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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7424TRMOSFET P-CH 30V 11A 8SO Infineon Technologies |
9,134 | 0.00 |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Tc) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | 2.5V @ 250µA | 110 nC @ 10 V | ±20V | 4030 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
IRF7451TRMOSFET N-CH 150V 3.6A 8SO Infineon Technologies |
6,887 | 0.00 |
|
Datasheet |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 3.6A (Ta) | 10V | 90mOhm @ 2.2A, 10V | 5.5V @ 250µA | 41 nC @ 10 V | ±30V | 990 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IQE018N06NM6CGSCATMA1TRENCH 40<-<100V Infineon Technologies |
3,437 | 0.00 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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IQE018N06NM6SCATMA1TRENCH 40<-<100V Infineon Technologies |
7,663 | 0.00 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRLR8103VTRPBFMOSFET N-CH 30V 91A DPAK Infineon Technologies |
5,126 | 0.00 |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 91A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 27 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 115W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRLZ24NSTRLPBFMOSFET N-CH 55V 18A D2PAK Infineon Technologies |
4,550 | 0.00 |
|
Datasheet |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IRLR8259TRPBFMOSFET N-CH 25V 57A DPAK Infineon Technologies |
3,207 | 0.00 |
|
Datasheet |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 57A (Tc) | 4.5V, 10V | 8.7mOhm @ 21A, 10V | 2.35V @ 25µA | 10 nC @ 4.5 V | ±20V | 900 pF @ 13 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IPI057N08N3 GMOSFET N-CH 80V 80A TO262-3 Infineon Technologies |
7,516 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 5.7mOhm @ 80A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4750 pF @ 40 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IRL3714ZLMOSFET N-CH 20V 36A TO262 Infineon Technologies |
4,262 | 0.00 |
|
Datasheet |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2 nC @ 4.5 V | ±20V | 550 pF @ 10 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
SPP80N06S2L-06MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
7,020 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 6.3mOhm @ 69A, 10V | 2V @ 180µA | 150 nC @ 10 V | ±20V | 5050 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
