Infineon Technologies IRLZ34NS

Overview

IRLZ34NS from Infineon Technologies is a 55 V, 30 A, 0.035 Ω (at V_GS = 10 V) N-channel logic-level MOSFET in TO-262 (DPAK) package, designed for DC-DC converters, motor control, and high-efficiency switching power supplies where low gate drive voltage and fast switching are required.

For engineers reviewing the IRLZ34NS datasheet, IRLZ34NS pinout, IRLZ34NS application, or IRLZ34NS equivalent, key selection criteria include R_DS(on) at 4.5 V, peak pulsed drain current (I_DM = 110 A), avalanche energy rating (E_AS = 250 mJ), and SOA compliance under repetitive pulse conditions.

Technical Context

This MOSFET uses planar stripe silicon technology with optimized gate oxide thickness to achieve enhanced dV/dt immunity and robust avalanche performance. It features a fully rated body diode with t_rr = 85 ns and Q_rr = 75 nC at I_F = 30 A, V_DD = 25 V, and T_J = 125 °C.

The device operates with gate threshold voltage V_GS(th) = 1.0–2.0 V and exhibits typical total gate charge Q_g = 35 nC at V_GS = 10 V, enabling efficient driving from 3.3 V or 5 V microcontrollers without external level-shifting circuitry.

Key Specifications

Pinout & Package

IRLZ34NS is housed in a TO-262 (DPAK) surface-mount package with exposed drain pad for thermal enhancement. The package measures 10.16 × 4.70 × 2.39 mm (0.400 × 0.185 × 0.094 in) and is lead-free (RoHS-compliant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRFZ44N and STP30NF20, IRLZ34NS uniquely balances true 3.3 V logic compatibility, 250 mJ avalanche robustness, and 35 nC gate charge-making it optimal for space-constrained, MCU-driven power stages demanding reliability and simplicity.

Availability

IRLZ34NS is available at Aetrix Electronics and suitable for brushless DC motor control, DC-DC synchronous buck converters, and industrial solid-state relay designs requiring stable component supply across production lifecycles.

Supply support for IRLZ34NS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRLZ series targets logic-level power switching applications-designed specifically for direct interface with low-voltage microcontrollers and FPGAs in compact, high-efficiency power conversion systems.

FAQ

Is IRLZ34NS suitable for 3.3 V microcontroller gate drive without a level shifter?

Yes. With V_GS(th) = 1.0–2.0 V and guaranteed R_DS(on) ≤ 0.055 Ω at V_GS = 4.5 V, IRLZ34NS fully enhances using standard 3.3 V GPIO outputs. No external level shifter is required for reliable switching up to 30 A DC.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 30 A at T_C = 100 °C with proper PCB copper area (≥ 10 cm² 2 oz Cu). Derating is linear below that: at T_C = 80 °C, max I_D ≈ 36 A; at T_C = 125 °C, max I_D ≈ 22 A per SOA curve.

Does IRLZ34NS have avalanche rating, and how is it tested?

Yes. IRLZ34NS is 100% tested for single-pulse avalanche energy E_AS = 250 mJ at T_J = 25 °C, using standardized test circuit per JEDEC JESD24-11. This rating applies to unclamped inductive switching events and is not intended for repetitive avalanche operation.

Can IRLZ34NS replace IRLZ24N in an existing design?

Yes, with improved performance. IRLZ34NS offers lower R_DS(on) (0.035 Ω vs. 0.07 Ω), higher I_D (30 A vs. 12 A), and higher E_AS (250 mJ vs. 120 mJ) in the same TO-262 package. Layout and gate drive remain compatible; thermal design benefits from reduced conduction loss.