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Infineon Technologies SPP80N06S2L-06
- Part No.:
- SPP80N06S2L-06
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SPP80N06S2L-06.pdf
- Description:
- MOSFET N-CH 55V 80A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,020
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Product details
Overview
SPP80N06S2L-06 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET rated for 55 V VDS, 6.3 mΩ RDS(on) at VGS = 10 V and 69 A, 80 A continuous drain current (TC = 25 °C), and 175 °C maximum junction temperature. It is avalanche-rated, dv/dt-rated, and optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.
For engineers reviewing the SPP80N06S2L-06 datasheet, SPP80N06S2L-06 pinout, SPP80N06S2L-06 application, or SPP80N06S2L-06 equivalent, key selection criteria include RDS(on) at 4.5 V gate drive, single-pulse avalanche energy (530 mJ), thermal resistance (RthJC = 0.4–0.6 K/W), and diode forward voltage (VSD = 0.9–1.3 V at 80 A).
Technical Context
This OptiMOS™ device uses trench-gate superjunction technology to achieve low on-resistance with fast switching performance. Its gate threshold voltage (1.2–2.0 V) enables direct logic-level drive from 3.3 V or 5 V controllers, and its 6 kV/µs dv/dt rating supports robust operation in noisy inductive loads.
The integrated body diode exhibits low reverse recovery charge (Qrr = 92–115 nC) and fast trr (60–76 ns), making it suitable for synchronous rectification and freewheeling in hard-switched topologies. Thermal design is enabled by a low RthJC and validated SOA curves up to 1 ms.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with margin. |
| RDS(on) @ VGS = 10 V | 4.8–6.3 mΩ - Enables <1.5 W conduction loss at 80 A, critical for high-current power stages. |
| RDS(on) @ VGS = 4.5 V | 6.1–8.4 mΩ - Ensures usable on-resistance under logic-level gate drive, reducing driver complexity. |
| EAS | 530 mJ - Single-pulse avalanche energy at ID = 80 A, VDD = 25 V; validates ruggedness in inductive turn-off. |
| Qg | 114–150 nC - Total gate charge determines driver power requirement and switching speed trade-off. |
| VSD | 0.9–1.3 V @ IF = 80 A - Low body diode forward drop reduces freewheeling losses in buck or half-bridge. |
| ZthJC | 0.4–0.6 K/W - Junction-to-case thermal resistance enables high-power dissipation with standard heatsinking. |
Pinout & Package
Package: TO-220-3-1 (P-TO220-3-1), through-hole, isolated tab, drain-connected tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Reference node for gate drive; connects to power ground or low-side return path. |
| Pin 2 (Gate) | Control input | High-impedance MOSFET gate requiring low-inductance layout to minimize ringing during switching. |
| Pin 3 (Drain) | Power output / high-side switch node | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5 V, eliminating need for gate boosters in 3.3 V/5 V controller designs. |
| Avalanche-rated | Guaranteed single-pulse EAS = 530 mJ supports reliable operation under inductive switching stress without external snubbers. |
| 175 °C Tjmax | Enables high ambient temperature operation (e.g., enclosed industrial enclosures) without derating beyond datasheet curves. |
| Low Qgd/Qg ratio | Qgd = 38–60 nC of total Qg = 114–150 nC - improves Miller immunity and reduces switching instability risk. |
| Optimized body diode | Qrr = 92–115 nC and trr = 60–76 ns enable efficient synchronous rectification and reduce diode recovery losses. |
Applications
| Industrial Motor Drives | Server PSU Primary Switches |
|---|---|
Use Scenario: High-current half-bridge leg in 48 V BLDC motor inverters driving fans or pumps. IC Role / Device Role / Timing Role: Low-side switching element handling 80 A continuous current with fast turn-on/off for PWM commutation. Use Value: Low RDS(on) minimizes I²R losses at full load; 175 °C rating ensures reliability in sealed motor housings. |
Use Scenario: Primary-side switch in LLC resonant converter for 1 kW server power supply. IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable power transistor operating at 100–300 kHz with 55 V blocking capability. Use Value: Low Ciss (3800–5050 pF) and controlled Qg support stable high-frequency operation; avalanche rating handles transient overvoltage. |
| Telecom DC-DC Converters | EV Onboard Charger Stages |
Use Scenario: Step-down (buck) regulator supplying 12 V/60 A to base station control boards. IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage. Use Value: Low VSD and fast trr reduce conduction and recovery losses, improving efficiency above 95% at full load. |
