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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRF7467 MOSFET N-CH 30V 11A 8SO Infineon Technologies	7,383	RFQ	Datasheet	HEXFET®	8-SOIC (0.154", 3.90mm Width)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	11A (Ta)	2.8V, 10V	12mOhm @ 11A, 10V	2V @ 250µA	32 nC @ 4.5 V	±12V	2530 pF @ 15 V	-	2.5W (Ta)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	8-SO
IRF1104STRL MOSFET N-CH 40V 100A D2PAK Infineon Technologies	5,334	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	100A (Tc)	10V	9mOhm @ 60A, 10V	4V @ 250µA	93 nC @ 10 V	±20V	2900 pF @ 25 V	-	2.4W (Ta), 170W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF3808LPBF MOSFET N-CH 75V 106A TO262 Infineon Technologies	2,180	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	75 V	106A (Tc)	10V	7mOhm @ 82A, 10V	4V @ 250µA	220 nC @ 10 V	±20V	5310 pF @ 25 V	-	200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IRF6609TR1 MOSFET N-CH 20V 31A DIRECTFET Infineon Technologies	3,954	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MT	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	31A (Ta), 150A (Tc)	4.5V, 10V	2mOhm @ 31A, 10V	2.45V @ 250µA	69 nC @ 4.5 V	±20V	6290 pF @ 10 V	-	1.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MT
IRF6678TR1 MOSFET N-CH 30V 30A DIRECTFET Infineon Technologies	7,072	RFQ	Datasheet	HEXFET®	DirectFET™ Isometric MX	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	30A (Ta), 150A (Tc)	4.5V, 10V	2.2mOhm @ 30A, 10V	2.25V @ 250µA	65 nC @ 4.5 V	±20V	5640 pF @ 15 V	-	2.8W (Ta), 89W (Tc)	-40°C ~ 150°C (TJ)	-	-	Surface Mount	DIRECTFET™ MX
IRFB3006PBFXKMA1 TRENCH 40<-<100V Infineon Technologies	4,292	RFQ	Datasheet	-	TO-220-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	60 V	195A (Tc)	10V	2.5mOhm @ 170A, 10V	4V @ 250µA	300 nC @ 10 V	±20V	8970 pF @ 50 V	-	375W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRL1404LPBF MOSFET N-CH 40V 160A TO262 Infineon Technologies	2,956	RFQ	Datasheet	HEXFET®	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	40 V	160A (Tc)	4.3V, 10V	4mOhm @ 95A, 10V	3V @ 250µA	140 nC @ 5 V	±20V	6600 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-262
IPB06CN10N G MOSFET N-CH 100V 100A D2PAK Infineon Technologies	7,904	RFQ	Datasheet	OptiMOS™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	100 V	100A (Tc)	10V	6.2mOhm @ 100A, 10V	4V @ 180µA	139 nC @ 10 V	±20V	9200 pF @ 50 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	PG-TO263-3
IPP037N08N3GE8181XKSA1 MOSFET N-CH 80V 100A TO220-3 Infineon Technologies	4,653	RFQ	Datasheet	OptiMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	80 V	100A (Tc)	6V, 10V	3.75mOhm @ 100A, 10V	3.5V @ 155µA	117 nC @ 10 V	±20V	8110 pF @ 40 V	-	214W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	PG-TO220-3
IRFS5620TRLPBF MOSFET N-CH 200V 24A D2PAK Infineon Technologies	4,325	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	200 V	24A (Tc)	10V	77.5mOhm @ 15A, 10V	5V @ 100µA	38 nC @ 10 V	±20V	1710 pF @ 50 V	-	144W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK

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