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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFU5410

Name: IRFU5410
Brand: Infineon Technologies
SKU: IRFU5410
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFU5410

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IRFU5410.pdf

Description:: MOSFET P-CH 100V 13A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:8,845

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Product details

Overview

IRFU5410 from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TO-251AA (I-Pak) package, rated for -100 V V_DS, 0.205 Ω R_DS(on) at V_GS = -10 V, and -13 A continuous drain current at T_C = 25°C. It features fully avalanche-rated ruggedness, fast switching (t_r = 58 ns, t_f = 46 ns), and low gate charge (Q_g = 58 nC), enabling use in high-efficiency DC-DC converters and motor control H-bridge high-side switches.

For engineers reviewing the IRFU5410 datasheet, IRFU5410 pinout, IRFU5410 application, or IRFU5410 equivalent, key selection criteria include verified P-channel polarity, -100 V breakdown voltage, thermal resistance of 110 °C/W (junction-to-ambient, free-air), TO-251AA through-hole mounting compatibility, and body diode recovery performance (t_rr = 130–190 ns, dv/dt = -5.0 V/ns).

Technical Context

This device operates as a normally-off P-channel switch requiring negative gate drive relative to source. Its design integrates fifth-generation HEXFET processing for ultra-low on-resistance per die area and optimized gate charge distribution-critical for minimizing conduction and switching losses in hard-switched topologies.

The integrated body diode supports synchronous rectification and unclamped inductive switching, with confirmed single-pulse avalanche energy rating of 194 mJ and repetitive avalanche capability (E_AR = 6.3 mJ). Thermal design must account for R_θJC = 1.9 °C/W and R_θJA = 110 °C/W in non-heatsinked conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-100 V - Maximum blocking voltage in high-side P-channel configuration; defines safe operating range in 48 V industrial bus systems.
R_DS(on)	0.205 Ω @ V_GS = -10 V - Confirmed static on-resistance enabling ≤1.1 W conduction loss at -7.8 A, critical for thermal budgeting.
I_D (T_C = 25°C)	-13 A - Continuous drain current rating under ideal heatsinking; derates to -8.2 A at 100°C case temperature.
Q_g	58 nC - Total gate charge determining driver strength requirement; enables <1 µs switching transitions with 50 mA gate drivers.
t_r/t_f	58 ns / 46 ns - Verified rise/fall times at V_DD = 50 V, I_D = -8.4 A, defining minimum PWM frequency limits in SMPS.
E_AS	194 mJ - Single-pulse avalanche energy at T_J = 25°C, L = 6.4 mH, confirming robustness against inductive turn-off transients.
V_GS(th)	-2.0 to -4.0 V - Gate threshold range ensuring reliable turn-on with standard -10 V logic-level drive, excluding 3.3 V gate compatibility.

Pinout & Package

IRFU5410 uses the TO-251AA (I-Pak) through-hole package with three leads and an exposed drain tab for thermal conduction. The package is lead-free and RoHS-compliant, designed for wave soldering with 300°C maximum soldering temperature (10 s, 1.6 mm from case).

Pin/Terminal	Circuit Role	Design Meaning
1 (Lead)	Gate	Control terminal requiring negative voltage relative to source; 100 nA max reverse leakage at -20 V ensures low standby power.
2 (Tab/Pad)	Drain	Main high-voltage power terminal; electrically connected to exposed metal tab for direct PCB copper pour thermal coupling.
3 (Lead)	Source	Reference node for gate drive and load return path; internal connection to substrate ground plane in P-channel structure.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.205 Ω at -10 V gate drive reduces conduction loss by >35% vs. legacy P-channel MOSFETs in 48 V battery disconnect circuits.
Fully avalanche-rated	194 mJ single-pulse and 6.3 mJ repetitive avalanche energy enable reliable operation without external snubbers in relay replacement applications.
Fast body diode recovery	t_rr = 130–190 ns and dv/dt = -5.0 V/ns support efficient synchronous rectification in buck-derived topologies.
TO-251AA through-hole mount	Straight-lead mechanical form factor provides higher mechanical retention and thermal mass vs. surface-mount D-Pak variants for industrial vibration environments.

Applications

Industrial Motor Control

Telecom DC-DC Conversion

Use Scenario: High-side switch in half-bridge motor driver for 24–48 V brushed DC motors in factory automation.

IC Role / Device Role / Timing Role: P-channel high-side power switch controlling motor voltage rail; operates in hard-switched mode at 20–50 kHz PWM.

Use Value: 0.205 Ω R_DS(on) limits I²R loss to ≤2.1 W at 10 A, enabling compact heatsinkless designs in IP65-rated enclosures.

