Infineon Technologies IPP08CN10N G

Overview

IPP08CN10N G from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency switching and synchronous rectification in DC-DC converters and motor drives. It features 100 V V_DS, 8.2 mΩ R_DS(on) (TO-263), 95 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature - enabling compact, thermally robust power stages in server VRMs and industrial inverters.

For engineers reviewing the IPP08CN10N G datasheet, IPP08CN10N G pinout, IPP08CN10N G application, or IPP08CN10N G equivalent, key selection criteria include its gate charge × R_DS(on) figure of merit, avalanche ruggedness (262 mJ), reverse diode recovery performance (t_rr = 105 ns), and thermal resistance (R_thJC = 0.9 K/W) for high-power density designs.

Technical Context

This OptiMOS®2 device uses planar silicon technology with optimized cell pitch and trench-assisted channel design to achieve low R_DS(on) while maintaining fast switching transients. Its gate threshold voltage (2–4 V) ensures reliable turn-on with standard 10 V gate drivers, and the 1.5 Ω gate resistance supports controlled dv/dt without external gate resistors in many applications.

The integrated body diode exhibits soft reverse recovery (Q_rr = 270 nC, t_rr = 105 ns) and 6 kV/µs dv/dt immunity, making it suitable for hard-switched topologies where commutation stress is critical. Thermal performance is validated per JEDEC standards on a 40 mm × 40 mm FR4 PCB with 6 cm² copper area.

Key Specifications

Pinout & Package

IPP08CN10N G is offered in PG-TO220-3 (through-hole), PG-TO262-3 (surface-mount variant of TO-220), and PG-TO263-3 (D²PAK) packages. This entry refers specifically to the PG-TO220-3 variant, with drain-connected tab for direct heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with IRF540N and STP110N10F7, IPP08CN10N G delivers superior power density via its 8.2 mΩ R_DS(on) and JEDEC-validated reliability, while maintaining gate drive compatibility and thermal robustness essential for mission-critical 48 V and solar systems.

Availability

IPP08CN10N G is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, solar microinverters, and automotive on-board chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPP08CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS®2 family, designed specifically for high-efficiency, high-frequency power conversion in computing, industrial, and renewable energy systems where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum allowable gate-source voltage for IPP08CN10N G?

The absolute maximum gate-source voltage is ±20 V. Operation above +20 V risks permanent gate oxide damage, while negative voltage beyond –20 V may cause threshold shift. For reliable 10 V logic-level drive, a 12–15 V supply with transient clamping is recommended to accommodate ringing and overshoot in high-dI/dt layouts.

Can IPP08CN10N G be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (increasing ~0.5%/°C) enables stable current sharing across paralleled devices. Thermal coupling between packages must be matched, and gate drive impedance balanced to avoid dynamic imbalance. Derating by 15% per additional device is advised for sustained 95 A operation.

Does IPP08CN10N G require a gate resistor in typical applications?

A gate resistor is recommended despite the internal 1.5 Ω R_G. External values of 2.2–10 Ω control turn-on/turn-off dv/dt, reduce EMI, and prevent gate oscillation in high-frequency layouts. Values below 2.2 Ω risk excessive peak gate current (>3 A), while >15 Ω significantly increases switching losses.

Is the TO-220 package variant of IPP08CN10N G lead-free and RoHS compliant?

Yes - all variants including the PG-TO220-3 package feature Pb-free lead plating and fully comply with RoHS Directive 2011/65/EU. The device also meets JEDEC J-STD-020 moisture sensitivity level MSL3 and passes reflow profile testing up to 260 °C peak temperature.