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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IQE057N10NM6CGSCATMA1

Name: IQE057N10NM6CGSCATMA1
Brand: Infineon Technologies
SKU: IQE057N10NM6CGSCATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IQE057N10NM6CGSCATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IQE057N10NM6CGSCATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IQE057N10NM6CGSCATMA1 from Infineon Technologies is an N-channel 100 V OptiMOSTM 6 power MOSFET in PG-WHTFN-9 package, featuring 5.7 mΩ max R_DS(on) at V_GS = 10 V, 98 A continuous drain current, and 37.6 nC reverse recovery charge (Q_rr) at 100 A/µs - optimized for high-frequency synchronous rectification in server VRMs and telecom DC-DC converters.

For engineers reviewing the IQE057N10NM6CGSCATMA1 datasheet, IQE057N10NM6CGSCATMA1 pinout, IQE057N10NM6CGSCATMA1 application, or IQE057N10NM6CGSCATMA1 equivalent, key selection criteria include its low Q_g×R_DS(on) figure-of-merit (26 nC × 5.7 mΩ), 175 °C rated junction temperature, and dual-side cooling capability enabled by top- and bottom-side thermal paths in the thermally enhanced WHTFN package.

Technical Context

This device implements a trench-gate superjunction MOSFET architecture with integrated body diode optimized for zero-voltage switching (ZVS) and hard-switched synchronous rectification. Its gate plateau voltage of 4.5 V enables robust drive margin under transient conditions, while the 0.57 °C/W typical R_thJC (bottom) supports high-power density designs.

The 24 nC Q_g(sync) at V_DS = 0.1 V reflects low gate charge specifically for synchronous FET operation, and the 19.5–39 ns trr range (diF/dt = 1000 A/µs) confirms fast, soft reverse recovery behavior critical for minimizing switching losses in phase-shifted full-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - maximum blocking voltage compatible with 48 V input bus systems and 12 V output stages in isolated DC-DC converters
R_DS(on), max	5.7 mΩ at V_GS = 10 V - enables ≤ 60 W conduction loss at 98 A, supporting high-efficiency 1 kW+ VRMs
Q_rr	37.6 nC at 100 A/µs - reduces turn-on loss and EMI in synchronous rectifiers operating above 300 kHz
Q_G(0V…10V)	26 nC - low gate charge minimizes driver power and allows use of compact gate drivers like IRS2186S
T_j max	175 °C - permits operation in sealed industrial enclosures without forced air, extending reliability in harsh environments
R_thJC (bottom)	0.57 °C/W typ - enables >125 W power dissipation with minimal case-to-heatsink ΔT when mounted on copper pads
C_iss	1900–2400 pF - predictable input capacitance simplifies gate drive loop stability analysis in high-speed control loops

Pinout & Package

Package: PG-WHTFN-9 - thermally enhanced wettable flank QFN with exposed drain pad (pins 5–8 + tab), gate on pin 9, and source on pins 1–4. Supports dual-side cooling and automated optical solder inspection (AOI).

Pin/Terminal	Circuit Role	Design Meaning
1–4	Source	Low-inductance parallel connection to PCB ground plane; internal body diode cathode
5–8 + tab	Drain	Main power path and primary thermal interface; connected to high-current output node and heatsink
9	Gate	High-impedance control terminal requiring <1.8 Ω external gate resistor to damp ringing during 12.5 A switching transitions

Key Features

Feature	Design Value
Optimized Q_g × R_DS(on) FOM	26 nC × 5.7 mΩ = 148 mΩ·nC - reduces total switching + conduction loss by ≥12% vs. legacy OptiMOSTM 5 in 400 kHz LLC resonant converters
Low Q_rr with soft recovery	37.6 nC Q_rr and 35.4 ns t_rr at 100 A/µs - suppresses voltage overshoot and dv/dt-induced shoot-through in half-bridge synchronous rectifiers
175 °C operation with MSL 1 rating	Rated for continuous operation up to 175 °C junction temperature and moisture sensitivity level 1 - eliminates baking requirement prior to reflow
Dual thermal path design	R_thJC = 0.57 °C/W (bottom) and ≤1.4 °C/W (top) - enables thermal management flexibility in constrained board layouts with limited bottom-side heatsinking
Pb-free, halogen-free construction	RoHS-compliant lead plating and IEC61249-2-21 compliant materials - meets IPC-J-STD-020 and automotive ELV requirements

Applications

Server Voltage Regulator Module (VRM)

Telecom 48 V Input DC-DC Converter

Use Scenario: High-density 32-phase VRM delivering 200 A @ 0.8 V to AI accelerators with <1% output ripple.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in buck converter phase leg, switching at 1 MHz with adaptive dead-time control.

Use Value: 5.7 mΩ R_DS(on) and 24 nC Q_g(sync) reduce conduction loss by 21% and gate drive loss by 33% versus previous-gen 6.8 mΩ devices.

Use Scenario: Isolated 48 V-to-12 V intermediate bus converter in 5G base station power shelf.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology operating at 350 kHz.

