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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies BSB056N10NN3GXUMA3

Name: BSB056N10NN3GXUMA3
Brand: Infineon Technologies
SKU: BSB056N10NN3GXUMA3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: BSB056N10NN3GXUMA3

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MN

Datasheet:: BSB056N10NN3GXUMA3.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

BSB056N10NN3GXUMA3 from Infineon Technologies is a 100 V, 5.6 mΩ N-channel enhancement-mode Power-MOSFET in CanPAK^® MN package, optimized for high-frequency DC/DC converters. It delivers 83 A continuous drain current at T_C = 25 °C, features dual-sided cooling, low-profile height (<0.7 mm), and an industry-leading gate charge × R_DS(on) figure-of-merit (FOM) of 56 nC × 5.6 mΩ.

For engineers reviewing the BSB056N10NN3GXUMA3 datasheet, BSB056N10NN3GXUMA3 pinout, BSB056N10NN3GXUMA3 application, or BSB056N10NN3GXUMA3 equivalent, this device is selected for high-efficiency, space-constrained power stages requiring low conduction loss, fast switching (t_r = 9 ns, t_f = 8 ns), and thermal performance enabled by top- and bottom-side thermal interfaces.

Technical Context

This OptiMOSTM 3 MOSFET employs trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining robust avalanche capability (E_AS = 450 mJ). Its gate threshold voltage (V_GS(th) = 2.0–3.5 V) ensures reliable turn-on with standard 5 V or 10 V gate drivers.

The device integrates a low-Q_rr (174 nC) body diode with fast reverse recovery (t_rr = 64 ns), enabling efficient synchronous rectification and reducing switching losses in hard-switched topologies. Thermal resistance from junction-to-case (top) is 1.6 K/W, and junction-to-case (bottom) is 1.0 K/W - confirming true dual-sided cooling capability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switches in 48 V input DC/DC systems and industrial 24–48 V bus applications.
R_DS(on), max	5.6 mΩ @ V_GS = 10 V, I_D = 30 A - Enables <1.7 W conduction loss at 60 A, critical for high-current POL converters.
Q_g, typ	56 nC - Low total gate charge reduces driver power demand and enables >1 MHz operation with minimal gate drive loss.
t_r / t_f	9 ns / 8 ns @ V_DD = 50 V, I_D = 30 A - Fast edge rates minimize overlap loss in hard-switched half-bridges.
R_thJC (top/bottom)	1.6 K/W / 1.0 K/W - Dual thermal paths allow PCB-mounted heatsinking on both sides, supporting >78 W power dissipation at T_C = 25 °C.
Q_rr	174 nC @ V_R = 50 V, I_F = 30 A - Low reverse recovery charge suppresses voltage spikes and EMI in synchronous buck output stages.
E_AS	450 mJ - Robust single-pulse avalanche rating supports reliable operation under transient overvoltage conditions.

Pinout & Package

BSB056N10NN3GXUMA3 uses the surface-mount CanPAK^® MN package (MG-WDSON-5), featuring exposed top and bottom thermal pads for dual-sided cooling and a 0.65 mm profile. The package has five terminals: three source pins (S1–S3), one drain pad (D), and one gate pad (G).

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; accepts 0–20 V gate-source voltage; low input capacitance (C_iss = 4100–5500 pF) eases high-speed driving.
D	Drain	Main high-side power terminal; electrically and thermally connected to large copper area on PCB bottom side.
S1–S3	Source	Three parallel source connections reduce parasitic inductance and improve current sharing; tied internally to substrate.

Key Features

Feature	Design Value
Dual-sided cooling	Separate top- and bottom-side thermal interfaces enable simultaneous heatsink attachment - essential for ultra-thin power modules and stacked PCB designs.
Low Q_g × R_DS(on) FOM	314 (pC·Ω) - Industry-leading figure-of-merit confirms superior trade-off between switching speed and conduction loss for high-frequency SMPS.
Optimized body diode	Q_rr = 174 nC, t_rr = 64 ns - Reduces dead-time-induced shoot-through risk and improves light-load efficiency in synchronous rectifiers.
Halogen-free & RoHS	Compliant with IEC61249-2-21 and EU RoHS Directive - meets environmental requirements for automotive and industrial end equipment.

Applications

Server VRM

Industrial DC/DC Converter

Use Scenario: Point-of-load (POL) converter supplying core voltage to high-performance CPUs in 1U rack servers.

IC Role / Device Role: High-side synchronous rectifier switch in multiphase buck topology operating at 500 kHz–1 MHz.

Use Value: 5.6 mΩ R_DS(on) and 56 nC Q_g minimize combined conduction + switching loss, enabling >95% efficiency at 60 A load.

Use Scenario: Isolated 48 V-to-12 V DC/DC module for programmable logic controllers (PLCs) and motor drives.

IC Role / Device Role: Primary-side switch in active-clamp forward or LLC resonant converter.

Use Value: 100 V V_DS rating and 450 mJ E_AS withstand bus transients; dual cooling supports derating-free operation at 75 °C ambient.