Use Scenario: Isolated DC-DC stage in bidirectional OBC converting 400 V battery to 12 V auxiliary supply. IC Role / Device Role / Timing Role: High-side switch in active clamp flyback or phase-shifted full-bridge topology. Use Value: Robust dv/dt rating (6 kV/µs) prevents false turn-on in high dV/dt environments; RthJC ≤ 0.6 K/W simplifies thermal interface design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFB4115PBF | RDS(on) = 5.5 mΩ @ 10 V, but VGS(th) = 2.0–4.0 V - requires higher gate voltage for full enhancement. | Less suitable for 3.3 V logic drive; better for 12 V gate drivers in legacy telecom designs. | Choose when gate drive voltage ≥ 8 V is available and lower RDS(on) is prioritized over logic compatibility. |
| STP80NF55-08 | RDS(on) = 8.0 mΩ @ 10 V, no specified dv/dt rating, EAS = 470 mJ - lower ruggedness margin. | Limited use in high-di/dt motor drives; acceptable in low-cost SMPS where avalanche stress is minimal. | Choose for cost-sensitive industrial PSUs where 55 V rating and 80 A current meet requirements but extreme ruggedness is not required. |
Compared with IRFB4115PBF and STP80NF55-08, SPP80N06S2L-06 uniquely combines logic-level drive, 6 kV/µs dv/dt immunity, and 530 mJ EAS - enabling compact, robust, and driver-simple designs in demanding industrial and telecom power stages.
Availability
SPP80N06S2L-06 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, telecom DC-DC converters, and EV onboard charger stages requiring stable component supply and long-term manufacturability.
Supply support for SPP80N06S2L-06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
SPP80N06S2L-06 belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered for high-current, high-efficiency switching in industrial and computing power conversion systems.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
At TC = 100 °C, the maximum continuous drain current is 52 A, per the ID vs. TC derating curve on page 4 of the datasheet. This reflects thermal limitation due to reduced heat dissipation capacity at elevated case temperatures, not electrical degradation.
Is SPP80N06S2L-06 suitable for synchronous rectification?
Yes - its low VSD (0.9–1.3 V at 80 A) and fast reverse recovery (trr = 60–76 ns, Qrr = 92–115 nC) make it well-suited for synchronous rectification in buck, forward, and LLC converters where body diode conduction must be minimized.
Does this MOSFET require a gate resistor for stability?
Yes - a gate resistor (typically 1.6 Ω, as used in the datasheet's switching time test conditions) is recommended to dampen gate oscillation, control dV/dt, and limit peak gate current. Layout inductance and driver strength determine optimal value, but 1–10 Ω is typical for this device.
Can SPP80N06S2L-06 replace SPB80N06S2L-06 in a PCB design?
No - SPB80N06S2L-06 uses TO-263-3-2 (D²PAK) surface-mount packaging, while SPP80N06S2L-06 uses TO-220-3-1 through-hole packaging. Footprint, thermal mounting, and mechanical retention differ; direct replacement requires board redesign and requalification.
SPP80N06S2L-06 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.3mOhm @ 69A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 180µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5050 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
SPP80N06S2L-06 FAQ
1.How can I place an order for SPP80N06S2L-06 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPP80N06S2L-06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPP80N06S2L-06 reliable?
The price and inventory of SPP80N06S2L-06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N06S2L-06 is usually 5 days.
3.What payment methods are accepted for SPP80N06S2L-06?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N06S2L-06 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPP80N06S2L-06?
SPP80N06S2L-06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPP80N06S2L-06 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPP80N06S2L-06?
For technical support, including SPP80N06S2L-06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N06S2L-06 requirements.
6.How does Aetrix verify that SPP80N06S2L-06 is sourced from the original manufacturer or authorized distributors?
All SPP80N06S2L-06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N06S2L-06 meets industry standards.
7.What is the process for return or replacement of SPP80N06S2L-06?
All SPP80N06S2L-06 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N06S2L-06, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPP80N06S2L-06 part is unused and in its original packaging.
Return procedure for SPP80N06S2L-06:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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