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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRLZ34NS MOSFET N-CH 55V 30A D2PAK Infineon Technologies	6,587	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	30A (Tc)	4V, 10V	35mOhm @ 16A, 10V	2V @ 250µA	25 nC @ 5 V	±16V	880 pF @ 25 V	-	3.8W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRLZ34NL MOSFET N-CH 55V 30A TO262 Infineon Technologies	7,735	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	30A (Tc)	4V, 10V	35mOhm @ 16A, 10V	2V @ 250µA	25 nC @ 5 V	±16V	880 pF @ 25 V	-	3.8W (Ta), 68W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRFR4104TR MOSFET N-CH 40V 42A DPAK Infineon Technologies	8,911	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	42A (Tc)	10V	5.5mOhm @ 42A, 10V	4V @ 250µA	89 nC @ 10 V	±20V	2950 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRFR4104TRL MOSFET N-CH 40V 42A DPAK Infineon Technologies	3,351	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	42A (Tc)	10V	5.5mOhm @ 42A, 10V	4V @ 250µA	89 nC @ 10 V	±20V	2950 pF @ 25 V	-	140W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRFIZ34E MOSFET N-CH 60V 21A TO220AB FP Infineon Technologies	8,065	RFQ	Datasheet	HEXFET®	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	60 V	21A (Tc)	10V	42mOhm @ 11A, 10V	4V @ 250µA	34 nC @ 10 V	±20V	700 pF @ 25 V	-	37W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-FP
AUIRF2804WL MOSFET N-CH 40V 240A TO262-3 Infineon Technologies	2,254	RFQ	Datasheet	HEXFET®	TO-262-3 Wide Leads	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	240A (Tc)	10V	1.8mOhm @ 187A, 10V	4V @ 250µA	225 nC @ 10 V	±20V	7978 pF @ 25 V	-	300W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262-3 Wide
GS-065-008-6-L-TR GS-065-008-6-L-TR Infineon Technologies Canada Inc.	4,618	RFQ	-	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	700 V	8.8A (Tc)	6V	235mOhm @ 2.2A, 6V	2.6V @ 1.7mA	1.6 nC @ 6 V	+7V, -10V	54 pF @ 400 V	-	-	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-PDFN (5x6)
IRL3102 MOSFET N-CH 20V 61A TO220AB Infineon Technologies	7,689	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	61A (Tc)	4.5V, 7V	13mOhm @ 37A, 7V	700mV @ 250µA (Min)	58 nC @ 4.5 V	±10V	2500 pF @ 15 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Through Hole	TO-220AB
IRFHM830TR2PBF MOSFET N-CH 30V 21A PQFN Infineon Technologies	5,986	RFQ	Datasheet	-	8-VQFN Exposed Pad	Cut Tape (CT)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	21A (Ta), 40A (Tc)	-	3.8mOhm @ 20A, 10V	2.35V @ 50µA	31 nC @ 10 V	-	2155 pF @ 25 V	-	-	-	-	-	Surface Mount	PQFN (3x3)
94-2989 MOSFET N-CH 55V 64A D2PAK Infineon Technologies	2,749	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	55 V	64A (Tc)	10V	14mOhm @ 32A, 10V	4V @ 250µA	81 nC @ 10 V	±20V	1970 pF @ 25 V	-	3.8W (Ta), 130W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK

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