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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6604TR1

Name: IRF6604TR1
Brand: Infineon Technologies
SKU: IRF6604TR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6604TR1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MQ

Datasheet:: IRF6604TR1.pdf

Description:: MOSFET N-CH 30V 12A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:8,960

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Product details

Overview

IRF6604TR1 from Infineon Technologies is a 30 V, 12 A N-channel Power MOSFET in DirectFET® package, optimized for synchronous buck converter control FETs with R_DS(on) = 11.5 mΩ @ V_GS = 7.0 V, Q_g = 17 nC, and ultra-low 0.7 mm profile. It delivers low conduction and switching losses in CPU core DC-DC converters operating at high frequencies.

For engineers reviewing the IRF6604TR1 datasheet, IRF6604TR1 pinout, IRF6604TR1 application, or IRF6604TR1 equivalent, key selection criteria include gate charge balance (Q_gd/Q_gs1 ratio), junction-to-PCB thermal resistance (1.0 °C/W), and body diode reverse recovery charge (Q_rr = 26–39 nC) in high-density power stages.

Technical Context

The IRF6604TR1 employs trench-gate HEXFET silicon with DirectFET packaging to achieve dual-sided cooling and 80% lower thermal resistance versus prior-generation SO-8 equivalents. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) and negative temperature coefficient (−4.5 mV/°C) support stable operation across −40°C to +150°C junction range.

Designed specifically for control-FET roles in non-isolated DC-DC converters, it minimizes shoot-through risk via low Q_gd/Q_gs1 ratio and reduces total loss through low Q_oss (9.5 nC) and C_rss (190 pF), critical for high-dV/dt switching nodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters.
R_DS(on) @ 7.0 V	11.5 mΩ - Enables ≤1.5 W conduction loss at 12 A RMS in compact CPU core supplies.
Q_g	17 nC - Low gate drive energy reduces controller loading and enables efficient 500 kHz–1 MHz switching.
Q_rr	26–39 nC - Body diode recovery charge directly impacts synchronous FET turn-on loss and cross-conduction risk.
R_θJ-PCB	1.0 °C/W - Enables direct PCB copper thermal path for high-power density layouts without heatsinks.
Package Height	0.7 mm - Fits under low-profile VRMs and allows stacked power stage designs.
C_iss	2270 pF - Input capacitance determines gate driver slew rate requirements and EMI filtering needs.

Pinout & Package

IRF6604TR1 uses the DirectFET® M2 package (footprint compatible with SO-8, height 0.7 mm), with top-side drain and bottom-side source/gate terminals enabling dual-sided cooling. The package integrates no external leads - all connections are made via solderable metal pads on PCB.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current output node; thermally coupled to PCB copper pour for heat extraction.
Bottom Left Pad	Source (S)	Low-side return path; connects to ground plane and provides gate reference for synchronous FET operation.
Bottom Right Pad	Gate (G)	Control input; isolated by low Q_gd/Q_gs1 ratio to suppress dV/dt-induced turn-on in buck node.

Key Features

Feature	Design Value
Dual-sided cooling capability	Enables thermal transfer from both top (drain pad) and bottom (source/gate pads), reducing effective R_θJA to 12.5 °C/W.
Ultra-low package inductance	Minimizes voltage overshoot and ringing during hard switching, critical for >1 MHz buck converters.
Optimized Q_gd/Q_gs1 ratio	Reduces susceptibility to C_dv/dt turn-on when placed as synchronous FET in high-dV/dt node.
Body diode with low V_SD	Forward voltage of 0.94–1.2 V at 9.6 A ensures minimal reverse conduction loss during dead-time.
Low Q_oss	9.5 nC output charge limits capacitive switching loss and improves light-load efficiency.

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: High-current, high-frequency buck converter supplying modern x86 or ARM processors with dynamic load steps up to 300 A/µs.

IC Role / Device Role / Timing Role: Control FET switching node, handling full input voltage swing (0–12 V) with precise timing synchronized to PWM controller.

Use Value: 11.5 mΩ R_DS(on) and 17 nC Q_g enable ≥92% peak efficiency at 500 kHz while maintaining <1.5 mm board height.

Use Scenario: Multi-phase VRM powering discrete graphics processing units with tight voltage regulation (<±10 mV) and fast transient response.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in low-side position, conducting during freewheeling phase with body diode reverse recovery managed by Q_rr = 26 nC.

