Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE057N10NM6CGATMA1

Name: IQE057N10NM6CGATMA1
Brand: Infineon Technologies
SKU: IQE057N10NM6CGATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IQE057N10NM6CGATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IQE057N10NM6CGATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,949

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IQE057N10NM6CGATMA1 from Infineon Technologies is an N-channel 100 V OptiMOSTM 6 power MOSFET in PG-TTFN-9 package, rated for 98 A continuous drain current at TC=25 °C, with max RDS(on) of 5.7 mΩ at VGS=10 V and low Qrr of 37.6 nC (100 A/µs), optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IQE057N10NM6CGATMA1 datasheet, IQE057N10NM6CGATMA1 pinout, IQE057N10NM6CGATMA1 application, or IQE057N10NM6CGATMA1 equivalent, key selection criteria include its 175 °C operating temperature rating, gate charge × RDS(on) figure-of-merit, low reverse recovery charge, and thermal resistance (RthJC = 0.57 °C/W), critical for high-efficiency, high-power-density power supply designs.

Technical Context

This MOSFET employs a trench-gate superjunction structure enabling ultra-low on-resistance while maintaining fast switching performance. Its gate plateau voltage is 4.5 V, and it delivers typ. Qgs of 8.7 nC and Qgd of 5 nC under standard 50 V/12.5 A test conditions.

The integrated body diode exhibits typ. VSD of 0.81 V at IF=25 A and Tj=25 °C, with trr as low as 19.5 ns (diF/dt = 1000 A/µs), supporting efficient hard-switched and resonant topologies where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
VDS	100 V - Maximum blocking voltage; supports 48 V input bus systems with 2× safety margin.
RDS(on),max	5.7 mΩ at VGS=10 V, ID=25 A - Enables <1.5 W conduction loss at 98 A, critical for high-current output stages.
ID,cont	98 A at TC=25 °C - Sustains high load currents without external heatsink in compact PCB layouts.
Qrr	37.6 nC at diF/dt=100 A/µs - Reduces switching loss and voltage overshoot during diode commutation in synchronous buck converters.
RthJC	0.57 °C/W - Enables direct thermal coupling to heatsink; allows >120 W power dissipation before junction exceeds 175 °C.
Qg	27–34 nC - Low gate drive energy requirement supports efficient operation with standard gate drivers (e.g., 1EDN751x).
Tj,max	175 °C - Rated for industrial and automotive under-hood environments without derating up to ambient 105 °C.

Pinout & Package

Package: PG-TTFN-9 - Thermally enhanced 9-pin thin-flange no-lead package with exposed drain pad (pins 5–8) for low-inductance, high-current routing and superior thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Pins 5–8)	Main current path (high-side or low-side switch node)	Parallel pins reduce current density and parasitic inductance; soldered to large copper area for thermal and electrical performance.
Gate (Pin 9)	Control terminal for channel modulation	Single dedicated gate pin minimizes gate loop inductance; requires low-impedance driver connection to suppress ringing.
Source (Pins 1–4)	Reference node for gate drive and current sensing	Four-source pins provide low-impedance return path and enable Kelvin source sensing for accurate RDS(on)-based current monitoring.

Key Features

Feature	Design Value
Optimized FOM (Qg × RDS(on))	~153 nC·mΩ - Balances switching loss and conduction loss for 300–1000 kHz DC-DC operation.
Low Qrr (37.6 nC)	Reduces turn-on loss in high-side FETs and enables ZVS in LLC resonant converters.
175 °C TJ rating	Eliminates need for thermal derating in sealed enclosures or high-ambient industrial power supplies.
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 - suitable for consumer, industrial, and automotive end equipment.
MSL 1 classification	Zero floor life limitation - supports standard SMT assembly without baking or dry pack handling.

Applications

Server VRM

Industrial UPS

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V @ up to 600 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300–600 kHz multiphase topology.

Use Value: 5.7 mΩ RDS(on) and 37.6 nC Qrr minimize conduction + reverse recovery losses, improving VRM efficiency by ≥0.5% at full load.

Use Scenario: Bidirectional DC-DC stage in 48 V/380 V hybrid UPS systems with active power factor correction.

IC Role / Device Role / Timing Role: High-current switch in isolated dual-active-bridge (DAB) converter primary side.

Use Value: 175 °C rating and 0.57 °C/W RthJC allow sustained 98 A operation without forced air, reducing system cooling cost and footprint.

