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Infineon Technologies IRF6608TR1
- Part No.:
- IRF6608TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric ST
- Datasheet:
-
IRF6608TR1.pdf
- Description:
- MOSFET N-CH 30V 13A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,712
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Product details
Overview
IRF6608TR1 from Infineon Technologies (formerly International Rectifier) is a 30V N-channel enhancement-mode power MOSFET in DirectFET® ST package, optimized for synchronous buck converter high-side switches in CPU core DC-DC applications. It delivers 9.0 mΩ RDS(on) at VGS = 10 V, 16 nC total gate charge, and ultra-low 0.7 mm profile with dual-sided cooling capability.
For engineers reviewing the IRF6608TR1 datasheet, IRF6608TR1 pinout, IRF6608TR1 application, or IRF6608TR1 equivalent, key selection criteria include RDS(on) vs. temperature stability, Ciss/Coss ratio for switching loss control, Qgd-to-Qgs balance for dv/dt immunity, and thermal resistance RθJC = 3.0 °C/W for high-power-density board layouts.
Technical Context
The IRF6608TR1 employs trench-gate HEXFET silicon with optimized charge distribution to reduce both conduction loss (via low RDS(on)) and switching loss (via low Qg, Qgd, and package inductance). Its gate threshold voltage (1.0–3.0 V) and negative temperature coefficient (∆VGS(th)/∆TJ = −5.4 mV/°C) support stable parallel operation in multiphase converters.
Designed specifically for synchronous buck topologies, it features enhanced Cdv/dt immunity to prevent false turn-on during high di/dt transitions, validated under VDS = 15 V, ID = 8.8 A, and dV/dt ≥ 100 V/ns conditions per application note AN-1035.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Supports input rails up to 24 V with 25% margin for transient spikes in CPU VRMs. |
| RDS(on) max | 9.0 mΩ @ VGS = 10 V - Enables ≤1.5 W conduction loss at 13 A continuous drain current. |
| Qg | 16 nC - Reduces gate drive power requirement and enables efficient 500 kHz–1 MHz switching. |
| RθJC | 3.0 °C/W - Allows direct thermal interface to heatsink or PCB copper on both top and bottom sides. |
| Coss | 440 pF - Low output capacitance minimizes energy loss during hard-switching transitions. |
| Qgd | 5.3 nC - Critical for controlling Miller-induced turn-on; ratio Qgd/Qgs2 ≈ 3.8 ensures robust dv/dt immunity. |
| ID @ TC = 25°C | 55 A - Sustains peak load currents in multi-phase 12 V → 1.0 V CPU core converters. |
Pinout & Package
IRF6608TR1 uses the DirectFET® ST (Small Size Can, T-Designation) package - a top- and bottom-side metal-can structure with no leads, measuring 4.75 × 3.70 × 0.30 mm (L × W × H), enabling dual-sided cooling and footprint compatibility with MICRO-8 layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad | Drain (D) | Primary high-current path; thermally and electrically connected to PCB ground plane or heatsink. |
| Bottom Metal Pad | Source (S) | Low-impedance return node; forms Kelvin source connection for accurate gate drive referencing. |
| Side Terminal (G) | Gate (G) | Control terminal with low-inductance side-connection; isolated from drain/source by molded polymer barrier. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.7 mm) | Enables stacking of multiple power stages in thin VRM modules without airflow obstruction. |
| Dual-sided cooling interface | Reduces effective thermal resistance by 80% vs. standard SO-8, supporting >60 A/cm² power density. |
| Optimized for synchronous buck FETs | Minimizes RDS(on), Qg, and Qgd simultaneously to lower total loss in high-frequency, high-current topologies. |
| Cdv/dt-induced turn-on immunity | Validated against 100 V/ns transients at VDS = 15 V, ensuring reliable operation in fast-switching CPU VRMs. |
| DirectFET® ST package compatibility | Mounts using standard reflow profiles (vapor phase, IR, convection) per AN-1035 - no special tooling required. |
Applications
| CPU Core Voltage Regulator | GPU Power Delivery Module |
|---|---|
Use Scenario: High-efficiency 12 V input → 0.8–1.3 V output conversion for Intel/AMD desktop/server CPUs operating at >100 A per phase. IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck converter, switching at 300–1000 kHz. Use Value: 9.0 mΩ RDS(on) and 16 nC Qg jointly reduce combined conduction + switching loss to <1.8 W at 13 A/500 kHz. | Use Scenario: Compact, low-profile VRM for discrete or integrated GPU power stages requiring rapid transient response. IC Role / Device Role / Timing Role: Control FET in single- or dual-phase buck stage delivering up to 80 A at 0.9–1.2 V. Use Value: 0.7 mm height allows integration into space-constrained graphics card PCBs while maintaining RθJC = 3.0 °C/W for thermal headroom. |
| ASIC/FPGA Core Supply | High-Density Telecom POL Converter |
