Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR120Z

Name: IRFR120Z
Brand: Infineon Technologies
SKU: IRFR120Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFR120Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR120Z.pdf

Description:: MOSFET N-CH 100V 8.7A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,443

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFR120Z from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 100V V_DSS, 8.7A continuous drain current at T_C = 25°C, and 190 mΩ R_DS(on) at V_GS = 10V. It features 175°C maximum junction temperature, fast switching (t_r = 26 ns, t_f = 23 ns), and rated repetitive avalanche capability-used in DC-DC converters, motor drive half-bridges, and industrial power supplies.

For engineers reviewing the IRFR120Z datasheet, IRFR120Z pinout, IRFR120Z application, or IRFR120Z equivalent, key selection criteria include its 100V breakdown rating, low on-resistance with gate threshold of 2.0–4.0V, thermal robustness up to 175°C, and validated unclamped inductive switching performance per Figures 12a–12c and AN-1005.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per unit die area while maintaining ruggedness. Its design integrates a co-packaged body diode with t_rr = 24–36 ns and Q_rr = 23–35 nC, enabling efficient synchronous rectification and hard-switched topologies.

The device supports gate drive with standard 10V logic-level signals and exhibits stable transconductance (g_fs = 16 S typ.) and low gate charge (Q_g = 6.9–10 nC), reducing driver loss and enabling high-frequency operation up to several hundred kHz in SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche; defines usable input range in 48V and 72V bus systems.
R_DS(on) @ V_GS=10V	190 mΩ max - Conduction loss of ≤0.85 W at 8.7A; enables compact thermal design in PCB-mount applications.
I_D @ T_C=25°C	8.7 A - Continuous current capability with heatsink; derates to 6.1 A at 100°C case temperature.
Q_g	10 nC max - Total gate charge determines driver strength requirement; compatible with low-power gate drivers (e.g., IR2110 bootstrap stage).
t_r/t_f	26 ns / 23 ns - Fast edge rates reduce switching loss; supports >200 kHz PWM in isolated flyback or buck converters.
T_J max	175°C - Enables operation in sealed enclosures or high-ambient environments without forced air cooling.
E_AS	18 mJ (tested) - Single-pulse avalanche energy rating allows safe operation during inductive turn-off transients.

Pinout & Package

IRFR120Z is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal conduction. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is lead-free (PbF) compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance in switching paths.
Pin 2 (Gate)	Control terminal (G)	High-impedance MOS gate requiring <200 nA leakage; driven via series resistor (e.g., 10–53 Ω) to damp ringing.
Pin 3 (Drain)	Power output terminal (D)	Internally connected to exposed copper pad; must be soldered to large copper pour for thermal management (R_θJC = 4.28°C/W).

Key Features

Feature	Design Value
Ultra-low R_DS(on)	190 mΩ max at 10V drive - reduces I²R losses by ≥25% vs. legacy 100V MOSFETs in same package.
Repetitive avalanche rating	Rated per Fig. 16 up to T_J = 175°C - eliminates need for external snubbers in inductive load switching.
Fast body diode	t_rr = 24–36 ns, Q_rr = 23–35 nC - minimizes reverse recovery loss in freewheeling and synchronous rectifier roles.
Thermal robustness	R_θJA = 40°C/W (PCB mount) - achieves full 8.7A rating with 1-in² 2-oz copper pad, no heatsink required.

Applications

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48V BLDC inverters driving fans, pumps, or compressors.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase bridge; commutated at 10–20 kHz with dead-time control.

Use Value: 175°C rating ensures reliability under stall conditions; low Q_g enables clean gate drive with integrated gate drivers like IRS2007.

Use Scenario: Primary-side switch in isolated 48V-to-12V flyback converter for PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch operating at 150 kHz; handles 5.2A peak primary current.

Use Value: 100V V_DSS provides 2× safety margin over reflected 40V clamp; E_AS rating absorbs transformer leakage spikes.

LED Constant-Current Driver

Automotive Body Control Module

Use Scenario: High-side switch controlling 1–3A LED strings in commercial lighting fixtures.

