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Infineon Technologies IRF6678TR1
- Part No.:
- IRF6678TR1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MX
- Datasheet:
-
IRF6678TR1.pdf
- Description:
- MOSFET N-CH 30V 30A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:7,072
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Product details
Overview
IRF6678TR1 from Infineon Technologies (formerly International Rectifier) is a 30 V, 1.7 mΩ @ 10 V, N-channel DirectFET™ power MOSFET optimized for synchronous buck converters in CPU core DC-DC applications. It delivers ultra-low RDS(on), 43 nC total gate charge, and 1.4 °C/W junction-to-case thermal resistance in a low-profile (0.7 mm) MX-outline copper-can package with dual-sided cooling capability.
For engineers reviewing the IRF6678TR1 datasheet, IRF6678TR1 pinout, IRF6678TR1 application, or IRF6678TR1 equivalent, key selection criteria include its 2.3 mΩ RDS(on) at 4.5 V gate drive, 46 nC reverse recovery charge, 1260 pF output capacitance, and compatibility with standard SO-8 PCB footprints while enabling high-frequency switching up to 1 MHz in 12 V input bus converters.
Technical Context
The IRF6678TR1 uses trench-gate HEXFET® silicon in a copper substrate DirectFET™ MX package, enabling symmetric top-and-bottom thermal paths and eliminating bond wires to reduce package inductance to <1 nH. Its gate threshold voltage of 1.8 V (typ.) and negative temperature coefficient of –6.3 mV/°C support stable operation across –40°C to +150°C junction temperatures.
Designed specifically for the SyncFET position in multiphase synchronous buck regulators, it balances conduction loss (via 1.7 mΩ RDS(on)) and switching loss (via 15 nC Qgd, 19 nC Qsw, and 570 pF Crss), achieving >95% efficiency in 12 V → 1.0 V/150 A VRM designs operating at 500 kHz–1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 12 V bus systems with margin for transient overshoot. |
| RDS(on) @ 10 V | 1.7 mΩ - Enables ≤1.5 W conduction loss at 30 A continuous drain current in SyncFET role. |
| Qg total | 43 nC - Low gate drive energy requirement supports efficient 1 MHz PWM control with standard gate drivers. |
| Qrr | 46 nC - Minimizes body diode recovery loss during dead-time in synchronous rectification. |
| RθJC | 1.4 °C/W - Enables direct heatsink mounting to drain-side copper for thermal management under 210 W power dissipation. |
| Coss | 1260 pF - Reduces capacitive switching loss and improves light-load efficiency in hard-switched topologies. |
| ID @ TC = 25°C | 240 A - Peak current capability supports high-current multiphase CPU VRMs without derating. |
Pinout & Package
IRF6678TR1 uses the DirectFET™ MX outline: a copper-can, double-sided cooling package with no leads, measuring 6.3 × 5.0 × 0.7 mm (L × W × H). The drain connects to the top metal can and bottom substrate; source and gate are soldered to PCB pads on the bottom side only. No external pins - terminals are defined by PCB footprint pads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Can / Bottom Substrate | Drain (D) | Electrically common copper structure serving as primary heat path and high-current drain node. |
| Source Pad (S) | Source (S) | Bottom-side PCB pad; carries full load current back to input capacitor and enables Kelvin source sensing. |
| Gate Pad (G) | Gate (G) | Isolated bottom-side PCB pad; requires controlled impedance routing to minimize ringing during 10 V gate drive transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling | Enables simultaneous thermal interface to top heatsink and bottom PCB copper, reducing RθJA by 80% vs. SO-8 packages. |
| Ultra-low package inductance | <1 nH - Eliminates bond wires and minimizes voltage spikes during 100 A/µs dI/dt switching in VRMs. |
| Optimized for SyncFET socket | 1.7 mΩ RDS(on) @ 10 V and 2.3 mΩ @ 4.5 V match gate drive characteristics of modern controller ICs driving both high- and low-side FETs. |
| Low Qgd/Qg ratio | 15 nC / 43 nC = 0.35 - Improves Miller immunity and enables faster turn-off with reduced shoot-through risk. |
| Body diode trr | 43 ns (typ.) - Supports clean zero-voltage switching (ZVS) transition in resonant and hybrid topologies. |
Applications
| CPU Core Voltage Regulator (VRM) | GPU Power Delivery Module |
|---|---|
|
Use Scenario: Multiphase synchronous buck converter supplying 0.8–1.3 V @ up to 200 A to Intel/AMD desktop/server CPUs. IC Role / Device Role: Low-side (SyncFET) switch handling high RMS current and fast transient loads. Use Value: 1.7 mΩ RDS(on) and 1.4 °C/W RθJC enable >95% peak efficiency and <70°C case temperature at full load. |
Use Scenario: Compact 4–6 phase VRM on GPU reference board powering discrete graphics processors with dynamic voltage/frequency scaling. IC Role / Device Role: High-current, high-frequency switching element in compact layout with strict thermal envelope. Use Value: 0.7 mm profile allows stacking with inductors; dual-sided cooling supports 150 A per phase in 12 mm² footprint. |
| Server Memory Channel Regulator | AI Accelerator Board Power Stage |
|
Use Scenario: Point-of-load (POL) regulator delivering 1.2 V @ 60 A to DDR5 memory modules with tight ripple and transient response specs. IC Role / Device Role: Primary power switch in 300 kHz–1 MHz fixed-frequency buck stage with ceramic output capacitors. Use Value: 46 nC Qrr and 43 ns trr minimize body diode conduction loss during dead-time, improving light-load efficiency. |
