ 12A, 7V | 2.1V @ 250µA | 26 nC @ 4.5 V | ±12V | 2270 pF @ 15 V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MQ |
|
IRFR120ZMOSFET N-CH 100V 8.7A DPAK Infineon Technologies |
9,443 | 0.00 |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 8.7A (Tc) | 10V | 190mOhm @ 5.2A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±20V | 310 pF @ 25 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
|
IPI50R350CPMOSFET N-CH 550V 10A TO262-3 Infineon Technologies |
9,595 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25 nC @ 10 V | ±20V | 1020 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
