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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSZ0702LSATMA1

Name: BSZ0702LSATMA1
Brand: Infineon Technologies
SKU: BSZ0702LSATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSZ0702LSATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: BSZ0702LSATMA1.pdf

Description:: MOSFET N-CH 60V 17A/40A TSDSON

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSZ0702LSATMA1 from Infineon Technologies is an N-channel logic-level MOSFET optimized for high-frequency switching in USB PD and fast-charging applications, featuring 60 V V_DS, 4.0 mΩ R_DS(on) at V_GS = 10 V, 40 A continuous drain current, and 32 nC Q_OSS. It uses TSDSON-8 FL (Thin Small Outline No-Lead) package with exposed drain pad for enhanced thermal performance.

For engineers reviewing the BSZ0702LSATMA1 datasheet, BSZ0702LSATMA1 pinout, BSZ0702LSATMA1 application, or BSZ0702LSATMA1 equivalent, key selection criteria include low gate charge (18 nC), superior thermal resistance (R_thJC = 1.1 K/W), avalanche ruggedness (117 mJ E_AS), and logic-level drive compatibility down to 4.5 V.

Technical Context

This OptiMOSTM power transistor employs trench-gate superjunction technology to achieve low R_DS(on) × Q_G figure-of-merit (≈72 mΩ·nC), enabling efficient synchronous rectification and high-side/low-side switching in DC-DC converters. Its 100% avalanche-tested construction ensures robustness under inductive load switching.

The device integrates a fast-recovery body diode with t_rr = 24–48 ns and Q_rr = 11–22 nC, supporting ZVS/ZCS topologies. Gate plateau voltage of 2.7 V enables stable turn-on control across temperature, while V_GS(th) = 1.1–2.3 V ensures reliable logic-level activation without external level shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for 48 V system rails and transient overvoltage tolerance
R_DS(on), max	4.0 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 20 A, critical for compact chargers
I_D, cont	40 A at T_C = 25 °C - Supports high-current output stages in 65–100 W USB-C adapters
Q_G	18 nC (0–4.5 V) - Low gate drive power requirement for 500 kHz–1 MHz switching frequencies
E_AS	117 mJ - Confirmed single-pulse avalanche energy supports unclamped inductive switching
R_thJC	1.1 K/W - Enables >60 W power dissipation with minimal case-to-heatsink ΔT in surface-mount layout
t_rr	24–48 ns - Fast body diode recovery reduces switching losses in synchronous buck and LLC resonant converters

Pinout & Package

BSZ0702LSATMA1 is housed in PG-TSDSON-8 FL (Thin Small Outline No-Lead, 3.3 mm × 3.3 mm, 0.65 mm pitch), with thermally enhanced exposed drain pad on bottom side for PCB heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Drain connection (common source configuration)	All eight pins are internally connected to drain; provides low-inductance, high-current path and thermal interface
Source (pins 1–3, 5–7)	Source node (shared with drain pins via internal routing)	Not externally accessible - source is bonded to die backside and tied to drain terminals per TSDSON-8 FL layout
G (pin 4)	Gate terminal	Single gate input with 1.6–2.4 Ω internal gate resistance; requires <20 nC drive for full enhancement

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V (R_DS(on) ≤ 5.6 mΩ), eliminating need for gate driver ICs in low-voltage control circuits
100% avalanche tested	Each unit validated for 117 mJ single-pulse avalanche energy, ensuring reliability in flyback and boost converter primary switches
Superior thermal resistance	R_thJC = 1.1 K/W enables >69 W power dissipation at T_C = 25 °C, reducing heatsink size in space-constrained adapters
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU - suitable for consumer electronics and medical-grade power supplies
Optimized for chargers	Low Q_g/Q_oss ratio (18/32 nC) minimizes switching loss during light-load burst mode operation in USB PD protocols

Applications

USB-C Power Delivery Adapters

Server VRM High-Side Switches

Use Scenario: 100 W dual-port USB-C charger with synchronous rectification and active clamp flyback topology.

IC Role / Device Role: Primary-side high-side switch handling 60 V/20 A pulsed drain current with ZVS capability.

Use Value: 4.0 mΩ R_DS(on) and 24 ns t_rr reduce conduction + switching losses by 18% vs. legacy 6.5 mΩ MOSFETs at 500 kHz.

Use Scenario: 48 V input to 12 V/100 A server point-of-load (POL) converter using multiphase buck architecture.

IC Role / Device Role: High-side power switch in each phase leg, driven by integrated gate driver with 4.5 V logic interface.

Use Value: 1.1 K/W R_thJC allows direct copper pour mounting, maintaining T_j < 110 °C at full load without forced air.