Use Scenario: Input protection and hot-swap controller in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between input connector and downstream DC-DC stage.

Use Value: -100 V V_DS rating accommodates 48 V nominal + 30% surge; -52 A pulsed current handles inrush during board insertion.

Automotive Body Electronics

Power Supply Sequencing

Use Scenario: Load switch for rear lighting modules (brake/tail lamps) in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: P-channel high-side switch with integrated diagnostics; driven by microcontroller GPIO with level-shifting.

Use Value: Verified -55 to +150°C operating range and 110 °C/W R_θJA ensure stable operation in under-hood junction boxes without active cooling.

Use Scenario: Controlled power-up sequencing of FPGA and memory rails in embedded computing systems.

IC Role / Device Role / Timing Role: Delayed turn-on switch isolating secondary rail until primary supply stabilizes; controlled via RC-gated gate drive.

Use Value: Low Q_g (58 nC) and precise V_GS(th) (-2.0 to -4.0 V) enable accurate 1–10 ms turn-on timing with passive RC networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9530PBF	V_DS = -100 V, R_DS(on) = 0.3 Ω @ -10 V, TO-220 package, slower switching (t_r = 120 ns)	Larger footprint, higher conduction loss, lower thermal density; suited for lower-frequency linear regulators	Select when mechanical mounting constraints favor TO-220 or when gate drive current is limited to <20 mA
STP12PF06	V_DS = -60 V, R_DS(on) = 0.18 Ω @ -10 V, TO-220, no avalanche rating	Lower voltage rating restricts use to ≤24 V systems; lacks E_AS specification for inductive load safety	Choose only for cost-sensitive 24 V applications where avalanche stress is absent and thermal margin exceeds 25°C

Compared with IRF9530PBF and STP12PF06, IRFU5410 delivers superior thermal efficiency in TO-251AA form factor, verified avalanche ruggedness for inductive loads, and faster switching-making it optimal for space-constrained, high-reliability 48 V industrial power stages.

Availability

IRFU5410 is available at Aetrix Electronics and suitable for industrial motor control, telecom DC-DC conversion, and automotive body electronics requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IRFU5410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level solutions.

The HEXFET® Power MOSFET product line was engineered for high-efficiency switching in industrial, telecom, and automotive power systems-emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRFU5410 compatible with 3.3 V or 5 V microcontroller GPIOs?

No. IRFU5410 requires V_GS ≤ -10 V for full enhancement and specified R_DS(on); its V_GS(th) range (-2.0 to -4.0 V) means 3.3 V or 5 V logic cannot reliably turn it on. A dedicated negative gate driver or level-shifting circuit is mandatory for microcontroller interface.

What is the maximum recommended PCB copper area for TO-251AA thermal relief?

Per IR Application Note AN-994, a 1-inch square FR-4 PCB pad achieves R_θJA = 110 °C/W. For improved thermal performance, extend the drain-connected copper pour beyond 1 in² with multiple thermal vias to inner ground planes-verified to reduce R_θJA to ~75 °C/W in production layouts.

Does IRFU5410 have a specified SOA curve for linear-mode operation?

Yes. Figure 8 in the official datasheet defines the Safe Operating Area up to 10 ms pulse width, bounded by R_DS(on), peak current (-52 A), and thermal limits. Linear operation is permitted only within this curve; sustained operation above 100°C junction temperature requires active cooling and derating per the 0.53 W/°C linear derating factor.

Can IRFU5410 replace IRFR5410 in existing designs?

Only mechanically-not electrically identical. IRFU5410 uses TO-251AA (through-hole) while IRFR5410 uses TO-252AA (surface-mount). Pinout is identical (G-D-S-D), but soldering method, thermal path, and board layout differ. Electrical specs match exactly; redesign is required for footprint and assembly process compatibility.

IRFU5410 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 205mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 58 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 760 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 66W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: IPAK (TO-251AA)

IRFU5410 FAQ

1.How can I place an order for IRFU5410 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFU5410 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFU5410 reliable?

The price and inventory of IRFU5410 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFU5410 is usually 5 days.

3.What payment methods are accepted for IRFU5410?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFU5410 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFU5410?

IRFU5410 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFU5410 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFU5410?

For technical support, including IRFU5410 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFU5410 requirements.

6.How does Aetrix verify that IRFU5410 is sourced from the original manufacturer or authorized distributors?

All IRFU5410 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFU5410 meets industry standards.

7.What is the process for return or replacement of IRFU5410?

All IRFU5410 units undergo pre-shipment inspection (PSI). If there is an issue with IRFU5410, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFU5410 part is unused and in its original packaging.

Return procedure for IRFU5410:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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