IC Role / Device Role / Timing Role: PWM dimming switch modulated at 1–5 kHz; conducts continuously during ON phase.

Use Value: R_DS(on) ≤190 mΩ limits conduction loss to <1W at 3A, eliminating need for active cooling in enclosed housings.

Use Scenario: Load switch for solenoid valves or window lift motors in 12V automotive BCMs.

IC Role / Device Role / Timing Role: Protected high-current switch with integrated diagnostics; driven by microcontroller GPIO.

Use Value: Repetitive avalanche capability withstands inductive kickback from 12V solenoids without external TVS; PbF compliance meets automotive RoHS requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100Z	100V V_DSS, 10A I_D, 180 mΩ R_DS(on), TO-220 package	Through-hole mounting; higher R_θJA (62°C/W) requires heatsink for same current	Select when mechanical retention or manual assembly is preferred over SMT; verify thermal pad layout compatibility.
IXTP10N100D2	100V V_DSS, 10A I_D, 220 mΩ R_DS(on), TO-220AB package, enhanced dv/dt ruggedness	Higher R_DS(on) increases conduction loss; superior noise immunity in EMI-sensitive environments	Prefer in noisy industrial settings where gate oscillation risk exceeds efficiency priority.

Compared with STP10NK100Z and IXTP10N100D2, IRFR120Z offers optimal balance of SMT footprint, thermal performance (R_θJC = 4.28°C/W), and gate drive simplicity-making it ideal for space-constrained, high-reliability 100V switching nodes where board area and thermal mass are limited.

Availability

IRFR120Z is available at Aetrix Electronics and suitable for brushless DC motor drives, industrial DC-DC converters, LED constant-current drivers, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRFR120Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's HEXFET® portfolio.

The IRFR120Z belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial, automotive, and consumer power conversion systems where thermal resilience and avalanche ruggedness are critical.

FAQ

Is IRFR120Z suitable for 12V automotive battery-connected circuits?

Yes. With 100V V_DSS and 175°C T_J rating, IRFR120Z withstands automotive load-dump transients (up to 120V) and operates reliably in under-hood environments. Its PbF construction complies with automotive RoHS, and repetitive avalanche capability handles solenoid and relay inductive kickback without external clamping.

What is the recommended gate resistor value for IRFR120Z in a 150 kHz flyback converter?

Based on gate charge (Q_g = 6.9–10 nC) and typical driver rise/fall times, a 22 Ω series gate resistor balances switching speed and EMI. This yields ~15 ns effective edge time with a 1A peak driver, minimizing overlap loss while suppressing ringing observed in Figure 18b test waveforms.

Does IRFR120Z have a built-in ESD protection diode on the gate?

No. IRFR120Z does not integrate gate ESD protection. Per datasheet Section "Absolute Maximum Ratings," gate-to-source voltage is limited to ±20 V. External Zener clamping (e.g., 15V TVS) is recommended in handling and PCB layout to prevent gate oxide damage during assembly or system transient events.

Can IRFR120Z replace IRFR120 in existing designs?

Yes, IRFR120Z is a direct drop-in replacement for IRFR120, sharing identical pinout, package, and electrical specifications. The "Z" suffix denotes lead-free (PbF) construction and updated process-no layout or firmware changes are needed, and all thermal and switching performance metrics remain unchanged per datasheet revision B.

IRFR120Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 5.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 310 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR120Z FAQ

1.How can I place an order for IRFR120Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR120Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR120Z reliable?

The price and inventory of IRFR120Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR120Z is usually 5 days.

3.What payment methods are accepted for IRFR120Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR120Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR120Z?

IRFR120Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR120Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR120Z?

For technical support, including IRFR120Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR120Z requirements.

6.How does Aetrix verify that IRFR120Z is sourced from the original manufacturer or authorized distributors?

All IRFR120Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR120Z meets industry standards.

7.What is the process for return or replacement of IRFR120Z?

All IRFR120Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFR120Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR120Z part is unused and in its original packaging.

Return procedure for IRFR120Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.