Telecom Rectifier

EV Onboard Charger

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers delivering 1–3 kW output.

IC Role / Device Role / Timing Role: 100 V-rated secondary-side switch replacing Schottky diodes in phase-shifted full-bridge topology.

Use Value: Low Qrr reduces voltage spike and EMI during diode commutation, easing filter design and meeting CISPR-32 Class B limits.

Use Scenario: Primary-side switch in 6.6 kW single-phase OBC PFC + DC-DC stages.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in interleaved boost PFC with 100 kHz switching frequency.

Use Value: Gate charge of 27–34 nC enables clean turn-on with 2 A peak gate drivers, minimizing dead-time loss and THD.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 220 A, RDS(on)=3.2 mΩ, Qg=52 nC, PG-HSOF-8 package	Higher current rating but larger package and higher gate charge - increases driver loss and layout complexity.	Preferred only when >150 A continuous current is required and board space permits larger footprint.
IXFH50N10X	100 V, 50 A, RDS(on)=12.5 mΩ, Qg=38 nC, TO-247 package	Lower current and higher RDS(on); uses through-hole mounting and lacks Kelvin source pins.	Suitable for lower-power (<1 kW) legacy designs where thermal mass of TO-247 is acceptable and SMT is not required.

Compared with STL220N10F7 and IXFH50N10X, IQE057N10NM6CGATMA1 offers optimal balance of current capability (98 A), low-loss switching (Qrr=37.6 nC), and compact surface-mount packaging - making it ideal for space-constrained, high-efficiency 1–3 kW power stages where thermal management and EMI control are critical.

Availability

IQE057N10NM6CGATMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial UPS systems, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IQE057N10NM6CGATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This device belongs to the OptiMOSTM 6 family - engineered for high-frequency, high-efficiency power conversion in data center, telecom, and industrial SMPS, emphasizing low RDS(on) × Qg FOM and robust avalanche ruggedness.

FAQ

What is the maximum recommended gate drive voltage for IQE057N10NM6CGATMA1?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for 10 V drive. Operating at 12–15 V provides marginal RDS(on) reduction but increases gate oxide stress and does not improve switching speed meaningfully due to fixed gate plateau voltage of 4.5 V.

Can IQE057N10NM6CGATMA1 be used in avalanche mode?

Yes - it is fully rated for repetitive avalanche with EAS = 461 mJ (single pulse, ID = 8 A). The device passes JEDEC JESD24-11 qualification for industrial avalanche robustness, making it suitable for clamping applications and circuits with inductive switching transients.

Is Kelvin source connection supported, and how is it implemented?

Yes - pins 1–4 are dedicated source terminals, electrically isolated from the drain pad. For Kelvin sensing, connect gate driver reference and current-sense resistor exclusively to one source pin (e.g., Pin 1), while routing high-current return via all four source pins to minimize measurement error from IR drop.

What is the thermal resistance from junction to ambient (RthJA) under standard PCB conditions?

RthJA is 60 °C/W when mounted on a 40 mm × 40 mm FR4 PCB with 6 cm² copper area (one layer, 70 µm thick) for drain connection, vertical orientation in still air - per JEDEC JESD51-2. Actual RthJA will improve with multilayer copper or heatsink attachment.

IQE057N10NM6CGATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IQE057N10NM6CGATMA1 FAQ

1.How can I place an order for IQE057N10NM6CGATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE057N10NM6CGATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE057N10NM6CGATMA1 reliable?

The price and inventory of IQE057N10NM6CGATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE057N10NM6CGATMA1 is usually 5 days.

3.What payment methods are accepted for IQE057N10NM6CGATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE057N10NM6CGATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE057N10NM6CGATMA1?

IQE057N10NM6CGATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE057N10NM6CGATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE057N10NM6CGATMA1?

For technical support, including IQE057N10NM6CGATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE057N10NM6CGATMA1 requirements.

6.How does Aetrix verify that IQE057N10NM6CGATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE057N10NM6CGATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE057N10NM6CGATMA1 meets industry standards.

7.What is the process for return or replacement of IQE057N10NM6CGATMA1?

All IQE057N10NM6CGATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE057N10NM6CGATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE057N10NM6CGATMA1 part is unused and in its original packaging.

Return procedure for IQE057N10NM6CGATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.