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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AUIRF2804WL

Name: AUIRF2804WL
Brand: Infineon Technologies
SKU: AUIRF2804WL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AUIRF2804WL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Wide Leads

Datasheet:: AUIRF2804WL.pdf

Description:: MOSFET N-CH 40V 240A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AUIRF2804WL from Infineon Technologies (formerly International Rectifier) is an automotive-grade N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 WideLead package, rated for 40 V V(BR)DSS, 1.57 mΩ typical RDS(on) at VGS = 10 V, 240 A continuous drain current (package-limited), and 175°C maximum junction temperature. It delivers ultra-low conduction loss and fast switching for high-efficiency DC-DC conversion and motor control in engine management and battery systems.

For engineers reviewing the AUIRF2804WL datasheet, AUIRF2804WL pinout, AUIRF2804WL application, or AUIRF2804WL equivalent, key selection criteria include its 1.8 mΩ max RDS(on), 225 nC total gate charge, 175°C thermal rating, AEC-Q101 qualification, and body diode reverse recovery performance (trr = 29–44 ns, Qrr = 68–102 nC).

Technical Context

This MOSFET employs advanced planar silicon process technology to achieve industry-leading on-resistance per die area while maintaining robust avalanche capability. Its design integrates a low-inductance internal structure (LD = 4.5 nH, LS = 7.5 nH) and optimized gate charge profile (Qgd = 47 nC typ.) to minimize switching losses in hard-switched topologies.

The device supports repetitive unclamped inductive switching up to TJmax with validated energy limits (EAS = 420 mJ, EAR = 300 mJ), enabled by thermally stable SOA and precise threshold voltage control (VGS(th) = 2.0–4.0 V). Its Coss eff. = 2115 pF ensures predictable turn-off behavior under high dv/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V(BR)DSS	40 V - Withstands up to 40 V drain-source blocking voltage before avalanche onset; suitable for 12 V/24 V automotive bus systems.
RDS(on) max	1.8 mΩ @ VGS = 10 V, TJ = 25°C - Enables <1.5 W conduction loss at 200 A, critical for high-current power stages.
ID (Package)	240 A @ TC = 25°C - Package-limited continuous current defines heatsink sizing and PCB copper requirements.
Qg total	225 nC - Determines gate driver power demand and switching speed trade-offs in 100–500 kHz converters.
TJ max	175°C - Allows operation in under-hood environments without derating below ambient +150°C.
EAS	420 mJ - Specifies single-pulse avalanche energy handling capability during fault transients in motor drives.
trr / Qrr	29–44 ns / 68–102 nC - Quantifies body diode recovery behavior affecting shoot-through risk and snubber design.

Pinout & Package

TO-262 WideLead (3-lead, straight lead variant of TO-220AB) with isolated metal tab (Drain-connected). Mounting via M3 screw (1.1 N·m torque); case-to-sink thermal resistance RθCS = 0.50 °C/W with greased surface.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output path	Electrically connected to exposed metal tab; requires insulated mounting or direct heatsink connection.
Source	Power return reference node	Low-inductance source terminal (LS = 7.5 nH); critical for gate drive loop integrity and current sensing accuracy.
Gate	Control input for channel modulation	High-impedance MOS gate requiring <225 nC charge; sensitive to ESD (HBM Class H3A, ±4 kV).

Key Features

Feature	Design Value
Ultra-low RDS(on)	1.57 mΩ typ. @ VGS = 10 V enables >98% efficiency in 200 A synchronous rectifiers.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to TJmax, eliminating need for external clamping in brushed motor drivers.
175°C junction rating	Supports full current delivery in under-hood modules (e.g., starter relays, fuel pumps) without thermal derating.
AEC-Q101 qualified	Passed stress tests per AEC-Q101-001/002/005, including HBM/MM/CDM ESD, temperature cycling, and HTGB.
RoHS-compliant & lead-free	Meets automotive environmental compliance requirements; compatible with Pb-free reflow profiles (peak 260°C, 10 s).

Applications

Engine Control Unit (ECU) High-Side Driver

Automotive DC-DC Converter Primary Switch

Use Scenario: Driving solenoid valves and fuel injectors in gasoline/diesel ECUs with 12 V nominal supply and transient spikes up to 40 V.

IC Role / Device Role / Timing Role: High-side power switch controlling load current with fast turn-on (td(on) = 19 ns) and low RDS(on) to minimize I²R heating.

Use Value: 1.8 mΩ RDS(on) reduces power loss by >40% vs. legacy 3.5 mΩ MOSFETs, enabling smaller heatsinks in space-constrained ECU housings.

Use Scenario: Primary-side switching element in 12 V → 48 V bidirectional DC-DC converters for mild hybrid vehicles.

IC Role / Device Role / Timing Role: Hard-switched N-channel MOSFET operating at 200 kHz with 240 A peak current and 40 V blocking.

