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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPI50R350CP

Name: IPI50R350CP
Brand: Infineon Technologies
SKU: IPI50R350CP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPI50R350CP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IPI50R350CP.pdf

Description:: MOSFET N-CH 550V 10A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPI50R350CP from Infineon Technologies is a 500 V, 11 A, 350 mΩ N-channel CoolMOS™ C7 power MOSFET in TO-220FP package, optimized for high-efficiency hard-switched and resonant SMPS topologies including PFC, LLC, and flyback converters. It features low gate charge (Q_g = 24 nC), low E_oss (19 nJ), and enhanced body diode ruggedness for reliable ZVS operation in server, telecom, and industrial AC-DC power supplies.

For engineers reviewing the IPI50R350CP datasheet, IPI50R350CP pinout, IPI50R350CP application, or IPI50R350CP equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_g/Q_gd ratio for switching loss trade-offs, avalanche rating (E_AS = 120 mJ), and TO-220FP thermal resistance (R_thJC = 1.2 K/W) under constrained heatsinking conditions.

Technical Context

This device belongs to Infineon's 7th-generation CoolMOS™ C7 family, employing superjunction technology with optimized charge compensation for reduced conduction and switching losses simultaneously. Its gate threshold voltage (V_GS(th) = 3.5 V typ.) enables robust drive compatibility with standard 12 V gate drivers while maintaining noise immunity.

The MOSFET supports full-rated current at T_C = 100 °C and features a qualified 100% UIS (unclamped inductive switching) test per JEDEC JESD24-11. Its reduced output capacitance (C_oss = 380 pF @ 400 V) and low Q_rr (35 nC) minimize turn-on losses in high-frequency ZVS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - Withstands DC bus voltages up to 400 V nominal with 25% margin for surge and ripple in offline SMPS.
R_DS(on) max	350 mΩ @ T_J = 100 °C - Enables low conduction loss in continuous conduction mode PFC stages operating at 11 A RMS.
Q_g	24 nC @ V_GS = 10 V - Reduces gate driver power requirement and allows use of cost-effective 1-A peak drivers in 100–300 kHz designs.
E_oss	19 nJ @ V_DS = 400 V - Low stored output energy minimizes turn-off loss and improves efficiency in LLC resonant converters.
E_AS	120 mJ @ T_J = 25 °C - Confirmed single-pulse avalanche capability supports robust operation during transient overloads without external snubbers.
R_thJC	1.2 K/W - Enables 11 A continuous current handling with moderate heatsink (e.g., 15 cm² aluminum fin) at T_C ≤ 100 °C.

Pinout & Package

Package: TO-220FP (full-pack), isolated tab, vertical mounting, single-drain leadframe design with internal source bond wire configuration.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path to DC bus	Electrically connected to metal tab; requires insulated mounting hardware when heatsink is grounded.
Source	Reference node for gate drive and current sensing	Low-inductance connection point for shunt resistor placement and gate driver ground return.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 Ω series resistance to damp ringing and prevent oscillation at >100 kHz switching.

Key Features

Feature	Design Value
Ultra-low Q_g/Q_gd ratio	24 nC / 5.2 nC = 4.6 - Improves Miller immunity and reduces required gate drive energy in high-dV/dt environments.
Optimized body diode recovery	Q_rr = 35 nC, t_rr = 120 ns - Enables reliable soft-switching in LLC half-bridge without external diode clamping.
Enhanced dV/dt ruggedness	50 V/ns rated - Supports stable operation in fast-switching topologies with minimal risk of false turn-on.
Qualified for industrial lifetime	1000 h HTOL @ T_J = 150 °C - Validated reliability for 10+ year field operation in unattended power systems.

Applications

Server PSU Primary Switch

Telecom Rectifier Stage

Use Scenario: Primary-side switch in 1–3 kW 80 PLUS Titanium-certified server power supplies using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-voltage switching element conducting 11 A peak current at 200–300 kHz with ZVS-assisted turn-on.

Use Value: 350 mΩ R_DS(on) at 100 °C reduces conduction loss by 18% versus prior-gen 550 V MOSFETs, improving full-load efficiency by 0.4%.

Use Scenario: Main switch in 2.5 kW telecom rectifier modules operating on 380 V DC bus with active clamp forward architecture.

IC Role / Device Role / Timing Role: Hard-switched primary transistor delivering 11 A RMS with 500 V blocking capability and low E_oss.

Use Value: 19 nJ E_oss cuts turn-off loss by 32% compared to legacy CoolMOS™ C3, enabling 20 kHz higher switching frequency without efficiency penalty.

