Infineon Technologies IRLZ34NL

Overview

IRLZ34NL from Infineon Technologies is a logic-level N-channel MOSFET in TO-262 (DPAK) package, rated for 55 V V_DS, 60 A continuous drain current at T_C = 25 °C, and 11.1 mΩ R_DS(on) at V_GS = 10 V. It operates with gate threshold voltage as low as 1.0 V and supports fast switching in DC-DC converters and motor control stages.

For engineers reviewing the IRLZ34NL datasheet, IRLZ34NL pinout, IRLZ34NL application, or IRLZ34NL equivalent, key selection criteria include its 11.1 mΩ on-resistance at 10 V gate drive, 60 A thermal-limited current capability, avalanche energy rating of 175 mJ, and compatibility with 3.3 V/5 V microcontroller GPIOs without level-shifting.

Technical Context

This MOSFET uses planar stripe silicon technology optimized for low conduction loss and robust unclamped inductive switching (UIS). Its gate charge profile shows Q_g = 58 nC, Q_gs = 12 nC, and Q_gd = 29 nC at V_DS = 28 V, enabling efficient PWM operation up to 100 kHz in synchronous buck topologies.

The device features an integrated body diode with t_rr = 60 ns and Q_rr = 45 nC at I_F = 27 A, V_DD = 25 V, and dI/dt = 100 A/µs - suitable for freewheeling in half-bridge motor drivers where reverse recovery behavior directly impacts shoot-through risk.

Key Specifications

Pinout & Package

IRLZ34NL is housed in a surface-mount TO-262 (DPAK) package with exposed drain pad for thermal conduction. The package measures 10.16 × 4.70 × 2.39 mm and is lead-free (RoHS-compliant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLZ44N and STP55NF06L, the IRLZ34NL delivers the lowest R_DS(on) among logic-level 55 V MOSFETs in TO-262, enabling highest power density in thermally constrained 24–48 V industrial and automotive power stages.

Availability

IRLZ34NL is available at Aetrix Electronics and suitable for brushless DC motor drivers, industrial DC-DC converters, solar charge controllers, and automotive body control modules requiring stable component supply across multi-year production cycles.

Supply support for IRLZ34NL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRLZ series targets logic-level gate drive applications in industrial and automotive power conversion, emphasizing low R_DS(on), robust UIS performance, and compatibility with 3.3 V/5 V digital controllers.

FAQ

What is the maximum safe operating temperature for IRLZ34NL junction?

The absolute maximum junction temperature is 175 °C. Operation above 150 °C significantly accelerates parametric drift and reduces long-term reliability. Thermal design must ensure T_J remains ≤150 °C under worst-case ambient and power dissipation conditions, using the published R_θJC = 1.0 °C/W and R_θJA = 62 °C/W values.

Can IRLZ34NL be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. The positive temperature coefficient of R_DS(on) provides inherent current sharing, yet gate drive imbalance can cause uneven current distribution. Use individual gate resistors (≤10 Ω) and Kelvin-source routing to minimize loop inductance and ensure stable parallel operation up to 120 A total.

Does IRLZ34NL require a gate resistor, and what value is recommended?

Yes - a series gate resistor is mandatory to control dV/dt and prevent oscillation. For 20–100 kHz PWM with 1 A driver capability, a 10–22 Ω resistor balances switching speed and EMI suppression. Lower values increase EMI and stress the driver; higher values slow switching and raise losses. Layout must minimize gate loop inductance with short, wide traces.

Is the body diode in IRLZ34NL suitable for synchronous rectification?

No - while the body diode is functional, its reverse recovery time (t_rr = 60 ns) and Q_rr = 45 nC make it unsuitable for high-frequency synchronous rectification where fast, low-Q_rr diodes are required. Use dedicated Schottky or GaN-based synchronous rectifiers instead; the IRLZ34NL body diode is intended only for freewheeling in lower-frequency motor or relay circuits.