Industrial Motor Drive Half-Bridges

Automotive DC-DC Converters

Use Scenario: 24 V BLDC motor controller with 3-phase inverter stage operating up to 20 kHz PWM frequency.

IC Role / Device Role: Low-side switch in half-bridge leg, leveraging fast body diode for freewheeling current commutation.

Use Value: 11–22 nC Q_rr and 24–48 ns t_rr minimize shoot-through risk and reverse recovery loss during dead-time transitions.

Use Scenario: 12 V to 48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicle architectures.

IC Role / Device Role: Synchronous rectifier in secondary-side full-bridge, conducting up to 40 A continuous with low forward drop.

Use Value: V_SD = 0.80–1.2 V at 20 A enables <0.5 W conduction loss, improving efficiency by 1.2% at 5 kW peak power.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB070N06LGATMA1	Same 60 V rating, but lower R_DS(on) (3.0 mΩ), higher Q_G (24 nC), larger TSDSON-8 footprint (5×6 mm)	Better conduction loss but slower switching; suited for lower-frequency (<300 kHz), higher-current (>60 A) industrial inverters	Select when thermal margin exceeds electrical loss budget and board area permits larger package
SI7157DP-T1-GE3	60 V, 4.5 mΩ, 16 nC Q_G, SO-8 package with higher R_thJA (62 K/W vs. 1.1 K/W)	Limited to <10 W continuous dissipation; requires external heatsink for >15 A operation	Prefer for prototyping or low-volume designs where through-hole or SO-8 rework compatibility is required

Compared with IPB070N06LGATMA1 and SI7157DP-T1-GE3, BSZ0702LSATMA1 delivers optimal balance of ultra-low R_DS(on), minimal gate charge, and industry-leading thermal performance in a compact 3.3×3.3 mm footprint-making it the preferred choice for high-density, high-frequency USB-C and POL applications.

Availability

BSZ0702LSATMA1 is available at Aetrix Electronics and suitable for USB-C power delivery adapters, server VRMs, industrial motor drives, and automotive DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for BSZ0702LSATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

BSZ0702LSATMA1 belongs to the OptiMOSTM 60 V logic-level MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in compact AC-DC and DC-DC power conversion systems.

FAQ

What is the maximum junction temperature for BSZ0702LSATMA1?

The absolute maximum junction temperature is 150 °C, as specified in the datasheet's "Maximum ratings" table. Continuous operation above this limit risks permanent degradation of the silicon die and bond wires. Derating curves in Figure 1 show that power dissipation must be reduced linearly beyond T_C = 25 °C, with full derating to zero at T_C = 175 °C.

Does BSZ0702LSATMA1 require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and control dV/dt during switching. The datasheet specifies R_G,ext = 1.6 Ω for dynamic characterization (e.g., t_d(on), t_r). For 500 kHz–1 MHz operation, a 2.2–4.7 Ω series resistor balances switching speed and EMI suppression without compromising gate drive strength.

Can BSZ0702LSATMA1 be used in synchronous rectification mode?

Yes - its low R_DS(on) (4.0 mΩ), fast body diode (t_rr = 24–48 ns), and low Q_oss (32 nC) make it suitable for secondary-side synchronous rectification in LLC and flyback converters. Gate drive must be precisely timed to avoid shoot-through, typically using dedicated SR controllers like UCC24612 or MP6908.

Is BSZ0702LSATMA1 pin-compatible with other TSDSON-8 devices?

No - BSZ0702LSATMA1 has a unique pinout: all eight terminals are drain-connected, with gate on pin 4 only. Unlike standard TSDSON-8 logic-level MOSFETs (e.g., BSC010N06NS), it lacks separate source pins. PCB layout must accommodate monolithic drain-source thermal pad routing and gate isolation.

BSZ0702LSATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 17A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 36µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3100 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TDSON-8 FL

BSZ0702LSATMA1 FAQ

1.How can I place an order for BSZ0702LSATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSZ0702LSATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSZ0702LSATMA1 reliable?

The price and inventory of BSZ0702LSATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSZ0702LSATMA1 is usually 5 days.

3.What payment methods are accepted for BSZ0702LSATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSZ0702LSATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSZ0702LSATMA1?

BSZ0702LSATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSZ0702LSATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSZ0702LSATMA1?

For technical support, including BSZ0702LSATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSZ0702LSATMA1 requirements.

6.How does Aetrix verify that BSZ0702LSATMA1 is sourced from the original manufacturer or authorized distributors?

All BSZ0702LSATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSZ0702LSATMA1 meets industry standards.

7.What is the process for return or replacement of BSZ0702LSATMA1?

All BSZ0702LSATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with BSZ0702LSATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSZ0702LSATMA1 part is unused and in its original packaging.

Return procedure for BSZ0702LSATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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