Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8259TRPBF

Name: IRLR8259TRPBF
Brand: Infineon Technologies
SKU: IRLR8259TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLR8259TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8259TRPBF.pdf

Description:: MOSFET N-CH 25V 57A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,207

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLR8259TRPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, rated for 25V V_DSS, 8.7mΩ R_DS(on) at V_GS = 4.5V, and 6.8nC total gate charge. It serves as a high-efficiency synchronous rectifier or main switch in high-frequency DC-DC converters for CPU core power delivery and telecom systems.

For engineers reviewing the IRLR8259TRPBF datasheet, IRLR8259TRPBF pinout, IRLR8259TRPBF application, or IRLR8259TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5V drive, ultra-low gate impedance (2.2Ω typ), fully characterized avalanche capability (67mJ E_AS), and RoHS-compliant lead-free construction in D-Pak thermal package.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted channel geometry to achieve sub-10mΩ on-resistance at logic-level gate drive. Its gate charge profile (Q_gs2 = 1.1nC, Q_gd = 2.4nC) supports fast switching with minimal Miller plateau duration in synchronous buck topologies.

Thermal design is enabled by low R_θJC (3.15°C/W) and integrated body diode with 17ns typical reverse recovery time (t_rr) and 15nC Q_rr, allowing efficient operation in hard-switched and resonant converter stages without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25V - Maximum blocking voltage compatible with 3.3V/5V logic-supplied gate drivers in point-of-load converters
R_DS(on) @ V_GS = 4.5V	8.7mΩ max - Enables <1W conduction loss at 17A DC output current in 12V input buck stages
Q_g	6.8nC - Supports >1MHz switching with moderate gate driver strength (e.g., IR11672)
t_rr	17ns typ - Minimizes commutation loss and voltage overshoot during synchronous rectification
E_AS	67mJ - Withstands single-pulse inductive energy from 200A/µs di/dt transients without failure
R_θJC	3.15°C/W - Allows 24W continuous dissipation with 75°C case temperature rise under PCB heatsinking

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Pin/Terminal	Circuit Role	Design Meaning
G	Control electrode	Receives gate drive signal; threshold voltage 1.35–2.35V enables direct microcontroller GPIO interface
D	High-current drain node	Connected to PCB copper pour for heat sinking; electrically tied to exposed metal tab
S	Source reference terminal	Provides return path for load current; used as ground reference for gate drive in low-side configuration

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	Enables use with 3.3V/5V controllers without level-shifting, reducing BOM count in compact DC-DC modules
Fully characterized avalanche rating	67mJ single-pulse E_AS verified per JEDEC JESD24-11, eliminating need for external snubbers in flyback or LLC primary switches
Low gate-to-drain charge (Q_gd)	2.4nC minimizes Miller-induced shoot-through risk and improves dv/dt immunity in high-side half-bridge layouts
Lead-free and RoHS compliant	Meets IPC-J-STD-020D reflow profile requirements up to 260°C peak, supporting automated SMT assembly

Applications

Server VRM Core Switching

Telecom 48V-to-12V Isolated DC-DC

Use Scenario: High-current, high-efficiency step-down conversion for Intel/AMD CPU cores delivering up to 200A at <1.2V.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; switched at 300–1000kHz with interleaved timing.

Use Value: 8.7mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 12mΩ devices, directly improving VRM efficiency at 150A load.

Use Scenario: Secondary-side synchronous rectification in forward or active-clamp forward converters powering base station RF modules.

IC Role / Device Role / Timing Role: Output rectifier driven by transformer-coupled gate signals; operates in hard-switched mode with 100–500kHz frequency.

Use Value: 17ns t_rr and 15nC Q_rr suppress voltage spikes during diode commutation, enabling >94% full-load efficiency at 48V input.

Industrial PLC Power Supply

Automotive ADAS Camera Power Module

Use Scenario: 24V-to-5V/3.3V intermediate bus conversion in programmable logic controller backplanes with strict thermal limits.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck regulator; thermally coupled to aluminum-core PCB.

Use Value: 3.15°C/W R_θJC allows 24W continuous operation with <75°C junction rise, eliminating need for forced air cooling.

Use Scenario: Compact 12V-to-1.8V point-of-load supply for image sensor and ISP in automotive surround-view camera modules.

IC Role / Device Role / Timing Role: High-side switch in monolithic buck IC companion or discrete controller solution; subjected to automotive load-dump transients.

Use Value: 25V V_DSS with 100% production-tested avalanche withstand ensures reliability under ISO 7637-2 Pulse 5a conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8729PbF	Lower R_DS(on) (5.2mΩ @ 4.5V), higher Q_g (12.5nC), same D-Pak package	Better conduction loss but slower switching; suited for <500kHz applications where thermal margin dominates	Select when optimizing for steady-state efficiency over switching loss in fixed-frequency designs
SI7850DP-T1-GE3	Higher V_DSS (30V), similar R_DS(on) (8.5mΩ @ 4.5V), lower Q_gd (1.8nC)	Improved voltage margin for 24V industrial inputs; better dv/dt noise immunity in noisy environments	Prefer when system input may exceed 25V or EMI robustness is critical in motor-control adjacent circuits

Compared with IRLR8259TRPBF, IRLR8729PbF trades higher gate charge for lower conduction loss, while SI7850DP-T1-GE3 offers wider voltage headroom and improved switching noise immunity-both require layout review for gate drive loop inductance due to differing Q_gd profiles.

Availability

IRLR8259TRPBF is available at Aetrix Electronics and suitable for server VRM core switching, telecom isolated DC-DC converters, and industrial PLC power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRLR8259TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® logic-level power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR8259TRPBF supports 24A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. At 4.5V gate drive, derating applies due to higher R_DS(on); actual usable current depends on PCB copper area and ambient airflow, typically limited to ~17A for safe thermal operation.

Does this MOSFET require a gate resistor for stability in high-frequency buck converters?

Yes-a 1–5Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 2.2Ω intrinsic gate resistance and 900pF C_iss. Values below 1Ω increase risk of oscillation above 500kHz; values above 5Ω degrade turn-on speed and increase switching loss disproportionately.

Can IRLR8259TRPBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (18mV/°C dV_BR/dT_J) ensures inherent current sharing. For reliable paralleling, match gate drive loop inductance within ±0.5nH, use Kelvin source connections, and maintain identical thermal mounting for all devices to avoid thermal runaway.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode is fully characterized with t_rr = 17ns (typ), Q_rr = 15nC (typ), and soft recovery behavior confirmed in Fig. 7 and Fig. 15. It supports synchronous rectification up to 1MHz without external diode supplementation, provided gate drive timing avoids cross-conduction during dead-time intervals.

IRLR8259TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.7mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 900 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8259TRPBF FAQ

1.How can I place an order for IRLR8259TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8259TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8259TRPBF reliable?

The price and inventory of IRLR8259TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8259TRPBF is usually 5 days.

3.What payment methods are accepted for IRLR8259TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8259TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8259TRPBF?

IRLR8259TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8259TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8259TRPBF?

For technical support, including IRLR8259TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8259TRPBF requirements.

6.How does Aetrix verify that IRLR8259TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR8259TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8259TRPBF meets industry standards.

7.What is the process for return or replacement of IRLR8259TRPBF?

All IRLR8259TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8259TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8259TRPBF part is unused and in its original packaging.

Return procedure for IRLR8259TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.