Infineon Technologies SPP70N10L
- Part No.:
- SPP70N10L
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SPP70N10L.pdf
- Description:
- MOSFET N-CH 100V 70A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,430
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SPP70N10L from Infineon Technologies is an N-channel logic-level SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 70 A continuous drain current at TC = 25 °C, and 16 mΩ RDS(on) at VGS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and dv/dt ruggedness up to 6 kV/µs - designed for high-current switching in industrial motor drives and DC-DC converters.
For engineers reviewing the SPP70N10L datasheet, SPP70N10L pinout, SPP70N10L application, or SPP70N10L equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.2–2.0 V), low RDS(on) at 4.5 V (14–25 mΩ), integrated body diode with 100–150 ns reverse recovery time, and TO-220-3 package thermal resistance of 0.6 K/W (junction-to-case).
Technical Context
This device operates in enhancement mode with a threshold voltage range of 1.2–2.0 V, enabling direct interface with 3.3 V and 5 V microcontrollers without gate drivers. Its 100 V V(BR)DSS and 700 mJ single-pulse avalanche energy support robust operation under inductive load switching and transient overvoltage conditions.
The MOSFET exhibits dynamic parameters optimized for hard-switching: 3630–4540 pF input capacitance (Ciss), 345–430 pF reverse transfer capacitance (Crss), and total gate charge of 160–240 nC - balancing switching speed and EMI control in high-frequency power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V and 96 V bus systems with 2× safety margin against transients |
| RDS(on) @ VGS = 10 V | 10–16 mΩ - enables <1.5 W conduction loss at 70 A, reducing heatsink requirements |
| RDS(on) @ VGS = 4.5 V | 14–25 mΩ - ensures full enhancement with standard logic-level MCU outputs |
| ID (continuous) | 70 A @ TC = 25 °C - delivers high current density in compact TO-220 footprint |
| EAS | 700 mJ - withstands repetitive inductive energy spikes without derating in motor H-bridge legs |
| dv/dt rating | 6 kV/µs - prevents false turn-on during fast voltage transients in half-bridge configurations |
| Tj(max) | 175 °C - allows operation in sealed enclosures or high-ambient industrial environments |
Pinout & Package
Supplied in P-TO220-3-1 package (standard through-hole TO-220 variant with isolated tab), featuring three terminals: Drain (pin 1), Gate (pin 2), Source (pin 3). The metal tab is electrically connected to the Drain terminal and serves as primary heat path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Tab) | Drain | High-current output node; electrically tied to heatsink; requires isolation if heatsink is grounded |
| Pin 2 | Gate | Control input; low gate charge (160–240 nC) enables fast switching with modest driver capability |
| Pin 3 | Source | Reference node for gate drive; connects to power ground or low-side switch return path |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1.2–2.0 V - eliminates need for level-shifting or dedicated gate drivers in 3.3/5 V control systems |
| Avalanche-rated operation | EAS = 700 mJ - enables reliable unclamped inductive switching without external snubbers in relay/motor drivers |
| High dv/dt immunity | 6 kV/µs - suppresses parasitic turn-on in high-speed half-bridge topologies with fast edge rates |
| Integrated body diode | trr = 100–150 ns, Qrr = 600–900 nC - supports synchronous rectification and freewheeling in buck/boost converters |
| Thermal performance | RthJC = 0.6 K/W - enables >200 W dissipation with moderate heatsinking, critical for space-constrained industrial SMPS |
Applications
| Industrial Motor Drives | DC-DC Converters |
|---|---|
|
Use Scenario: High-current half-bridge leg in 48 V BLDC motor controllers for HVAC blowers and conveyor systems. IC Role / Device Role / Timing Role: Low-side switching element handling 70 A peak phase current with 100 kHz PWM switching. Use Value: Logic-level gate drive reduces controller BOM cost; 175 °C rating sustains operation in enclosed cabinets without forced air cooling. |
Use Scenario: Primary-side synchronous rectifier in 1 kW isolated LLC resonant converter for telecom power supplies. IC Role / Device Role / Timing Role: High-efficiency secondary-side switch replacing Schottky diodes, operating at 300–500 kHz. Use Value: 10–16 mΩ RDS(on) cuts conduction losses by >40% vs. 45 V Schottky; fast trr minimizes switching loss during zero-voltage transitions. |
| Uninterruptible Power Supplies | Automotive DC Load Switches |
|
Use Scenario: Battery backup inverter stage delivering 230 V AC output from 48 V battery bank in data center UPS units. IC Role / Device Role / Timing Role: High-current output switch in full-bridge topology, conducting 70 A RMS with 50 Hz fundamental and harmonic content. Use Value: Avalanche rating absorbs line-reactive energy during grid switchover; 700 mJ EAS eliminates need for external clamping circuits. |
