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FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
BSB056N10NN3GXUMA2

BSB056N10NN3GXUMA2

TRENCH >=100V

Infineon Technologies

9,605 0.00
RFQ
BSB056N10NN3GXUMA2

Datasheet

- DirectFET™ Isometric MN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 83A (Tc) 6V, 10V 5.6mOhm @ 30A, 10V 3.5V @ 100µA 74 nC @ 10 V ±20V 5500 pF @ 50 V - 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-5-3
BSB056N10NN3GXUMA3

BSB056N10NN3GXUMA3

TRENCH >=100V

Infineon Technologies

5,916 0.00
RFQ
BSB056N10NN3GXUMA3

Datasheet

- DirectFET™ Isometric MN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 83A (Tc) 6V, 10V 5.6mOhm @ 30A, 10V 3.5V @ 100µA 74 nC @ 10 V ±20V 5500 pF @ 50 V - 2.8W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount MG-WDSON-5-3
IPB80N03S4L02ATMA1

IPB80N03S4L02ATMA1

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies

5,214 0.00
RFQ
IPB80N03S4L02ATMA1

Datasheet

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.4mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
SPP70N10L

SPP70N10L

MOSFET N-CH 100V 70A TO220-3

Infineon Technologies

7,430 0.00
RFQ
SPP70N10L

Datasheet

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 4.5V, 10V 16mOhm @ 50A, 10V 2V @ 2mA 240 nC @ 10 V ±20V 4540 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IRFU5410

IRFU5410

MOSFET P-CH 100V 13A IPAK

Infineon Technologies

8,845 0.00
RFQ
IRFU5410

Datasheet

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 205mOhm @ 7.8A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 66W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK (TO-251AA)
IPP08CN10N G

IPP08CN10N G

MOSFET N-CH 100V 95A TO220-3

Infineon Technologies

5,466 0.00
RFQ
IPP08CN10N G

Datasheet

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100 V 95A (Tc) 10V 8.5mOhm @ 95A, 10V 4V @ 130µA 100 nC @ 10 V ±20V 6660 pF @ 50 V - 167W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
AUIRFN8405TR

AUIRFN8405TR

MOSFET N-CH 40V 95A PQFN

Infineon Technologies

6,488 0.00
RFQ
AUIRFN8405TR

Datasheet

HEXFET® 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 10V 2mOhm @ 50A, 10V 3.9V @ 100µA 117 nC @ 10 V ±20V 5142 pF @ 25 V - 3.3W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PQFN (5x6)
IQE057N10NM6CGSCATMA1

IQE057N10NM6CGSCATMA1

TRENCH >=100V

Infineon Technologies

3,672 0.00
RFQ
IQE057N10NM6CGSCATMA1

Datasheet

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AUIRF4104STRL

AUIRF4104STRL

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies

4,897 0.00
RFQ
AUIRF4104STRL

Datasheet

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) - 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V - 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IRF7326D2TR

IRF7326D2TR

MOSFET P-CH 30V 3.6A 8SO

Infineon Technologies

9,062 0.00
RFQ
IRF7326D2TR

Datasheet

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 100mOhm @ 1.8A, 10V 1V @ 250µA 25 nC @ 10 V ±20V 440 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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