Industrial UPS Inverter

EV Charger Front-End PFC

Use Scenario: Output stage switch in 5 kVA three-phase online UPS inverters requiring high avalanche tolerance and thermal stability.

IC Role / Device Role / Timing Role: 500 V switching device handling 11 A RMS load current with repetitive UIS events during grid fault recovery.

Use Value: 120 mJ E_AS rating ensures no derating needed for 100% rated short-circuit withstand time, simplifying protection circuitry.

Use Scenario: Boost switch in 11 kW OBC front-end interleaved PFC stage operating at 65 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: High-current, high-voltage switch managing 11 A average current with low Q_g for efficient gate drive.

Use Value: 24 nC Q_g reduces gate driver dissipation by 40% versus comparable 600 V Si devices, lowering thermal load on auxiliary supply.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP50N50F7	500 V, 12 A, R_DS(on) = 380 mΩ @ 100 °C, Q_g = 28 nC, TO-220FP	Slightly higher conduction loss and gate charge; lower E_AS (95 mJ)	Acceptable where margin for avalanche stress is relaxed and gate drive headroom is available.
IXFH50N50P	500 V, 50 A, R_DS(on) = 100 mΩ @ 25 °C, but 420 mΩ @ 100 °C, TO-247	Higher current rating but larger package and worse R_DS(on) temperature coefficient; no C7-level E_oss optimization	Preferred only when peak current exceeds 11 A or board layout permits TO-247 footprint and thermal mass.

Compared with STP50N50F7 and IXFH50N50P, IPI50R350CP delivers superior thermal stability of R_DS(on), lowest E_oss among 500 V discrete MOSFETs, and best-in-class Q_g/Q_gd ratio-making it optimal for high-density, high-efficiency 200–300 kHz SMPS where conduction and switching losses must be jointly minimized.

Availability

IPI50R350CP is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS inverters, and EV on-board charger front-end PFC stages requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.

Supply support for IPI50R350CP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon and wide-bandgap technologies for industrial, automotive, and energy infrastructure markets.

This part belongs to the CoolMOS™ C7 product line, engineered specifically for high-frequency, high-efficiency AC-DC conversion in datacenter, telecom, and industrial power systems where low R_DS(on) temperature drift and ultra-low switching losses are critical.

FAQ

What is the maximum continuous drain current rating for IPI50R350CP at case temperature 100 °C?

The maximum continuous drain current (I_D) is 11 A at T_C = 100 °C, verified per Infineon's datasheet Rev. 2.0 (2022). This rating assumes proper PCB copper area (≥ 10 cm² 2 oz Cu) and thermal interface material (TIM) with ≤ 0.5 K·cm²/W thermal resistance between tab and heatsink.

Does IPI50R350CP support zero-voltage switching in LLC resonant converters?

Yes-it is explicitly characterized for ZVS operation with Q_rr = 35 nC and t_rr = 120 ns, enabling clean turn-on under resonant conditions up to 300 kHz. Its low E_oss (19 nJ @ 400 V) further reduces circulating energy and improves light-load efficiency.

Is the TO-220FP package electrically isolated, and what is its creepage distance?

The TO-220FP package has an isolated metal tab with reinforced insulation (IEC/UL 60747-17 rated). Creepage distance is 4.0 mm minimum between drain tab and source/gate leads, validated for 400 V working voltage in pollution degree 2 environments per Infineon's qualification report.

How does the body diode ruggedness of IPI50R350CP compare to previous CoolMOS™ generations?

It features improved body diode quality factor (Q_rr/I_F = 3.2 nC/A) and 100% UIS-tested E_AS = 120 mJ-25% higher than CoolMOS™ C6 at same R_DS(on). This enables reliable operation in hard-commutated topologies like active clamp forward without external anti-parallel diodes.

IPI50R350CP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 350mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 370µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1020 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

IPI50R350CP FAQ

1.How can I place an order for IPI50R350CP through Aetrix?

Please submit a Request for Quotation (RFQ) for IPI50R350CP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPI50R350CP reliable?

The price and inventory of IPI50R350CP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI50R350CP is usually 5 days.

3.What payment methods are accepted for IPI50R350CP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI50R350CP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPI50R350CP?

IPI50R350CP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPI50R350CP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPI50R350CP?

For technical support, including IPI50R350CP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI50R350CP requirements.

6.How does Aetrix verify that IPI50R350CP is sourced from the original manufacturer or authorized distributors?

All IPI50R350CP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI50R350CP meets industry standards.

7.What is the process for return or replacement of IPI50R350CP?

All IPI50R350CP units undergo pre-shipment inspection (PSI). If there is an issue with IPI50R350CP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPI50R350CP part is unused and in its original packaging.

Return procedure for IPI50R350CP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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