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Infineon Technologies IRLR8103VTRPBF
- Part No.:
- IRLR8103VTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR8103VTRPBF.pdf
- Description:
- MOSFET N-CH 30V 91A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,126
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Product details
Overview
IRLR8103VTRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 30 V VDS, 7.9 mΩ RDS(on) @ VGS = 4.5 V, 27 nC total gate charge, and 91 A continuous drain current at TC = 25°C. It is optimized for synchronous buck converters in CPU core DC-DC applications where low conduction and switching losses are critical.
For engineers reviewing the IRLR8103VTRPBF datasheet, IRLR8103VTRPBF pinout, IRLR8103VTRPBF application, or IRLR8103VTRPBF equivalent, key selection criteria include RDS(on)/QG trade-off, body diode Qrr = 103 nC, Ciss = 2672 pF, and thermal resistance RθJC = 1.09°C/W - all verified under synchronous FET operating conditions per IRF application notes.
Technical Context
This MOSFET employs HEXFET® technology with optimized charge distribution to minimize QSW (12 nC) and QOSS (29 nC), directly reducing turn-off loss and voltage-dependent stored energy in high-frequency synchronous rectification. Its 1.0 V to 3.0 V gate threshold enables robust 4.5 V logic-level drive compatibility.
The device features a fully characterized body diode with VSD = 0.9–1.3 V @ IS = 15 A and reverse recovery charge Qrr = 103 nC under di/dt = 700 A/µs, supporting efficient freewheeling in non-overlap-controlled buck stages without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 5 V and 12 V input rails in point-of-load converters |
| RDS(on) | 7.9 mΩ @ VGS = 4.5 V - Enables <1 W conduction loss at 15 A, reducing heatsink requirements |
| QG | 27 nC - Low gate drive energy supports >1 MHz switching without excessive driver power dissipation |
| QSW | 12 nC - Minimizes turn-off transition loss in control FET role of dual-MOSFET buck stage |
| RθJC | 1.09 °C/W - Allows >60 W power dissipation with 65°C temperature rise above case in PCB-mounted D-Pak |
| QOSS | 29 nC - Reduces capacitive turn-on loss during hard-switched transitions in synchronous rectifier mode |
| VGS(th) | 1.0–3.0 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers, avoiding shoot-through risk |
Pinout & Package
D-Pak (TO-252) surface-mount package with exposed drain pad for thermal performance; 3-terminal configuration optimized for high-current PCB routing and vapor-phase reflow.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (body diode cathode) | Common return path for load current; tied to ground plane in buck low-side layout |
| Pin 2 (Gate) | Control electrode | High-impedance input requiring <3.1 Ω series gate resistor to damp ringing and limit dV/dt-induced turn-on |
| Pin 3 (Drain) | Power output / body diode anode | Connected to switch node; large copper area required for thermal conduction and EMI reduction |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Guaranteed turn-on at VGS = 4.5 V, enabling direct interface with PWM controllers like IR35201 or UCD92xx |
| Low QSW/RDS(on) ratio | 12 nC / 7.9 mΩ = 1520 nC·Ω - superior figure-of-merit for high-efficiency synchronous rectification |
| 100% RG tested | Gate resistance 0.8–3.1 Ω ensures consistent switching speed and EMI profile across production lots |
| Lead-free and RoHS-compliant | Meets JEDEC J-STD-020 reflow profile for Pb-free soldering; no post-process plating required |
Applications
| CPU Core Voltage Regulator | GPU Power Delivery |
|---|---|
Use Scenario: Synchronous buck converter supplying 0.8–1.5 V @ up to 200 A to modern x86 or ARM-based processors. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, conducting during bottom-switch conduction phase with precise dead-time control. Use Value: 7.9 mΩ RDS(on) reduces conduction loss by >30% vs. legacy 12 mΩ devices, lowering VRM temperature rise and improving transient response. | Use Scenario: Multi-phase VRM powering discrete graphics processing units with dynamic load steps exceeding 100 A/µs. IC Role / Device Role / Timing Role: High-current, low-QOSS synchronous FET handling peak currents up to 91 A per phase in parallel configurations. Use Value: 29 nC QOSS minimizes voltage-dependent turn-on loss during light-load discontinuous conduction mode (DCM), sustaining >92% efficiency at 10% load. |
| Server Memory Regulator | AI Accelerator Power Stage |