Use Scenario: High-density power delivery for FPGA-based AI inference accelerators requiring rapid current slew rates (>500 A/µs). IC Role / Device Role: Low-inductance, low-RDS(on) switch enabling clean switching waveforms and minimal EMI generation. Use Value: Sub-1 nH package inductance prevents voltage overshoot during 100+ A transients, preserving signal integrity on adjacent high-speed lanes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IRF6662TR1PBF | Higher RDS(on) (2.3 mΩ @ 10 V), same MX package, 50 nC Qg | Lower efficiency at high current; suitable for cost-sensitive 50–100 A VRMs where thermal margin exists | Select when lower gate drive strength is acceptable and 0.6 mΩ higher conduction loss is tolerable. |
| Vishay SiR626DP | Same 30 V rating, 1.8 mΩ @ 10 V, but PowerPAK® SO-8 package (RθJC = 2.5 °C/W, no dual-sided cooling) | Limited to single-sided cooling; requires larger PCB copper area or heatsink for equivalent thermal performance | Choose only if existing SO-8 layout reuse is mandatory and thermal headroom exceeds 15°C at full load. |
Compared with IRF6678TR1, IRF6662TR1PBF trades 0.6 mΩ higher RDS(on) for lower gate charge sensitivity, while SiR626DP sacrifices thermal performance for footprint compatibility-neither matches the IRF6678TR1's combination of 1.7 mΩ, 1.4 °C/W, and dual-sided cooling in a 0.7 mm profile.
Availability
IRF6678TR1 is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power modules, and AI accelerator board power stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and enterprise applications.
Supply support for IRF6678TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.
The IRF6678TR1 belongs to Infineon's DirectFET™ power MOSFET product line, engineered to replace SO-8 and DPAK packages in high-efficiency, high-power-density DC-DC conversion where thermal and switching performance are critical.
FAQ
What is the maximum continuous drain current for IRF6678TR1 at 70°C ambient?
The IRF6678TR1 supports 150 A continuous drain current at TA = 70°C when mounted on a 1 in² copper board per datasheet Figure 12. This rating assumes proper PCB copper area, thermal vias, and airflow; actual current must be validated against measured case temperature and RDS(on) derating at elevated junction temperatures.
Does IRF6678TR1 require special PCB layout considerations beyond standard SO-8 footprints?
Yes - although its MX outline fits SO-8 land patterns, the IRF6678TR1 requires dedicated thermal vias under the source pad, minimum 1 oz copper on inner layers, and symmetric top/bottom copper pour for dual-sided cooling. Application note AN-1035 mandates specific stencil aperture design (0.12 mm thickness, 90% area ratio) for reliable solder joint formation on the copper can.
Can IRF6678TR1 be used in avalanche-rated applications?
No - the IRF6678TR1 is not rated for repetitive avalanche operation. Its EAS rating is 400 mJ (single-pulse, 23 A, 24 V) per datasheet Figure 14, but the device lacks guaranteed avalanche ruggedness. It must be operated within SOA limits with appropriate snubbing or clamping for inductive switching stress.
What is the recommended gate resistor value for 1 MHz switching in a synchronous buck converter?
A 2.2 Ω gate resistor is recommended for 1 MHz operation, balancing switching speed (tdoff ≈ 27 ns, tf ≈ 8.1 ns) and gate driver stability. Lower values (<1.5 Ω) increase dV/dt stress and EMI; higher values (>4.7 Ω) degrade efficiency due to extended Qgd-dominated turn-off delay and increased switching loss.
IRF6678TR1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MX
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta), 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.2mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 65 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5640 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MX
IRF6678TR1 FAQ
1.How can I place an order for IRF6678TR1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6678TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6678TR1 reliable?
The price and inventory of IRF6678TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6678TR1 is usually 5 days.
3.What payment methods are accepted for IRF6678TR1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6678TR1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6678TR1?
IRF6678TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6678TR1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6678TR1?
For technical support, including IRF6678TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6678TR1 requirements.
6.How does Aetrix verify that IRF6678TR1 is sourced from the original manufacturer or authorized distributors?
All IRF6678TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6678TR1 meets industry standards.
7.What is the process for return or replacement of IRF6678TR1?
All IRF6678TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6678TR1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6678TR1 part is unused and in its original packaging.
Return procedure for IRF6678TR1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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