Use Value: 225 nC Qg and 47 nC Qgd allow clean zero-voltage switching transition control, reducing EMI and improving converter efficiency above 96%.

Electric Power Steering (EPS) Motor Phase Leg

On-Board Charger (OBC) Output Stage

Use Scenario: Half-bridge phase leg in 3-phase EPS motor inverters, subjected to high dv/dt and repetitive short-circuit events.

IC Role / Device Role / Timing Role: Low-side switching device with integrated body diode conducting freewheeling current during PWM dead-time.

Use Value: 29–44 ns trr and 68–102 nC Qrr minimize diode reverse recovery losses and prevent shoot-through in 10–20 kHz motor PWM.

Use Scenario: Secondary-side synchronous rectifier in OBC AC/DC front-end, converting 400 V DC to 12 V/24 V auxiliary power.

IC Role / Device Role / Timing Role: High-current, low-VDS(on) rectifying switch replacing Schottky diodes in LLC resonant topology.

Use Value: 175°C TJ rating ensures reliable operation during sustained 200 A conduction under full-load OBC thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 2.2 mΩ RDS(on), TO-263 package, 175°C rating, Qg = 205 nC	Higher RDS(on) increases conduction loss by ~22% at 200 A; surface-mount form factor suits automated assembly but requires larger PCB area.	Select when board-level automation and RoHS-compliant SMT are prioritized over minimal on-resistance.
IXTH300N04S5	40 V, 1.4 mΩ RDS(on), TO-247 package, 175°C rating, Qg = 260 nC	Lower RDS(on) improves efficiency but higher Qg demands stronger gate driver; through-hole TO-247 offers better thermal dissipation than TO-262.	Select when maximum efficiency and heatsink cooling capacity justify larger footprint and higher gate drive power.

Compared with STL220N4F7AG and IXTH300N04S5, AUIRF2804WL provides the optimal balance of ultra-low RDS(on), moderate Qg, and TO-262 mechanical compatibility with legacy automotive power modules-making it ideal for drop-in upgrades in existing ECU and EPS designs.

Availability

AUIRF2804WL is available at Aetrix Electronics and suitable for engine control units, electric power steering systems, and automotive DC-DC converters requiring stable component supply across extended vehicle lifecycles.

Supply support for AUIRF2804WL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap device innovation.

AUIRF2804WL belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-current switching in harsh under-hood environments-including start-stop systems, battery management, and motor actuation.

FAQ

What is the maximum continuous drain current for AUIRF2804WL at 100°C case temperature?

At TC = 100°C, the continuous drain current is 208 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated temperatures, and must be used with appropriate heatsinking to maintain TJ ≤ 175°C.

Is AUIRF2804WL suitable for synchronous rectification in a 48 V automotive DC-DC converter?

Yes-its 1.57 mΩ typical RDS(on) at VGS = 10 V, 175°C junction rating, and fast body diode (trr = 29–44 ns) make it well-suited for high-frequency synchronous rectification in 48 V systems. Gate drive must deliver ≥225 nC with low impedance to ensure full enhancement and minimize switching losses at 200–500 kHz.

Does AUIRF2804WL have integrated ESD protection, and what are its ratings?

AUIRF2804WL is qualified to AEC-Q101 ESD standards: Human Body Model Class H3A (±4000 V), Machine Model Class M4 (±425 V), and Charged Device Model Class C5 (±1000 V). These ratings confirm robustness against assembly-line and field ESD events without requiring external protection networks.

How does the effective output capacitance (Coss eff.) impact hard-switching performance?

Coss eff. = 2115 pF represents the fixed capacitance that replicates actual Coss charging behavior during VDS rise from 0 to 80% V(BR)DSS. In hard-switched converters, this value directly determines turn-off energy loss (½ × Coss eff. × V²), making it critical for calculating total switching loss and selecting optimal gate resistor values.

AUIRF2804WL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Wide Leads

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 240A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 187A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 225 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7978 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262-3 Wide

AUIRF2804WL FAQ

1.How can I place an order for AUIRF2804WL through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIRF2804WL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIRF2804WL reliable?

The price and inventory of AUIRF2804WL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIRF2804WL is usually 5 days.

3.What payment methods are accepted for AUIRF2804WL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIRF2804WL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIRF2804WL?

AUIRF2804WL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIRF2804WL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIRF2804WL?

For technical support, including AUIRF2804WL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIRF2804WL requirements.

6.How does Aetrix verify that AUIRF2804WL is sourced from the original manufacturer or authorized distributors?

All AUIRF2804WL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIRF2804WL meets industry standards.

7.What is the process for return or replacement of AUIRF2804WL?

All AUIRF2804WL units undergo pre-shipment inspection (PSI). If there is an issue with AUIRF2804WL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIRF2804WL part is unused and in its original packaging.

Return procedure for AUIRF2804WL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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