Use Scenario: Point-of-load converter delivering 1.2 V to DDR5 memory modules with tight regulation and low noise. IC Role / Device Role / Timing Role: Control FET in high-side position, switched at 500 kHz–1 MHz with fast 10 ns turn-on delay and 9 ns rise time. Use Value: 27 nC QG allows clean gate drive with 2 A peak driver ICs (e.g., IR2110), eliminating need for external gate transformers. | Use Scenario: High-density power stage for FPGA or ASIC-based AI inference accelerators requiring sub-1 V rail stability. IC Role / Device Role / Timing Role: Dual-role MOSFET functioning as both control and synchronous rectifier depending on phase interleaving scheme. Use Value: Matched RDS(on) and QG enable identical thermal and switching behavior across phases, simplifying thermal design and current balancing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR8721PBF | RDS(on) = 5.8 mΩ @ 4.5 V, QG = 32 nC, VDS = 30 V | Lower RDS(on) but higher QG increases drive loss above 1 MHz | Prefer for <500 kHz applications prioritizing conduction loss over switching loss |
| SI7850DP-T1-GE3 | RDS(on) = 8.5 mΩ @ 4.5 V, QG = 22 nC, VDS = 30 V, SO-8 package | Smaller footprint but higher RθJA limits power handling in compact layouts | Prefer when board space is constrained and thermal vias cannot support D-Pak copper area |
Compared with IRLR8103VTRPBF, IRLR8721PBF trades 27% lower RDS(on) for 19% higher QG, while SI7850DP-T1-GE3 offers 19% lower gate charge in SO-8 but sacrifices 7% on-resistance and thermal capability - making IRLR8103VTRPBF optimal for balanced high-frequency, high-current buck designs.
Availability
IRLR8103VTRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery systems, and AI accelerator power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for IRLR8103VTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's power MOSFET innovation.
The IRLR8103VTRPBF belongs to the HEXFET® logic-level N-channel MOSFET product line, engineered specifically for high-efficiency, high-current synchronous buck converters in computing and datacenter power applications.
FAQ
What is the maximum continuous drain current at 90°C case temperature?
The IRLR8103VTRPBF supports 63 A continuous drain current at TC = 90°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package under sustained high-power operation, and assumes adequate PCB copper area and airflow per IRF Application Note AN-1044.
Does this MOSFET require a gate resistor, and what value is recommended?
Yes - a series gate resistor is required to control dv/dt and suppress oscillation. Based on measured RG = 0.8–3.1 Ω and typical gate drive strength, a 5–10 Ω resistor is recommended for 500 kHz–1 MHz operation to balance switching speed and EMI, per IRF AN-1001 guidelines.
Can IRLR8103VTRPBF be used in avalanche-rated applications?
No - the datasheet does not specify avalanche energy rating (EAS) or ruggedness testing. It is designed for clamped inductive switching only, and operation outside SOA limits (Fig. 8) may cause irreversible failure. Use only in circuits with active voltage clamping or synchronous rectification.
Is the body diode suitable for reverse recovery in hard-switched topologies?
Its body diode has Qrr = 103 nC and trr ~ 45 ns under di/dt = 700 A/µs, making it usable in synchronous buck freewheeling, but not recommended for hard-switched flyback or forward converters where uncontrolled reverse recovery causes voltage spikes and loss.
IRLR8103VTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 91A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2672 pF @ 16 V
- FET Feature:
- -
- Power Dissipation (Max):
- 115W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR8103VTRPBF FAQ
1.How can I place an order for IRLR8103VTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR8103VTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR8103VTRPBF reliable?
The price and inventory of IRLR8103VTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8103VTRPBF is usually 5 days.
3.What payment methods are accepted for IRLR8103VTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8103VTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR8103VTRPBF?
IRLR8103VTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR8103VTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR8103VTRPBF?
For technical support, including IRLR8103VTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8103VTRPBF requirements.
6.How does Aetrix verify that IRLR8103VTRPBF is sourced from the original manufacturer or authorized distributors?
All IRLR8103VTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8103VTRPBF meets industry standards.
7.What is the process for return or replacement of IRLR8103VTRPBF?
All IRLR8103VTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8103VTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR8103VTRPBF part is unused and in its original packaging.
Return procedure for IRLR8103VTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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