Telecom Rectifier

Automotive DC/DC Module

Use Scenario: Secondary-side synchronous rectifier in telecom 48 V AC/DC front-end supplies.

IC Role / Device Role: Low-side switch in synchronous rectification stage, replacing Schottky diodes.

Use Value: 0.9–1.2 V V_SD and 65 A I_S support high-current, low-forward-drop operation - cutting rectifier losses by >40% vs. discrete diodes.

Use Scenario: 12 V/48 V bidirectional DC/DC converter in 48 V mild-hybrid vehicle architectures.

IC Role / Device Role: Bidirectional switch in dual-active-bridge (DAB) topology, conducting in both directions via body diode and channel.

Use Value: Low Q_rr and symmetric R_DS(on) ensure balanced conduction loss and minimal reverse recovery stress during phase-shift transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB056N10N5ATMA1	R_DS(on) = 5.6 mΩ (same), but Q_g = 62 nC; TO-263-7 package with single-sided cooling only.	Lacks dual thermal interface; requires larger PCB copper area for equivalent thermal performance.	Select when board layout restricts CanPAK footprint but allows larger heatsink mounting on PCB bottom only.
BSZ056N10NS3GATMA1	R_DS(on) = 5.6 mΩ, Q_g = 52 nC, but in TSDSON-8 package; R_thJC = 2.0 K/W (bottom only); no top-side cooling.	Higher thermal resistance limits power density; unsuitable for >60 A continuous operation in thin form factors.	Prefer for cost-sensitive designs where peak efficiency is secondary to component count reduction and standard SMT placement.

Compared with IPB056N10N5ATMA1 and BSZ056N10NS3GATMA1, BSB056N10NN3GXUMA3 uniquely delivers dual-sided thermal management within a sub-0.7 mm profile - enabling higher power density in space-constrained, high-reliability power stages without compromising thermal headroom.

Availability

BSB056N10NN3GXUMA3 is available at Aetrix Electronics and suitable for server VRMs, industrial DC/DC converters, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for BSB056N10NN3GXUMA3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to the OptiMOSTM 3 family - engineered specifically for high-efficiency, high-frequency DC/DC conversion in data center, industrial, and telecom infrastructure where low R_DS(on), fast switching, and thermal scalability are critical.

FAQ

What is the maximum continuous drain current for BSB056N10NN3GXUMA3 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is 52 A per the datasheet's "Maximum ratings" table (Table 2). This derating reflects thermal limits under real-world PCB cooling conditions with 6 cm² copper area and vertical mounting in still air.

Does BSB056N10NN3GXUMA3 support gate drive voltages below 10 V?

Yes - it is fully characterized down to V_GS = 6 V, where R_DS(on) rises to 6.2 mΩ (max). The gate threshold voltage range is 2.0–3.5 V, ensuring reliable turn-on with 5 V logic-level drivers, though full R_DS(on) spec requires ≥10 V.

Can the top-side thermal pad be left unconnected in PCB layout?

No - leaving the top thermal pad unconnected forfeits the dual-cooling advantage and increases junction temperature by ~15–20 °C at rated current. The datasheet specifies thermal resistance values assume both top and bottom pads are soldered to dedicated copper planes with ≥6 cm² area each.

Is the body diode suitable for continuous reverse conduction in bidirectional topologies?

Yes - the device supports 65 A continuous forward current (I_S) and 316 A pulsed current (I_S,pulse) through its integrated body diode. Its low V_SD (0.9–1.2 V) and controlled Q_rr make it viable for bidirectional DAB or CLLC converters where reverse conduction occurs regularly.

BSB056N10NN3GXUMA3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: DirectFET™ Isometric MN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 9A (Ta), 83A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: MG-WDSON-5-3

BSB056N10NN3GXUMA3 FAQ

1.How can I place an order for BSB056N10NN3GXUMA3 through Aetrix?

Please submit a Request for Quotation (RFQ) for BSB056N10NN3GXUMA3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for BSB056N10NN3GXUMA3 reliable?

The price and inventory of BSB056N10NN3GXUMA3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BSB056N10NN3GXUMA3 is usually 5 days.

3.What payment methods are accepted for BSB056N10NN3GXUMA3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BSB056N10NN3GXUMA3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for BSB056N10NN3GXUMA3?

BSB056N10NN3GXUMA3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your BSB056N10NN3GXUMA3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for BSB056N10NN3GXUMA3?

For technical support, including BSB056N10NN3GXUMA3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BSB056N10NN3GXUMA3 requirements.

6.How does Aetrix verify that BSB056N10NN3GXUMA3 is sourced from the original manufacturer or authorized distributors?

All BSB056N10NN3GXUMA3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BSB056N10NN3GXUMA3 meets industry standards.

7.What is the process for return or replacement of BSB056N10NN3GXUMA3?

All BSB056N10NN3GXUMA3 units undergo pre-shipment inspection (PSI). If there is an issue with BSB056N10NN3GXUMA3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The BSB056N10NN3GXUMA3 part is unused and in its original packaging.

Return procedure for BSB056N10NN3GXUMA3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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