Use Scenario: High-side load switch controlling 12 V/24 V auxiliary circuits (e.g., lighting, pumps) in commercial vehicle ECUs. IC Role / Device Role / Timing Role: Protected power switch with integrated overcurrent and thermal shutdown via external sense resistor. Use Value: 1.2–2.0 V VGS(th) ensures compatibility with automotive 5 V MCUs; 175 °C rating meets under-hood ambient requirements per ISO 16750-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP70NF10 | RDS(on) = 14–20 mΩ @ 10 V; higher Ciss (4200 pF); no specified dv/dt rating | Lacks documented 6 kV/µs dv/dt immunity - less suitable for high-di/dt half-bridge topologies | Preferable where gate drive strength exceeds 2 A peak and layout minimizes ringing |
| IRF540N | VGS(th) = 2–4 V; RDS(on) = 44 mΩ @ 10 V; lower ID (33 A); not logic-level optimized | Requires gate driver for reliable 5 V MCU interface; higher conduction loss limits use to ≤30 A loads | Only viable for cost-sensitive, low-power replacements where thermal headroom exists |
Compared with STP70NF10 and IRF540N, the SPP70N10L offers superior dv/dt ruggedness and lower on-resistance at logic-level gate voltages - making it the preferred choice for high-reliability, high-current industrial switching where gate drive simplicity and transient immunity are critical.
Availability
SPP70N10L is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.
Supply support for SPP70N10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.
The SPP70N10L belongs to Infineon's SIPMOS™ logic-level power MOSFET product line, engineered for high-current, high-ruggedness switching in industrial automation, renewable energy inverters, and transportation systems.
FAQ
What is the maximum safe operating temperature for SPP70N10L?
The SPP70N10L has a maximum junction temperature (Tj(max)) of +175 °C, verified per JEDEC JESD22-A108. Operation at this limit requires strict thermal design: RthJC = 0.6 K/W mandates a heatsink with ≤1.2 K/W total thermal resistance to ambient when dissipating 250 W. Derating curves on page 4 confirm 50 A continuous current at TC = 100 °C.
Does SPP70N10L require a gate resistor, and what value is recommended?
Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 70 A switching with 1.3 Ω source impedance (per datasheet test condition), a 10–22 Ω series gate resistor is typical. Lower values (≤10 Ω) improve switching speed but increase EMI risk; higher values (>33 Ω) reduce ringing but extend turn-on time beyond 105 ns, raising switching losses in high-frequency designs.
Can SPP70N10L be used in parallel configurations?
Yes - its positive temperature coefficient for RDS(on) (see page 9 curve) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 0.1–0.5 Ω source resistors for stability. Thermal coupling between devices must be minimized to avoid thermal runaway; datasheet page 4 SOA chart confirms safe operation up to 140 A with appropriate derating.
Is the body diode suitable for continuous freewheeling in synchronous rectification?
Yes - the integrated body diode is rated for 70 A continuous forward current (IS) at TC = 25 °C and exhibits trr = 100–150 ns with Qrr = 600–900 nC. However, its VSD = 1.2–1.8 V at 140 A means conduction losses exceed those of discrete Schottkys below 100 kHz; optimal use is in medium-frequency (<300 kHz) synchronous buck converters where gate drive timing compensates for recovery delay.
SPP70N10L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs:
- 240 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4540 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 250W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
SPP70N10L FAQ
1.How can I place an order for SPP70N10L through Aetrix?
Please submit a Request for Quotation (RFQ) for SPP70N10L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPP70N10L reliable?
The price and inventory of SPP70N10L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP70N10L is usually 5 days.
3.What payment methods are accepted for SPP70N10L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP70N10L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPP70N10L?
SPP70N10L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPP70N10L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPP70N10L?
For technical support, including SPP70N10L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP70N10L requirements.
6.How does Aetrix verify that SPP70N10L is sourced from the original manufacturer or authorized distributors?
All SPP70N10L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP70N10L meets industry standards.
7.What is the process for return or replacement of SPP70N10L?
All SPP70N10L units undergo pre-shipment inspection (PSI). If there is an issue with SPP70N10L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPP70N10L part is unused and in its original packaging.
Return procedure for SPP70N10L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SPP70N10L Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

