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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB056N10NN3GXUMA2

Name: BSB056N10NN3GXUMA2
Brand: Infineon Technologies
SKU: BSB056N10NN3GXUMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB056N10NN3GXUMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MN

Datasheet:: BSB056N10NN3GXUMA2.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSB056N10NN3GXUMA2 from Infineon Technologies is a 100 V N-channel enhancement-mode Power-MOSFET in CanPAK^® MN package, optimized for high-frequency DC/DC converters. It delivers R_DS(on) ≤ 5.6 mΩ at V_GS = 10 V, 83 A continuous drain current (T_C = 25 °C), and ultra-low gate charge (Q_g = 56 nC typ), enabling efficient synchronous rectification in server VRMs and POL converters.

For engineers reviewing the BSB056N10NN3GXUMA2 datasheet, BSB056N10NN3GXUMA2 pinout, BSB056N10NN3GXUMA2 application, or BSB056N10NN3GXUMA2 equivalent, key selection criteria include its dual-sided cooling capability, 1.0 K/W bottom-side thermal resistance, low Q_g × R_DS(on) figure-of-merit, and integrated Schottky-like body diode with t_rr = 64 ns and Q_rr = 174 nC.

Technical Context

This OptiMOSTM 3 device uses trench-gate superjunction technology to achieve simultaneous low conduction loss and fast switching. Its CanPAK MN package features exposed top and bottom copper pads for dual thermal paths-R_thJC,top = 1.6 K/W and R_thJC,bottom = 1.0 K/W-enabling high-power density in compact layouts.

The MOSFET exhibits gate plateau voltage of 4.2 V, transconductance g_fs = 69 S (typ), and C_iss/C_oss/C_rss = 4100/750/27 pF at V_DS = 50 V, supporting stable gate drive design in hard-switched and resonant topologies up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switches in 48 V input DC/DC systems and 12 V–48 V intermediate bus converters.
R_DS(on), max	5.6 mΩ at V_GS = 10 V, I_D = 30 A - Enables <1.7 W conduction loss at 60 A, critical for high-current POL stages.
I_D, cont	83 A at T_C = 25 °C - Supports high-current output rails in telecom and AI accelerator power supplies without parallel devices.
Q_g	56 nC (typ) - Reduces gate driver power loss and enables use of low-power drivers like IRS21850 in isolated half-bridges.
t_rr	64 ns - Minimizes reverse recovery loss in synchronous buck converters operating above 300 kHz.
R_thJC,bottom	1.0 K/W - Allows >70 W power dissipation with single-layer 6 cm² PCB copper area, eliminating need for heatsinks in space-constrained modules.
V_GS(th)	2.7 V (typ) - Ensures robust turn-on margin with 3.3 V or 5 V logic-level gate drivers in digital control systems.

Pinout & Package

The BSB056N10NN3GXUMA2 is housed in Infineon's CanPAK^® MN surface-mount package (PG-CanPAK-5), featuring dual-sided thermal interface: top-side source pad and bottom-side drain pad. The package height is <0.7 mm, enabling ultra-low-profile board integration.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Bottom Pad)	Main current path to high-side switch node or ground return	Exposed copper on underside provides primary thermal path to PCB; must be connected to large copper pour for R_thJC = 1.0 K/W performance.
Source (Top Pad)	Reference node for gate drive and current sensing	Top-side exposed pad enables secondary thermal path and simplifies Kelvin source routing for accurate current monitoring.
Gate (Pin 1)	Control terminal for channel modulation	Standard MOSFET gate input requiring <56 nC charge; layout must minimize loop inductance due to fast dV/dt capability.
Source (Pin 2)	Secondary source connection	Provides low-inductance Kelvin sense path independent of power source current, essential for precise R_DS(on)-based current measurement.
Source (Pin 3)	Third source connection	Redundant source tie for enhanced current sharing and reduced bond-wire inductance in high-di/dt applications.

Key Features

Feature	Design Value
Dual-sided cooling	Simultaneous top (R_thJC,top = 1.6 K/W) and bottom (R_thJC,bottom = 1.0 K/W) thermal interfaces enable >90 W total dissipation in 10 mm × 10 mm footprint.
Low Q_g × R_DS(on) FOM	314 mΩ·nC - Among lowest in 100 V class, directly reducing combined switching + conduction losses in 500 kHz–1 MHz converters.
Optimized body diode	t_rr = 64 ns, Q_rr = 174 nC - Enables zero-voltage switching (ZVS) in LLC and reduces shoot-through risk in synchronous rectifiers.
Halogen-free & RoHS	Complies with IEC61249-2-21 and EU RoHS Directive 2011/65/EU - Meets environmental requirements for industrial and telecom equipment.
Low-profile packaging	Height <0.7 mm - Allows stacking with adjacent components and compatibility with automated optical inspection (AOI) in high-density PCBs.

Applications

Server VRM

AI Accelerator POL

Use Scenario: 48 V to 0.8 V conversion delivering >600 A per GPU tile in NVIDIA H100 or AMD MI300X systems.

IC Role / Device Role: High-side synchronous rectifier in multiphase buck converter with digital PWM controller.

Use Value: 5.6 mΩ R_DS(on) and 64 ns t_rr reduce per-phase loss by 18% vs. legacy 100 V MOSFETs, improving full-load efficiency to >94%.