Use Scenario: Point-of-load regulation for 7 nm/5 nm ASICs with dynamic current steps exceeding 50 A/µs. IC Role / Device Role / Timing Role: High-side switch in fast-transient buck converter with active voltage positioning (AVP). Use Value: Low Qgd/Qgs2 ratio and body diode trr = 31–47 ns enable clean commutation during aggressive load steps. | Use Scenario: 48 V → 3.3 V or 12 V intermediate bus conversion in compact telecom server power supplies. IC Role / Device Role / Timing Role: Primary switch in half-bridge or buck topology operating at 600 kHz with tight layout constraints. Use Value: Dual-sided cooling supports continuous 35 A operation without forced airflow, reducing system fan noise and cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6613TR1PBF | RDS(on) = 6.8 mΩ @ 10 V; Qg = 22 nC; same DirectFET ST package | Lower RDS(on) but higher gate charge increases switching loss above 500 kHz | Select when conduction loss dominates (e.g., low-frequency, high-current phases); verify gate driver capability for 22 nC. |
| SiR626DP-T1-GE3 | RDS(on) = 8.2 mΩ @ 10 V; Qg = 14.5 nC; PowerPAK® 1212-8 package (0.9 mm height) | Higher profile limits dual-sided cooling; slightly better Qg/RDS(on) ratio | Prefer when legacy layout uses PowerPAK footprints; avoid where board thickness < 1.0 mm is required. |
Compared with IRF6608TR1, IRF6613TR1PBF trades higher gate charge for lower RDS(on), favoring low-frequency efficiency, while SiR626DP-T1-GE3 offers marginally better switching performance in a taller package incompatible with strict 0.7 mm height budgets.
Availability
IRF6608TR1 is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power delivery modules, and high-density telecom POL converters requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.
Supply support for IRF6608TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device design.
The IRF6608TR1 belongs to Infineon's DirectFET® power MOSFET product line, engineered specifically for high-frequency, high-current DC-DC conversion in computing and communications infrastructure where thermal density and switching efficiency are critical.
FAQ
What is the maximum continuous drain current for IRF6608TR1 at 70°C ambient?
At TA = 70°C with standard PCB mounting (1 in² 2 oz Cu), the continuous drain current is 10 A per the Absolute Maximum Ratings table. This derates from 13 A at 25°C due to thermal resistance limitations in still-air conditions; actual current depends on PCB copper area and airflow.
Does IRF6608TR1 require a gate resistor for stability in synchronous buck operation?
Yes - a 2.2–4.7 Ω non-inductive gate resistor is recommended to dampen ringing caused by low package inductance and PCB trace inductance. Values below 2 Ω risk oscillation during turn-on; values above 10 Ω increase switching loss and delay, compromising efficiency at >500 kHz.
Can IRF6608TR1 be used in paralleled configurations?
Yes - its negative RDS(on) temperature coefficient (−5.4 mV/°C for VGS(th)) and matched threshold voltage distribution enable stable current sharing. Use Kelvin source connections and symmetrical gate routing; limit mismatched trace lengths to <1 mm to avoid dynamic imbalance.
Is the body diode of IRF6608TR1 suitable for reverse recovery in synchronous rectification?
No - the body diode is not optimized for reverse recovery; trr = 31–47 ns and Qrr = 33–50 nC indicate moderate recovery behavior. In synchronous buck topologies, it must be actively commutated by the low-side FET before reverse conduction occurs to avoid shoot-through and excess loss.
IRF6608TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric ST
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2120 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.1W (Ta), 42W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ ST
IRF6608TR1 FAQ
1.How can I place an order for IRF6608TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6608TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6608TR1 reliable?
The price and inventory of IRF6608TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6608TR1 is usually 5 days.
3.What payment methods are accepted for IRF6608TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6608TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6608TR1?
IRF6608TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6608TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6608TR1?
For technical support, including IRF6608TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6608TR1 requirements.
6.How does Aetrix verify that IRF6608TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6608TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6608TR1 meets industry standards.
7.What is the process for return or replacement of IRF6608TR1?
All IRF6608TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6608TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6608TR1 part is unused and in its original packaging.
Return procedure for IRF6608TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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