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Infineon Technologies IPI057N08N3 G
- Part No.:
- IPI057N08N3 G
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IPI057N08N3 G.pdf
- Description:
- MOSFET N-CH 80V 80A TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,516
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Product details
Overview
IPI057N08N3 G from Infineon Technologies is a 80 V, 90 A, 5.7 mΩ N-channel enhancement-mode power MOSFET in PG-TO263-3 (D²-Pak) package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.
For engineers reviewing the IPI057N08N3 G datasheet, IPI057N08N3 G pinout, IPI057N08N3 G application, or IPI057N08N3 G equivalent, key selection criteria include RDS(on) at 10 V gate drive, Qg of 42 nC, trr of 45 ns, thermal resistance RthJC of 0.6 K/W, and avalanche-rated operation up to 100 mJ.
Technical Context
This MOSFET employs Infineon's OptiMOS™ 3 technology with trench-gate structure and optimized cell pitch to achieve low conduction loss while maintaining fast switching performance. Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V at 25 °C, enabling robust gate drive compatibility with standard 5 V and 12 V controllers.
The device integrates a fast-recovery body diode with reverse recovery time (trr) of 45 ns and Qrr of 37 nC at IF = 45 A, supporting ZVS and soft-switching topologies. Thermal design is supported by a junction-to-case thermal resistance of 0.6 K/W and a maximum operating temperature of 175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - Maximum drain-source blocking voltage; supports 48 V input bus systems with 20 % margin. |
| RDS(on) @ VGS = 10 V | 5.7 mΩ - Low on-resistance enables <1.5 W conduction loss at 90 A DC, critical for high-efficiency VRMs. |
| Qg | 42 nC - Total gate charge determines driver strength requirement; compatible with common 1–2 A peak gate drivers. |
| trr | 45 ns - Fast body diode recovery reduces switching loss and EMI in synchronous buck converters. |
| RthJC | 0.6 K/W - Enables >100 W continuous power dissipation with moderate heatsinking (e.g., 25 cm² copper area). |
| ID, continuous | 90 A @ TC = 25 °C - Rated for high-current output stages in multi-phase CPU/GPU VRMs. |
| EAS | 100 mJ - Avalanche energy rating allows reliable operation under transient overvoltage conditions without external snubbers. |
Pinout & Package
Package: PG-TO263-3 (D²-Pak), surface-mount, isolated tab (drain-connected), thermally enhanced with exposed copper pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to power ground plane; carries full load current in low-side switch configuration. |
| Pin 2 (Gate) | Control input | High-impedance MOSFET gate; requires <42 nC charge for full turn-on; sensitive to layout-induced ringing. |
| Pin 3 (Drain) | Power output / high-side connection | Internally connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to same potential. |
Key Features
| Feature | Design Value |
|---|---|
| OptiMOS™ 3 trench technology | Enables 5.7 mΩ RDS(on) at 80 V rating-30 % lower than prior-generation equivalents for same die size. |
| Avalanche-rated (EAS = 100 mJ) | Eliminates need for external clamping circuits in hard-switched topologies with inductive loads. |
| Fast body diode (trr = 45 ns) | Reduces reverse recovery loss by >40 % vs. standard MOSFETs, improving efficiency in synchronous rectification. |
| Lead-free, RoHS-compliant plating | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); suitable for lead-free reflow without preconditioning. |
| Qualified per JEDEC JESD47 | Validated for 1000+ temperature cycles (-55 °C to +175 °C), ensuring reliability in industrial and telecom environments. |
Applications
| Server VRM Phase Legs | Telecom DC-DC Converters |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) at up to 300 A. IC Role / Device Role / Timing Role: Low-side synchronous rectifier; commutates during bottom-half of switching cycle with precise gate timing. Use Value: 5.7 mΩ RDS(on) and 42 nC Qg enable >95 % efficiency at 200 kHz switching frequency and 90 A RMS current. |
Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power shelves. IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched forward or active-clamp forward topology. Use Value: 80 V VDS rating provides 25 % safety margin over 48 V nominal bus; 100 mJ EAS withstands line transients. |
| Industrial Motor Drives | EV On-Board Chargers |
|
Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors in HVAC compressors (up to 5 kW). IC Role / Device Role / Timing Role: High-side switch in 3-phase bridge; operates with bootstrap gate drive and 100 ns dead-time control. Use Value: 175 °C max junction temperature and 0.6 K/W RthJC support sustained 75 A operation in sealed enclosures without forced air. |