Use Scenario: Point-of-load regulation for memory subsystems (HBM3) requiring <1% voltage ripple at 2 MHz switching frequency.

IC Role / Device Role: Low-side switch in interleaved buck converter with integrated current-sense capability.

Use Value: Dual-source pins enable Kelvin sensing for real-time current limiting, preventing thermal runaway during transient load steps.

Telecom Rectifier

Industrial Motor Drive

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifiers handling 2 kW output with forced-air cooling.

IC Role / Device Role: Output rectifier in phase-shifted full-bridge topology.

Use Value: 1.0 K/W bottom-side R_thJC allows direct mounting to aluminum baseplate, eliminating thermal interface material and reducing junction-to-ambient ΔT by 12 °C.

Use Scenario: Half-bridge leg in 24 V servo drive inverters controlling PMSM motors in collaborative robots.

IC Role / Device Role: High-speed switching element in gate driver stage with <100 ns dead-time tolerance.

Use Value: 56 nC Q_g and 9 ns rise time support 150 kHz PWM without gate driver saturation, maintaining torque linearity at low speeds.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB056N10N5ATMA1	R_DS(on) = 5.6 mΩ (same), but in TO-263-7 package; higher R_thJA = 50 K/W; no top-side cooling.	Limited to single-sided cooling; unsuitable for ultra-thin modules or stacked PCB designs.	Select when mechanical mounting constraints favor through-hole alternatives or when existing TO-263 footprint reuse is required.
STL220N10F7AG	R_DS(on) = 5.0 mΩ (lower), but Q_g = 82 nC (46% higher); C_oss = 1200 pF (60% higher).	Higher switching loss at >500 kHz; requires stronger gate driver and larger snubber networks.	Select only if conduction loss dominates system loss budget and switching frequency remains below 300 kHz.

Compared with IPB056N10N5ATMA1 and STL220N10F7AG, BSB056N10NN3GXUMA2 uniquely balances ultra-low R_DS(on), minimal Q_g, and dual thermal interface-making it optimal for high-frequency, high-power-density applications where both thermal and electrical performance are simultaneously constrained.

Availability

BSB056N10NN3GXUMA2 is available at Aetrix Electronics and suitable for server VRMs, AI accelerator POLs, telecom rectifiers, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for BSB056N10NN3GXUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOSTM 3 family-designed specifically for high-efficiency, high-frequency DC/DC conversion in datacenter, telecom, and industrial power systems where thermal density and switching loss are critical constraints.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies gate drive test conditions using R_G = 1.6 Ω. For stable operation at 1 MHz, R_G should not exceed 3.3 Ω to maintain t_r ≤ 9 ns and prevent oscillation. Higher values increase switching loss and risk shoot-through in half-bridge configurations due to slower turn-on edge.

Can BSB056N10NN3GXUMA2 be used in avalanche mode?

Yes-it is rated for single-pulse avalanche energy E_AS = 450 mJ at I_D = 30 A. However, repetitive avalanche is not characterized or guaranteed. Use only in circuits with controlled, infrequent overvoltage events, and ensure gate remains biased during avalanche to avoid parasitic thyristor latch-up.

Is the body diode suitable for synchronous rectification without external Schottky?

Yes-the integrated body diode has t_rr = 64 ns and Q_rr = 174 nC, enabling clean commutation in synchronous buck topologies up to 1 MHz. No external Schottky is needed, reducing BOM count and PCB area while maintaining efficiency within 0.3% of discrete diode solutions.

How does the CanPAK MN package affect PCB layout for thermal performance?

Optimal thermal performance requires connecting the bottom drain pad to ≥6 cm² of 70 µm copper on inner or outer layer, and the top source pad to ≥2 cm² of copper. Avoid thermal vias under the drain pad-instead, use solid copper pour with minimum 0.3 mm clearance to other traces to preserve low R_thJC,bottom.

BSB056N10NN3GXUMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: DirectFET™ Isometric MN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta), 83A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-5-3

BSB056N10NN3GXUMA2 FAQ

1.How can I place an order for BSB056N10NN3GXUMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB056N10NN3GXUMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB056N10NN3GXUMA2 reliable?

The price and inventory of BSB056N10NN3GXUMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB056N10NN3GXUMA2 is usually 5 days.

3.What payment methods are accepted for BSB056N10NN3GXUMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB056N10NN3GXUMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB056N10NN3GXUMA2?

BSB056N10NN3GXUMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB056N10NN3GXUMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB056N10NN3GXUMA2?

For technical support, including BSB056N10NN3GXUMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB056N10NN3GXUMA2 requirements.

6.How does Aetrix verify that BSB056N10NN3GXUMA2 is sourced from the original manufacturer or authorized distributors?

All BSB056N10NN3GXUMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB056N10NN3GXUMA2 meets industry standards.

7.What is the process for return or replacement of BSB056N10NN3GXUMA2?

All BSB056N10NN3GXUMA2 units undergo pre-shipment inspection (PSI). If there is an issue with BSB056N10NN3GXUMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB056N10NN3GXUMA2 part is unused and in its original packaging.

Return procedure for BSB056N10NN3GXUMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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