Use Value: 37.6 nC Q_rr and soft recovery minimize reverse recovery spikes, enabling reliable operation without snubbers and reducing EMI filter size by 40%.

Industrial Motor Drive Inverter Stage

EV On-Board Charger (OBC) PFC Stage

Use Scenario: 15 kW servo drive with three-phase IGBT-based inverter and active front-end rectifier.

IC Role / Device Role / Timing Role: High-side switch in bidirectional active rectifier stage, commutated at 20 kHz with SiC gate drivers.

Use Value: 175 °C T_j rating and 461 mJ single-pulse avalanche energy allow safe operation during short-circuit events without desaturation protection circuitry.

Use Scenario: 6.6 kW two-stage OBC with interleaved boost PFC and CLLC DC-DC stages.

IC Role / Device Role / Timing Role: Low-side switch in interleaved boost PFC cell, switching at 100 kHz with digital CCM control.

Use Value: 0.57 °C/W R_thJC enables direct mounting to aluminum chassis, eliminating need for thermal interface material and reducing thermal resistance by 35% vs. standard QFN packages.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB110N10N5LF	Higher R_DS(on) (11 mΩ), lower Q_g (18 nC), same PG-WHTFN-9 package	Better suited for lower-current, higher-frequency applications where gate drive loss dominates	Select when peak current <60 A and switching frequency >1 MHz; avoid for >100 A VRM phases
IRFH7185TRPBF	Lower voltage rating (80 V), higher R_DS(on) (6.8 mΩ), different PQFN-8 package	Limited to 48 V non-isolated converters; lacks 175 °C rating and dual thermal path	Only viable for cost-sensitive telecom applications with strict 48 V input and ambient <105 °C

Compared with IPB110N10N5LF and IRFH7185TRPBF, IQE057N10NM6CGSCATMA1 delivers superior power density via its 5.7 mΩ/175 °C combination and dual thermal interface - making it the only option among the three qualified for 98 A continuous operation in sealed 1U server chassis.

Availability

IQE057N10NM6CGSCATMA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's certified production lines.

Supply support for IQE057N10NM6CGSCATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of leadership in silicon power MOSFET innovation.

This part belongs to the OptiMOSTM 6 product line - engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for IQE057N10NM6CGSCATMA1 at 100 °C case temperature?

The maximum continuous drain current is 69 A at T_C = 100 °C and V_GS = 10 V, as specified in Table 2 of the Rev. 2.1 datasheet. This derating accounts for thermal resistance and ensures safe operation within the 175 °C maximum junction temperature limit under steady-state conditions.

Does IQE057N10NM6CGSCATMA1 support dual-side cooling, and what are the thermal resistances?

Yes - the PG-WHTFN-9 package provides two independent thermal paths: R_thJC = 0.57 °C/W (typical, bottom side) and ≤1.4 °C/W (top side), enabling heat extraction from both PCB and heatsink surfaces. This is confirmed in Table 3 and Package Outlines section of the datasheet.

What is the gate plateau voltage, and why is it important for drive design?

The gate plateau voltage is 4.5 V (typical), measured during gate charge testing at V_DD = 50 V and I_D = 12.5 A. It defines the Miller region where the MOSFET remains in linear mode; accurate knowledge of this value ensures proper gate driver selection and prevents unintended partial turn-on during high dv/dt events.

Is the internal body diode suitable for synchronous rectification, and what are its key parameters?

Yes - the integrated body diode is optimized for synchronous rectification, with V_SD = 0.81 V (typ) at I_F = 25 A and T_j = 25 °C, and Q_rr = 37.6 nC at diF/dt = 100 A/µs. These values are explicitly listed in Table 7 and confirm suitability for hard- and soft-switching topologies up to 1 MHz.

IQE057N10NM6CGSCATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IQE057N10NM6CGSCATMA1 FAQ

1.How can I place an order for IQE057N10NM6CGSCATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IQE057N10NM6CGSCATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IQE057N10NM6CGSCATMA1 reliable?

The price and inventory of IQE057N10NM6CGSCATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IQE057N10NM6CGSCATMA1 is usually 5 days.

3.What payment methods are accepted for IQE057N10NM6CGSCATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IQE057N10NM6CGSCATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IQE057N10NM6CGSCATMA1?

IQE057N10NM6CGSCATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IQE057N10NM6CGSCATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IQE057N10NM6CGSCATMA1?

For technical support, including IQE057N10NM6CGSCATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IQE057N10NM6CGSCATMA1 requirements.

6.How does Aetrix verify that IQE057N10NM6CGSCATMA1 is sourced from the original manufacturer or authorized distributors?

All IQE057N10NM6CGSCATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IQE057N10NM6CGSCATMA1 meets industry standards.

7.What is the process for return or replacement of IQE057N10NM6CGSCATMA1?

All IQE057N10NM6CGSCATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IQE057N10NM6CGSCATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IQE057N10NM6CGSCATMA1 part is unused and in its original packaging.

Return procedure for IQE057N10NM6CGSCATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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