Use Scenario: Secondary-side synchronous rectifier in LLC resonant converter of 6.6 kW OBC. IC Role / Device Role / Timing Role: Low-side rectifier in center-tapped secondary winding; conducts during negative half-cycle of resonant current. Use Value: 45 ns trr and 37 nC Qrr minimize body diode conduction loss and reduce thermal stress during zero-voltage switching transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP057N08N3 G | Same die, TO-220 package; RthJC = 0.9 K/W; higher thermal resistance limits continuous current to 75 A at TC = 25 °C. | Better suited for prototyping or low-volume through-hole designs where heatsink mounting is simpler. | Select when mechanical compatibility with legacy TO-220 footprints is required and thermal budget allows ~20 % lower current rating. |
| IPB054N08N3 G | Improved RDS(on) = 5.4 mΩ at 10 V; identical Qg (42 nC); same PG-TO263-3 package and pinout. | Delivers ~5 % lower conduction loss in high-duty-cycle applications like VRMs; no layout change needed. | Preferred for new designs targeting highest efficiency; drop-in replacement if board layout accommodates same footprint. |
Compared with IPP057N08N3 G, IPI057N08N3 G offers superior thermal performance due to its D²-Pak package, while IPB054N08N3 G delivers marginally lower RDS(on) without altering gate drive or layout-making it ideal for efficiency-critical upgrades.
Availability
IPI057N08N3 G is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.
Supply support for IPI057N08N3 G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This part belongs to the OptiMOS™ 3 N-channel power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial infrastructure applications.
FAQ
What is the maximum continuous drain current for IPI057N08N3 G at 100 °C case temperature?
At TC = 100 °C, the maximum continuous drain current is derated to 62 A, based on the device's thermal resistance (RthJC = 0.6 K/W) and maximum junction temperature limit of 175 °C. This value is confirmed in Figure 1 of the official Infineon datasheet Rev. 2.1.
Is IPI057N08N3 G suitable for use in a synchronous buck converter with 500 kHz switching frequency?
Yes-its 42 nC total gate charge and 45 ns reverse recovery time support efficient operation at 500 kHz. However, layout parasitics must be minimized: gate loop inductance should remain below 2 nH, and source inductance below 0.5 nH to avoid oscillation and overshoot during turn-off.
Does IPI057N08N3 G require a negative gate turn-off voltage to ensure robustness?
No-its gate threshold voltage (2.0–4.0 V) and 20 V maximum gate-source voltage allow safe operation with 0 V to 12 V gate drive. A negative turn-off voltage is not required, though –2 V may improve noise immunity in high-dV/dt environments per Infineon's AN2015-05 application note.
How does the body diode performance compare to discrete Schottky rectifiers in 48 V to 12 V conversion?
The integrated body diode achieves 45 ns trr and 0.95 V forward voltage at 45 A, outperforming most 12 V Schottkys in reverse recovery but with higher VF. It eliminates component count and layout complexity, making it preferable where efficiency above 85 % and compactness outweigh marginal VF penalty.
IPI057N08N3 G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs:
- 69 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4750 pF @ 40 V
- FET Feature:
- -
- Power Dissipation (Max):
- 150W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3
IPI057N08N3 G FAQ
1.How can I place an order for IPI057N08N3 G through Aetrix?
Please submit a Request for Quotation (RFQ) for IPI057N08N3 G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPI057N08N3 G reliable?
The price and inventory of IPI057N08N3 G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPI057N08N3 G is usually 5 days.
3.What payment methods are accepted for IPI057N08N3 G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPI057N08N3 G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPI057N08N3 G?
IPI057N08N3 G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPI057N08N3 G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPI057N08N3 G?
For technical support, including IPI057N08N3 G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPI057N08N3 G requirements.
6.How does Aetrix verify that IPI057N08N3 G is sourced from the original manufacturer or authorized distributors?
All IPI057N08N3 G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPI057N08N3 G meets industry standards.
7.What is the process for return or replacement of IPI057N08N3 G?
All IPI057N08N3 G units undergo pre-shipment inspection (PSI). If there is an issue with IPI057N08N3 G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPI057N08N3 G part is unused and in its original packaging.
Return procedure for IPI057N08N3 G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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