Use Value: 1.0 °C/W R_θJ-PCB allows direct thermal coupling to 2 oz copper, sustaining 12 A continuous per phase without derating.

Server DDR5 Memory Regulator

AI Accelerator Board Power Stage

Use Scenario: Point-of-load converter delivering 1.1 V @ 60 A to DDR5 memory modules with strict ripple (<15 mV_pp) and EMI requirements.

IC Role / Device Role / Timing Role: High-side switch in 2-phase interleaved topology, requiring matched R_DS(on) and gate charge for current balancing.

Use Value: Tight R_DS(on) distribution (9.0–11.5 mΩ) and low C_iss variation ensure phase current sharing accuracy within ±3%.

Use Scenario: Compact, high-density power delivery for edge AI inference accelerators with thermal constraints below 65°C ambient.

IC Role / Device Role / Timing Role: Primary switching element in 48 V–12 V intermediate bus converter, operating at 750 kHz with forced air cooling.

Use Value: 0.7 mm profile permits double-sided component placement, increasing power density by 35% versus SO-8 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6614TR1PBF	R_DS(on) = 8.0 mΩ @ 7.0 V; Q_g = 22 nC; same DirectFET M2 package	Higher conduction loss trade-off for lower R_DS(on), but increased gate drive loss and larger Q_gd	Preferred where conduction loss dominates (e.g., low-frequency, high-current phases); less suitable for >1 MHz operation due to higher Q_g.
SiR872DP-T1-GE3	R_DS(on) = 9.0 mΩ @ 10 V; Q_g = 24 nC; PowerPAK® 1212-8 package (1.0 mm height)	Higher profile limits board stacking; different thermal path (single-sided only)	Used where legacy layout compatibility with PowerPAK is required; not recommended for space-constrained VRMs needing dual-sided cooling.

Compared with IRF6614TR1PBF and SiR872DP-T1-GE3, the IRF6604TR1 offers the optimal balance of gate charge (17 nC), thermal resistance (1.0 °C/W), and profile (0.7 mm) for high-frequency, high-density CPU/GPU VRMs - making it uniquely suited for next-gen compute power delivery where switching loss and board height are primary constraints.

Availability

IRF6604TR1 is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery systems, and AI accelerator board power stages requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRF6604TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The IRF6604TR1 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and data center power applications.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF6604TR1 supports 9.2 A continuous drain current at T_A = 70°C with V_GS = 7.0 V, based on its 55 °C/W junction-to-ambient thermal resistance and 11.5 mΩ R_DS(on). This rating assumes standard 1-inch² 2 oz copper pad with 2 vias and no forced airflow.

Does the IRF6604TR1 require a gate resistor for stability in buck converter applications?

Yes - a 2.2–4.7 Ω gate resistor is recommended to dampen gate oscillation caused by PCB trace inductance interacting with C_iss (2270 pF) and Q_g (17 nC). This prevents unintended turn-on during high dV/dt transitions and ensures clean switching waveforms at 500 kHz–1 MHz.

How does the body diode reverse recovery time affect synchronous FET operation?

The IRF6604TR1's t_rr of 31–47 ns and Q_rr of 26–39 nC directly impact shoot-through risk and conduction loss in synchronous rectification. Shorter t_rr reduces overlap between high-side and low-side FET conduction, lowering cross-conduction loss and improving light-load efficiency.

Can IRF6604TR1 be used in parallel configurations for higher current capacity?

Yes - its positive R_DS(on) temperature coefficient (9.0–11.5 mΩ over −40°C to +150°C) enables inherent current sharing. For reliable paralleling, match gate drive loop inductance, use identical PCB copper area per device, and ensure symmetrical thermal mounting to avoid thermal runaway.

IRF6604TR1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MQ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 11.5mOhm @ 12A, 7V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2270 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MQ

IRF6604TR1 FAQ

1.How can I place an order for IRF6604TR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6604TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6604TR1 reliable?

The price and inventory of IRF6604TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6604TR1 is usually 5 days.

3.What payment methods are accepted for IRF6604TR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6604TR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6604TR1?

IRF6604TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6604TR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6604TR1?

For technical support, including IRF6604TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6604TR1 requirements.

6.How does Aetrix verify that IRF6604TR1 is sourced from the original manufacturer or authorized distributors?

All IRF6604TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6604TR1 meets industry standards.

7.What is the process for return or replacement of IRF6604TR1?

All IRF6604TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6604TR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6604TR1 part is unused and in its original packaging.

Return procedure for IRF6604TR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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