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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7451TR

Name: IRF7451TR
Brand: Infineon Technologies
SKU: IRF7451TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7451TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7451TR.pdf

Description:: MOSFET N-CH 150V 3.6A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:6,887

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Product details

Overview

IRF7451TR from Infineon Technologies (formerly International Rectifier) is a 150V, 3.6A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 90 mΩ R_DS(on) at V_GS = 10 V, low 28 nC total gate charge, and fully characterized C_oss,eff = 180 pF to simplify snubberless flyback and resonant converter design.

For engineers reviewing the IRF7451TR datasheet, IRF7451TR pinout, IRF7451TR application, or IRF7451TR equivalent, key selection criteria include its avalanche-rated 210 mJ single-pulse energy, 7.9 V/ns diode recovery dv/dt capability, and SO-8 thermal resistance (R_θJA = 50 °C/W) for compact power stage layouts.

Technical Context

This HEXFET Power MOSFET uses planar vertical DMOS technology with integrated body diode, enabling unclamped inductive switching up to I_AS = 3.6 A. Its gate threshold voltage (3.0–5.5 V) and low Q_gd/Q_g ratio (13/28 nC) support clean turn-off in synchronous rectification topologies.

The device's C_oss is specified across three bias points (1.0 V, 25 V, 120 V), and its effective output capacitance (C_oss,eff = 180 pF) is derived from 0–120 V integration-critical for ZVS timing prediction in LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - supports 48 V input DC-DC systems with 3× safety margin against transients
R_DS(on) max	0.09 Ω @ V_GS = 10 V, I_D = 2.2 A - enables ≤0.45 W conduction loss at 2.2 A
Q_g typ	28 nC - reduces gate drive power and allows use of low-current drivers (e.g., UCC27531)
C_oss,eff	180 pF - defines hard-switching turn-on loss and ZVS transition time in resonant topologies
E_AS	210 mJ - sustains repetitive unclamped inductive switching in flyback snubberless designs
dv/dt rating	7.9 V/ns - ensures robustness against parasitic ringing during fast commutation
T_J range	−55 to +150 °C - qualified for industrial ambient environments without derating below 70 °C

Pinout & Package

IRF7451TR is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal conduction. The package measures 4.9 × 6.0 mm with 1.27 mm lead pitch and supports reflow soldering up to 300 °C for 10 s.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 6–8 (D)	Drain (parallel-connected)	High-current output node; all eight pins tied internally to drain; primary thermal path to PCB copper
5 (G)	Gate	Control input; requires <30 V absolute max; Miller charge (Q_gd = 13 nC) dominates switching behavior
7 (S)	Source	Power return and reference for gate drive; also serves as body diode cathode

Key Features

Feature	Design Value
Low Q_g/Q_gd ratio	28 nC / 13 nC - improves controllability during hard switching and reduces shoot-through risk
Fully characterized C_oss vs. V_DS	1260 pF @ 1 V, 100 pF @ 120 V - enables accurate loss modeling across full operating range
Avalanche-rated	E_AS = 210 mJ, I_AR = 3.6 A - eliminates need for external clamping in cost-sensitive flyback designs
Lead-free construction	RoHS-compliant, Pb-free plating - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: 12 V input, 1.2 V/100 A output buck converter in 1U server PSU.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch with 500 kHz switching frequency.

Use Value: Low Q_g and R_DS(on) minimize combined conduction and gate loss, achieving >92% efficiency at full load.

Use Scenario: 48 V to 12 V isolated forward converter in factory automation PLC power supply.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling 300 ns dead-time transitions.

Use Value: 7.9 V/ns dv/dt rating prevents false triggering during high di/dt current collapse.

Telecom PoE++ PSE

LED Driver Flyback

Use Scenario: IEEE 802.3bt Type 4 (90 W) power sourcing equipment with four-port controller.

IC Role / Device Role / Timing Role: Secondary-side hot-swap MOSFET controlling inrush into 100 µF bulk capacitor.

Use Value: Avalanche energy rating absorbs capacitive surge without external TVS, reducing BOM count.

Use Scenario: 230 V AC input, 36 V/1.5 A constant-current LED driver for street lighting.

IC Role / Device Role / Timing Role: Primary-side main switch in quasi-resonant flyback with valley switching.

Use Value: C_oss,eff = 180 pF enables precise zero-voltage switching detection at 65 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK150ZFP	1500 V V_DSS, 0.95 Ω R_DS(on), TO-220FP package	Designed for offline SMPS with higher voltage margin; unsuitable for <100 V DC-DC due to excessive R_DS(on)	Select only when primary-side isolation and >600 V transient immunity are required.
SiHFL024R	150 V V_DSS, 0.024 Ω R_DS(on), TO-220AB package, 72 nC Q_g	Lower conduction loss but higher gate drive demand; lacks C_oss,eff characterization and avalanche data	Prefer for high-current, low-frequency (<100 kHz) applications where thermal mass outweighs switching speed.

Compared with STP10NK150ZFP and SiHFL024R, IRF7451TR uniquely balances low Q_g, verified C_oss,eff, and industrial-grade avalanche ruggedness in a space-constrained SO-8 footprint-making it optimal for high-density, high-frequency DC-DC stages where layout area and EMI control are critical.

Availability

IRF7451TR is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and telecom PoE++ PSE designs requiring stable component supply and long-term manufacturability.

Supply support for IRF7451TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The HEXFET® MOSFET product line targets high-efficiency power conversion in computing, telecom, and industrial systems-designed specifically for fast-switching, thermally constrained, and reliability-critical applications.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7451TR supports 2.9 A continuous drain current at T_A = 70°C with V_GS = 10 V, as defined by its thermal derating curve and R_θJA = 50 °C/W. This value assumes 1-inch² copper pad on FR-4 PCB and natural convection cooling-no heatsink required below this current level.

Does IRF7451TR have a specified body diode reverse recovery time?

Yes, trr is specified as 76–110 ns at T_J = 25°C, I_F = 2.2 A, and di/dt = 100 A/µs. This fast recovery supports synchronous rectification in forward and LLC topologies without significant tail current losses.

Can IRF7451TR be used in avalanche mode for repetitive operation?

No-its 210 mJ E_AS rating is for single-pulse conditions only. Repetitive avalanche operation is not characterized or guaranteed; sustained inductive energy must be clamped externally or managed via topology-level ZVS/ZCS techniques.

Is the SO-8 package lead-free and RoHS compliant?

Yes, IRF7451TR carries the "PbF" suffix per Infineon documentation and conforms to RoHS Directive 2011/65/EU. Its termination finish is matte tin, rated for MSL1 per IPC/JEDEC J-STD-020, and compatible with standard lead-free reflow profiles up to 260 °C peak.

IRF7451TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 3.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 990 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7451TR FAQ

1.How can I place an order for IRF7451TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7451TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7451TR reliable?

The price and inventory of IRF7451TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7451TR is usually 5 days.

3.What payment methods are accepted for IRF7451TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7451TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7451TR?

IRF7451TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7451TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7451TR?

For technical support, including IRF7451TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7451TR requirements.

6.How does Aetrix verify that IRF7451TR is sourced from the original manufacturer or authorized distributors?

All IRF7451TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7451TR meets industry standards.

7.What is the process for return or replacement of IRF7451TR?

All IRF7451TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7451TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7451TR part is unused and in its original packaging.

Return procedure for IRF7451TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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